Liangcai

Liangcai Li, Shanghai CN

Patent application number	Description	Published
20150026483	Systems and Methods for Mobile Application Protection - Systems and methods are provided for mobile application protection. An executable code associated with an application is received. An encrypted code and a wrapper code are generated based at least in part on the executable code. The encrypted code is capable of being decrypted based at least in part on the wrapper code. An application package including the encrypted code and the wrapper code is generated for a mobile device.	01-22-2015

Liangcai Lin, Wuhan CN

Patent application number	Description	Published
20150353102	Two-Level Locking Device, Hopper Car Bottom Door and Hopper Car - The present invention discloses a two-level locking device, a hopper car bottom door and a hopper car. The device includes a first transmission shaft, a second transmission shaft, a clutch, a pressure mechanism and a reset mechanism, wherein under the pressure action of the pressure mechanism, the clutch separates the first transmission shaft from the second transmission shaft, and under the action of the reset mechanism, the clutch joints the first transmission shaft with the second transmission shaft. The bottom door includes the device. The hopper car includes the bottom door. By adopting the device, when the clutch is accidently separated by the pressure action of the pressure mechanism, the reset mechanism can re-joint the clutch to prevent the accidental rotation of the first transmission shaft and the second transmission shaft. By adopting the bottom door, the hopper car bottom door opened and closed by a planar four-bar linkage passing a dead point is more reliable to use. The hopper car is more reliable to use.	12-10-2015

Liangcai Wu, Shanghai CN

Patent application number	Description	Published
20130175493	PHASE CHANGE MEMORY STRUCTURE HAVING LOW-K DIELECTRIC HEAT-INSULATING MATERIAL AND FABRICATION METHOD THEREOF - The present invention discloses a phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof, wherein the phase change memory cell comprises diode, heating electrode, reversible phase change resistor, top electrode and etc; the heating electrode and reversible phase change resistor are surrounded by low-k dielectric heat-insulating layer; an anti-diffusion dielectric layer is designed between the reversible phase change resistor and the low-k dielectric heat-insulating layer surrounding thereof. The present invention utilizes low-k dielectric material as heat-insulating material, thereby avoiding thermal crosstalk and mutual influence during operation between phase change memory cells, enhancing the reliability of devices, and eliminating the influence of temperature, pressure and etc. on phase change random access memory (PCRAM) data retention during the change from amorphous to polycrystalline states. Furthermore, an anti-diffusion dielectric layer is prepared between the low-k dielectric material and the phase change material, which can be used to prevent the elements of the phase change material from diffusing to low-k dielectric material. The fabrication process of said phase change memory is compatible with standard complementary metal-oxide semiconductor (CMOS) process and the chemical mechanical polishing (CMP) process with low pressure and light corrosion is adopted in polishing.	07-11-2013
20130334469	AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FABRICATION METHOD THEREOF - The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al	12-19-2013
20140192592	SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIAL - The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula Sb	07-10-2014

Liangcai Wu, Shangcai CN

Patent application number	Description	Published
20150207070	Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof - The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being A	07-23-2015