Patent application number | Description | Published |
20080214020 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE SUBJECTED TO HEAT TREATMENT BY USE OF OPTICAL HEATING APPARATUS - An auxiliary heating process is performed to set the temperature of the outer peripheral portion of a semiconductor substrate higher than that of the central portion thereof by use of an auxiliary heating source which supplementally heats a region of an area smaller than the area of the main surface of the semiconductor substrate from the rear surface of the main surface thereof, pulse-like flash lamp light or laser light is applied in the auxiliary heated state and the heat treatment is performed by use of the applied energy. The flash lamp light is applied to the main surface of the semiconductor substrate in a pulse form of 0.1 ms to 100 ms. | 09-04-2008 |
20080224252 | Semiconductor device having an element isolating insulating film - In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure. | 09-18-2008 |
20080293225 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device including a first conductive type impurity region formed by introducing a first conductive type impurities in a first region of a semiconductor region and heating the first region, a second conductive type impurity region formed by introducing a second conductive type impurities in a second region of the semiconductor region and heating the second region, the method including covering the second region with a mask and then introducing the first conductive type impurities in a surface of the first region, removing the mask by a process using gas including oxygen while forming an oxide film on the surface of the first region by the processing using the gas including the oxygen, and introducing the second conductive type impurities in a surface of the second region by using the oxide film as a mask. | 11-27-2008 |
20090023276 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming an impurity diffusion layer in a surface of a semiconductor substrate, wherein the forming the impurity diffusion layer comprises irradiating material including M | 01-22-2009 |
20090139449 | Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same - Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate. | 06-04-2009 |
20090203181 | Semiconductor device manufacturing method, wiring and semiconductor device - In an embodiment of the present invention, a semiconductor layer having regions into which a p-type impurity, an n-type impurity and a (p+n) impurity are respectively introduced is formed as a surface layer by being heat-treated. An impurity segregation layer on these regions is removed, and a film of a metallic material is thereafter formed on the regions and is heat-treated, thereby forming a silicide film on the semiconductor layer. In another embodiment, an impurity is introduced into the impurity segregation layer, and a film of a metallic material is thereafter formed on the impurity segregation layer and is heat-treated to form a silicide film. | 08-13-2009 |
20090206379 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which can prevent the degradation of contact yield even when subjected to a high-temperature and long-time thermal process, and a manufacturing method thereof are provided. The semiconductor device includes: a first semiconductor circuit formed on a semiconductor substrate; a second semiconductor circuit formed above the first semiconductor circuit; an interlayer insulating film formed between the first semiconductor circuit and the second semiconductor circuit; and a contact plug formed in a state of penetrating the interlayer insulating film, the contact plug including a contact plug body made up of a conductor, and a contact plug coating which is insulating and which covers at least a portion of a side face of the contact plug body in contact with the interlayer insulating film. | 08-20-2009 |
20100055859 | Semiconductor device and method of manufacturing the same - Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm. | 03-04-2010 |
20100193874 | SEMICONDUCTOR DEVICE WITH EXTENSION STRUCTURE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film. | 08-05-2010 |
20110248361 | SEMICONDUCTOR DEVICE WITH EXTENSION STRUCTURE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film. | 10-13-2011 |
20110294291 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less. | 12-01-2011 |
20120009799 | TEMPLATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TEMPLATE - According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template. | 01-12-2012 |
20120164811 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, WIRING AND SEMICONDUCTOR DEVICE - In an embodiment of the present invention, a semiconductor layer having regions into which a p-type impurity, an n-type impurity and a (p+n) impurity are respectively introduced is formed as a surface layer by being heat-treated. An impurity segregation layer on these regions is removed, and a film of a metallic material is thereafter formed on the regions and is heat-treated, thereby forming a silicide film on the semiconductor layer. In another embodiment, an impurity is introduced into the impurity segregation layer, and a film of a metallic material is thereafter formed on the impurity segregation layer and is heat-treated to form a silicide film. | 06-28-2012 |
20120244639 | METHOD OF MANUFACTURING MAGNETIC MEMORY - According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning. | 09-27-2012 |
20120244640 | METHOD OF MANUFACTURING MULTILAYER FILM - According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer. | 09-27-2012 |
20120287709 | NON VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - In accordance with an embodiment, a non volatile semiconductor memory device includes a substrate, a first electrode, a functional film, and a second electrode. The first electrode is provided on the substrate. The functional film is located on the first electrode and serves as a storage medium. The second electrode is provided on the functional film or in the functional film, and has a convex curved upper surface. | 11-15-2012 |
20130005148 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer. | 01-03-2013 |
20130069195 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate. | 03-21-2013 |
20130078788 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND PRODUCTION DEVICE USED THEREFOR - According to one embodiment, a producing method for a semiconductor device comprises: heating a semiconductor substrate to thereby maintain a substrate temperature of the semiconductor substrate at a desired temperature and simultaneously dope the semiconductor substrate with conductive impurities; and performing an activation treatment for activating the conductive impurities for doping. | 03-28-2013 |
20130095656 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less. | 04-18-2013 |
20130267083 | PRODUCING METHOD FOR SEMICONDUCTOR DEVICE - According to one embodiment, a producing method for a semiconductor device includes first impurities containing phosphorus or boron in the form of molecular ion and second impurities containing carbon, fluorine or nitrogen with less implantation amount than this phosphorus or boron in the form of molecular ion are implanted into a semiconductor layer to form an impurity implantation layer. | 10-10-2013 |
20140284540 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - According to one embodiment, a semiconductor device comprises a first electrode; a second electrode containing a metal element; and a variable resistance element formed between the first electrode and the second electrode. The variable resistance element comprises an insulating first film disposed on a side of the first electrode and containing oxygen; and a second film disposed on the side of the second electrode and containing an element having a diffusion coefficient larger than the diffusion coefficient of the metal element in the first film and an electronegativity higher than the electronegativity of the metal element. | 09-25-2014 |