Patent application number | Description | Published |
20090023248 | METHOD OF PACKAGING A SEMICONDUCTOR DIE - A method of packaging a semiconductor die includes the steps of providing a flange ( | 01-22-2009 |
20110163439 | DIE BONDING A SEMICONDUCTOR DEVICE - A method includes providing a silicon-containing die and providing a heat sink having a palladium layer over a first surface of the heat sink. A first gold layer is located over one of a first surface of the die or the palladium layer. The silicon-containing die is bonded to the heat sink, where bonding includes joining the silicon-containing die and the heat sink such that the first gold layer and the palladium layer are between the first surface of the silicon-containing die and the first surface of the heat sink, and heating the first gold layer and the palladium layer to form a die attach layer between the first surface of the silicon-containing die and the first surface of the heat sink, the die attach layer comprising a gold interface layer having a plurality of intermetallic precipitates, each of the plurality of intermetallic precipitates comprising palladium, gold, and silicon. | 07-07-2011 |
20110180808 | METHOD OF MAKING A MOUNTED GALLIUM NITRIDE DEVICE - A method of making a mounted gallium nitride (GaN) device includes obtaining a device structure comprising a silicon layer, a silicon carbide (SiC) layer over the silicon layer, and a GaN layer over the SiC layer. The GaN layer is processed to form an active layer of active devices and interconnect over the GaN layer. After the step of processing the GaN layer, a gold layer is formed on the silicon layer. The device structure is attached to a heat sink structure using the gold layer. The mounted GaN device includes the SiC layer over the polysilicon layer and the GaN layer over the SiC layer. The active layer is over the GaN layer. | 07-28-2011 |
20130154068 | PACKAGED LEADLESS SEMICONDUCTOR DEVICE - A packaged leadless semiconductor device ( | 06-20-2013 |
20130320515 | SYSTEM, METHOD AND APPARATUS FOR LEADLESS SURFACE MOUNTED SEMICONDUCTOR PACKAGE - A packaged semiconductor device may include a termination surface having terminations configured as leadless interconnects to be surface mounted to a printed circuit board. A first flange has a first surface and a second surface. The first surface provides a first one of the terminations, and the second surface is opposite to the first surface. A second flange also has a first surface and a second surface, with the first surface providing a second one of the terminations, and the second surface is opposite to the first surface. A die is mounted to the second surface of the first flange with a material having a melting point in excess of 240° C. An electrical interconnect extends between the die and the second surface of the second flange opposite the termination surface, such that the electrical interconnect, first flange and second flange are substantially housed within a body. | 12-05-2013 |
20140022020 | SEMICONDUCTOR PACKAGE DESIGN PROVIDING REDUCED ELECTROMAGNETIC COUPLING BETWEEN CIRCUIT COMPONENTS - A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier. | 01-23-2014 |
20140070365 | SEMICONDUCTOR DEVICES WITH IMPEDANCE MATCHING-CIRCUITS, AND METHODS OF MANUFACTURE THEREOF - Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices. | 03-13-2014 |
20140070397 | HIGH POWER SEMICONDUCTOR PACKAGE SUBSYSTEMS - A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect. | 03-13-2014 |
20140084432 | METHOD AND APPARATUS FOR MULTI-CHIP STRUCTURE SEMICONDUCTOR PACKAGE - A packaged semiconductor device may include a leadframe and a die carrier mounted to the leadframe. The die carrier is formed from an electrically and thermally conductive material. A die is mounted to a surface of the die carrier with die attach material having a melting point in excess of 240° C. A first electrical interconnect couples the die and the leadframe. A housing covers portions of the leadframe, die carrier, die and first electrical interconnect. | 03-27-2014 |
20140252586 | SEMICONDUCTOR DEVICES THAT INCLUDE A DIE BONDED TO A SUBSTRATE WITH A GOLD INTERFACE LAYER - Embodiments of a semiconductor device include a primary portion of a substrate, a die, and a die attach layer between the die and the primary portion of the substrate. The die attach layer includes a gold interface layer that includes gold and a plurality of first precipitates in the gold. Each of the first precipitates includes a combination of nickel, cobalt, palladium, gold, and silicon. | 09-11-2014 |
20140256091 | METHODS FOR BONDING A DIE AND A SUBSTRATE - Embodiments of methods for forming a semiconductor device that includes a die and a substrate include pressing together the die and the substrate such that a first gold layer and one or more additional material layers are between the die and the substrate, and performing a bonding operation to form a die attach layer between the die and the substrate. The die attach layer includes a gold interface layer that includes gold and a plurality of first precipitates in the gold. Each of the first precipitates includes a combination of nickel, cobalt, palladium, gold, and silicon. | 09-11-2014 |
20140332941 | SYSTEM, METHOD AND APPARATUS FOR LEADLESS SURFACE MOUNTED SEMICONDUCTOR PACKAGE - A packaged semiconductor device may include a termination surface having terminations configured as leadless interconnects to be surface mounted to a printed circuit board. A first flange has a first surface and a second surface. The first surface provides a first one of the terminations, and the second surface is opposite to the first surface. A second flange also has a first surface and a second surface, with the first surface providing a second one of the terminations, and the second surface is opposite to the first surface. A die is mounted to the second surface of the first flange with a material having a melting point in excess of 240° C. An electrical interconnect extends between the die and the second surface of the second flange opposite the termination surface, such that the electrical interconnect, first flange and second flange are substantially housed within a body. | 11-13-2014 |
20150055310 | SOLDER WETTABLE FLANGES AND DEVICES AND SYSTEMS INCORPORATING SOLDER WETTABLE FLANGES - An embodiment of a solder wettable flange includes a flange body formed from a conductive material. The flange body has a bottom surface, a top surface, sidewalls extending between the top surface and the bottom surface, and one or more depressions extending into the flange body from the bottom surface. Each depression is defined by a depression surface that may or may not be solder wettable. During solder attachment of the flange to a substrate, the depressions may function as reservoirs for excess solder. Embodiments also include devices and systems that include such solder wettable flanges, and methods for forming the solder wettable flanges, devices, and systems. | 02-26-2015 |