Patent application number | Description | Published |
20110151592 | METHODS FOR MONITORING THE AMOUNT OF CONTAMINATION IMPARTED INTO SEMICONDUCTOR WAFERS DURING WAFER PROCESSING - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 06-23-2011 |
20110204471 | SEMICONDUCTOR WAFERS WITH REDUCED ROLL-OFF AND BONDED AND UNBONDED SOI STRUCTURES PRODUCED FROM SAME - The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided. | 08-25-2011 |
20110207246 | METHODS FOR REDUCING THE WIDTH OF THE UNBONDED REGION IN SOI STRUCTURES - The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided. | 08-25-2011 |
20110212547 | METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IMPARTED INTO WAFERS DURING A SEMICONDUCTOR PROCESS - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 09-01-2011 |
20110212550 | METHODS FOR DETECTING METAL PRECIPITATES IN A SEMICONDUCTOR WAFER - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 09-01-2011 |
20120115258 | METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IN A PROCESS - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 05-10-2012 |
20120235283 | SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN THE HANDLE WAFER - Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps. | 09-20-2012 |
20120238070 | METHODS FOR PRODUCING SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN THE HANDLE WAFER - Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps. | 09-20-2012 |
20140327112 | METHOD TO DELINEATE CRYSTAL RELATED DEFECTS - Process for detecting grown-in-defects in a semiconductor silicon substrate. The process includes contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration sufficient to grow grown-in -defects disposed in the semiconductor silicon substrate to a size capable of being detected by an optical detection device. | 11-06-2014 |