Patent application number | Description | Published |
20130028005 | RESISTIVE MEMORY ARRAY AND METHOD FOR CONTROLLING OPERATIONS OF THE SAME - A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance. A resistive memory array including an array of the above resistive memory units, word lines and bit lines is also described, wherein the word (bit) lines are coupled to the first (second) memory layers. | 01-31-2013 |
20130086294 | Serial Peripheral Interface and Method for Data Transmission - A serial peripheral interface of an integrated circuit including multiple pins and a clock pin is provided. The pins are coupled to the integrated circuit for transmitting an instruction, an address or a read out data. The clock pin is coupled to the integrated circuit for inputting multiple timing pulses. The plurality of pins transmit the instruction, the address or the read out data at rising edges, falling edges or both edges of the timing pulses. | 04-04-2013 |
20130086350 | METHOD AND SYSTEM FOR ENHANCED PERFORMANCE IN SERIAL PERIPHERAL INTERFACE - A method of conducting an operation in an integrated circuit having a plurality of memory cells includes receiving an operating command for the memory cells and receiving a first address segment associated with the memory cells in at least one clock cycle after receiving the operating command. The method further includes receiving a first performance enhancement indicator in at least one clock cycle after ending the first address segment while before starting to transfer data, for determining whether an enhanced operation is to be performed. | 04-04-2013 |
20130089960 | MANUFACTURING METHOD FOR HIGH VOLTAGE TRANSISTOR - A manufacturing method for a high voltage transistor includes the following steps. A substrate is provided. A P-type epitaxial (P-epi) layer is provided above the substrate. An N-well is formed in the P-epi layer. A P-well is formed in the P-epi layer. Field oxide (FOX) layers are formed above the P-epi layer. A gate oxide (GOX) layer is formed between the FOX layers. P-type implants are doped into the P-well or N-type implants are doped into the N-well to adjust an electrical function of the high voltage transistor. | 04-11-2013 |
20130100743 | METHOD FOR OPERATING A SEMICONDUCTOR STRUCTURE - A method for operating a semiconductor structure is provided. The semiconductor structure includes a first conductor extending in a first direction, a second conductor extending in a second direction different from the first direction, and a dielectric layer between the first conductor and the second conductor. The method for operating the semiconductor structure comprises following steps. A current is provided to flow in the first direction in the first conductor. | 04-25-2013 |
20130127436 | APPARATUS OF SUPPLYING POWER AND METHOD THEREFOR - A power supply apparatus and a method for supplying power are provided. The method includes: providing a first power supply for outputting a first power signal; providing a second first power supply for outputting a second power signal; and selectively charging the second power supply by using the first power supply. | 05-23-2013 |
20130135028 | HIGH VOLTAGE SUSTAINABLE OUTPUT BUFFER - An output buffer includes a first output transistor, a first switch, a second switch and a third switch. The first output transistor is connected to a first operational voltage for outputting the first operational voltage as the data signal. The first switch is connected to a bulk of the first output transistor for receiving an enable signal. The second switch is connected to the first switch and a second operational voltage for receiving the enable signal, wherein the second operational voltage is lower than the first operational voltage. The third switch includes a first terminal connected to the bulk of the first output transistor, a control terminal connected to the first switch, and a second terminal connected to the first operational voltage. | 05-30-2013 |
20130145201 | AUTOMATIC INTERNAL TRIMMING CALIBRATION METHOD TO COMPENSATE PROCESS VARIATION - A method is described for performing an automatic internal trimming operation that can compensate process variation and supply voltage variation in an integrated circuit. A reference signal is applied when the integrated circuit is in an automatic internal trimming mode, and integrated circuit timing is trimmed into a predetermined target range after applying predefined reference cycles. | 06-06-2013 |
20130161835 | MULTILAYER CONNECTION STRUCTURE - A three-dimensional stacked IC device includes a stack of at least first, second, third and fourth contact levels at an interconnect region. Each contact level has a conductive layer and an insulation layer. First, second, third and fourth electrical conductors pass through portions of the stack of contact levels. The first, second, third and fourth electrical conductors are in electrical contact with the first, second, third and fourth conductive layers, respectively. A dielectric sidewall spacer circumferentially surrounds the second, third and fourth electrical conductors so that the second, third and fourth electrical conductors only electrically contact the respective second, third and fourth conductive layers. | 06-27-2013 |
20130194866 | ACCESSING METHOD AND A MEMORY USING THEREOF - A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell current corresponding to the first and the second bits respectively with a voltage applying on the memory cell. The control unit determines a digital state of the first bit by comparing a first reference current with the first cell current or by comparing a reference data with a first delta current between the first cell current and the second cell current. | 08-01-2013 |