Patent application number | Description | Published |
20120254252 | INPUT/OUTPUT EFFICIENCY FOR ONLINE ANALYSIS PROCESSING IN A RELATIONAL DATABASE - Embodiments of the invention relate to improved input/output efficiency for online analysis processing in a relational database. An aspect of the invention includes selecting a table from a relational database. The table is split by column into sub-tables, with at least one of the sub-tables including at least two columns. Each sub-table is written into a corresponding table of a row-based storage database. | 10-04-2012 |
20140174343 | METHOD FOR MAKING TOPOLOGICAL INSULATOR STRUCTURE - A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi. | 06-26-2014 |
20140175373 | TOPOLOGICAL INSULATOR STRUCTURE - A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr | 06-26-2014 |
20140175382 | ELECTRICAL DEVICE - An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cr | 06-26-2014 |
20140178674 | TOPOLOGICAL INSULATOR STRUCTURE - A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr | 06-26-2014 |
20140179026 | METHOD FOR GENERATING QUANTIZED ANOMALOUS HALL EFFECT - A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×10 | 06-26-2014 |
20150380129 | HIGH-TEMPERATURE SUPERCONDUCTING FILM - A high-temperature superconducting film includes a SrTiO | 12-31-2015 |
20150380130 | METHOD FOR MAKING HIGH-TEMPERATURE SUPERCONDUCTING FILM - A method for making a high-temperature superconducting film includes loading a SrTiO | 12-31-2015 |