Patent application number | Description | Published |
20110083113 | System and Method for Lithography Simulation - There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks. | 04-07-2011 |
20110230999 | Fast Freeform Source and Mask Co-Optimization Method - The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques. | 09-22-2011 |
20120017183 | System and Method for Creating a Focus-Exposure Model of a Lithography Process - A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window. | 01-19-2012 |
20120075605 | Source Polarization Optimization - A lithographic simulation process is described, where each source point in a preselected group of source points at a pupil plane of an illumination source is represented by one or more variable parameters, wherein at least some of the variable parameters characterize a polarization state at the source point. One or both of the preselected group of source points in the illumination source and a representation of the design layout are iteratively reconfigured based on a computed gradient of a cost function with respect to the one or more variable parameters until a desired lithographic response is obtained, wherein the cost function comprises an aerial image intensity of a representation of the design layout projected using the preselected group of source points. Physical hardware to implement the source polarization variation is also described. | 03-29-2012 |
20120113404 | Optimization Flows of Source, Mask and Projection Optics - Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. | 05-10-2012 |
20120216156 | Method of Pattern Selection for Source and Mask Optimization - The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns. | 08-23-2012 |
20120254813 | Integration of Lithography Apparatus and Mask Optimization Process with Multiple Patterning Process - The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow. | 10-04-2012 |
20130041750 | METHOD OF ATTENTION-TARGETING FOR ONLINE ADVERTISEMENT - The various embodiments described in the present disclosure, in at least one aspect, relate to computer-implemented methods of online advertisement. In one embodiment, a method includes determining an attention score for each of a plurality of ad creatives corresponding to a common ad content based on at least a correlation between each ad creative and a user's subconscious interest. The method further includes selecting an ad creative among the plurality of ad creatives based at least in part on the attention scores, and presenting the ad content with the selected ad creative as an ad impression to the user. | 02-14-2013 |
20130066716 | SENTIMENT-TARGETING FOR ONLINE ADVERTISEMENT - The various embodiments described in the present disclosure, in at least one aspect, relate to computer-implemented methods of online advertisement. In one embodiment, a method includes, in response to receiving a request for an ad to be provided to a user in an online session, identifying a plurality of ads as candidates for consideration, determining one or more sentiments of a content of the online session, and ranking the plurality of identified ads based at least in part on (i) a correlation between the content of the online session and a content of each identified ad, and (ii) a correlation between the one or more sentiments of the content of the online session and the content of each identified ad. | 03-14-2013 |
20130139118 | THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHYSIMULATION - A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image. | 05-30-2013 |
20130185681 | CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM - A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields. | 07-18-2013 |
20130251237 | HARMONIC RESIST MODEL FOR USE IN A LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD - A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist. | 09-26-2013 |
20140012671 | CONTENT-BASED TARGETED ONLINE ADVERTISEMENT - A method of providing targeted online advertisement includes receiving a request for an ad impression to be provided to a user in a network environment. The request includes a first content and a second content. The method also includes, using a processor, determining a context of the first content and a context of the second content, determining a correlation between the context of the first content and the context of the second content, and identifying a plurality of ads as candidates for consideration. The method further includes, using the processor, ranking the plurality of identified ads, selecting an ad among the plurality of identified ads based at least in part on a result of the ranking, and providing the selected ad as the ad impression to be displayed to the user in response to receiving the request. | 01-09-2014 |
20140012672 | CONTENT-BASED BIDDING IN ONLINE ADVERTISING - A method of providing targeted online advertisement includes receiving a request for an ad impression. The request includes a first content and a second content. The method also includes determining information related to (i) a context of the first content, (ii) a context of the second content, and (iii) a correlation between the context of the first content and the context of the second content, and providing the determined information to a bidding service, thereby enabling one or more advertisers to place one or more bids on the ad impression based on the provided information. Each of the one or more bids includes a bid price. The method further includes receiving the one or more bids for the ad impression, selecting one of the one or more received bids based at least in part on the bid prices, and providing an ad impression associated with the selected bid. | 01-09-2014 |
20140068530 | FAST FREEFORM SOURCE AND MASK CO-OPTIMIZATION METHOD - The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques. | 03-06-2014 |
20140195993 | THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION - A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image. | 07-10-2014 |
20140198972 | HARMONIC RESIST MODEL FOR USE IN A LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD - A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist. | 07-17-2014 |
20140365983 | INTEGRATION OF LITHOGRAPHY APPARATUS AND MASK OPTIMIZATION PROCESS WITH MULTIPLE PATTERNING PROCESS - The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow. | 12-11-2014 |
20150058815 | CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM - A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. | 02-26-2015 |