Patent application number | Description | Published |
20110198112 | PRINTED CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a method for manufacturing a printed circuit board, including: (A) preparing an aluminum substrate; (B) patterning and etching an etching resist on the aluminum substrate; (C) forming an insulating layer by performing an anodizing treatment on the patterned aluminum substrate; and (D) forming a metal wiring layer by removing the etching resist. The aluminum wiring and the insulating layer are simultaneously formed on the surface of the aluminum patterned by etching through an anodizing method, thereby simplifying the manufacturing process of the substrate and improving adhesion between the metal wiring layer and the insulating layer. In addition, the thickness of the insulating layer and the thickness of the metal wiring layer can be controlled by controlling the anodizing treatment time, thereby providing a method for manufacturing a printed circuit board that can be manufactured to fit for use purpose. | 08-18-2011 |
20110284382 | PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a printed circuit board, including: a metal substrate; an anodic oxide layer formed by anodizing the metal substrate; circuit layers formed on the anodic oxide layer; and a first sol-gel layer formed by applying a photocatalytic material between circuit wirings of the circuit layers and then curing the applied photocatalytic material. The printed circuit board is advantageous in that it can be realized into a high-voltage package printed circuit board because a sol-gel layer is formed between circuit wirings of circuit layers. | 11-24-2011 |
20110303437 | HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; and a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by the heat generated from the heat generating element. | 12-15-2011 |
20110303440 | HYBRID HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a hybrid heat-radiating substrate including a metal core layer; an oxide insulating core layer that is formed in a thickness direction of the metal core layer to have a shape where the oxide insulating core layer is integrally formed with the metal core layer, an oxide insulating layer that is formed on one surface or both surfaces of the metal core layer, and a circuit layer that is configured to include first circuit patterns formed on the oxide insulating core layer and second circuit patterns formed on the oxide insulating layer, and a method of manufacturing the same. | 12-15-2011 |
20110304990 | HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes: a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer; an adhesive layer formed between the second region of the core layer and the build-up layer; and an impregnation device mounted on the build-up layer to be impregnated into the adhesive layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by heat of the heat generating element. The impregnation device is formed on the build-up layer and is impregnated into the adhesive layer, thereby efficiently utilizing a space. | 12-15-2011 |
20120000697 | PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a printed circuit board, including: a substrate having a cavity formed therein; an anodic oxide layer formed by anodizing the substrate; and a circuit layer formed in the cavity. The printed circuit board is advantageous in that, since a circuit layer is formed in a cavity of a substrate, a circuit layer having a thickness necessary for realizing a high-power semiconductor package can be easily formed, and the difficulty of supplying and demanding the raw material of a thick film plating resist can be overcome. Further, the printed circuit board is advantageous in that electrical shorts occurring at the time of forming a thick circuit layer and electrical shorts generated by the compounds remaining after etching can be prevented, thus improving the electrical reliability and stability of a circuit layer. | 01-05-2012 |
20120067623 | HEAT-RADIATING SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a heat-radiating substrate, including: a copper substrate; an alumina layer formed on one side of the copper substrate; a first circuit layer formed on the alumina layer; and a second circuit layer formed on the first circuit layer, wherein a heat-radiating element is mounted on a first pad of the first circuit layer or a second pad of the second circuit layer, or is directly mounted on the exposed side of the copper substrate after forming an opening on the alumina layer. | 03-22-2012 |
20120073863 | ANODIZED HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is an anodized heat-radiating substrate. The anodized heat-radiating substrate is advantageous in that it has good radiation characteristics because an anodized oxide layer is formed on the entire surface of a metal layer. And, the anodized heat-radiating substrate is advantageous in that it has high-density/high accumulation characteristics because it forms multi-layered structure by using the connecting member. | 03-29-2012 |
20120103588 | HEAT-DISSIPATING SUBSTRATE - Disclosed herein is a heat-dissipating substrate in order to improve heat-dissipating characteristics. The heat-dissipating substrate, comprising: a copper layer having a predetermined thickness; anodized insulating layers formed on upper and lower surfaces of the copper layer; and aluminum (Al) layers formed between the copper layer and the anodized insulating layer. Therefore, a heat-dissipating function of the base made of the aluminum (Al) layer and the copper (Cu) layer is improved, thereby making it possible to provide a high-output metal substrate appropriate for high-integration/high capacity electronic components. | 05-03-2012 |
20120111610 | HEAT-RADIATING SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a heat-radiating substrate and a method for manufacturing the same. The heat-radiating substrate includes: an anodized substrate having an anodized film formed over a metal substrate; a circuit pattern formed on one surface of the anodized substrate; and a metal layer formed on the other surface of the anodized substrate. The metal layer formed on the other surface of the anodized substrate has the same area as that of the circuit pattern formed on one surface thereof, and is formed within an edge of the anodized substrate. The metal layer is added, making it possible to minimize a warpage problem of the substrate. In addition, a heat radiating plate is in direct contact with the anodized substrate, thereby making it possible to solve a performance deterioration problem of the heat-radiating substrate and a heat generating element and improve a heat-radiating performance. | 05-10-2012 |
20120319259 | POWER MODULE PACKAGE AND METHOD FOR FABRICATING THE SAME - Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: first and second lead frames arranged to face each other, both or either of the first and second frames being made of aluminum; anodized layers formed on portions of the lead frame(s) made of aluminum in the first and second lead frames; and semiconductor devices mounted on first surfaces of the first and second lead frames. | 12-20-2012 |
20120319260 | POWER MODULE PACKAGE AND SYSTEM MODULE HAVING THE SAME - Disclosed herein is a power module package, including: a first substrate having first semiconductor chips mounted thereon; and a second substrate having second semiconductor chips mounted thereon, the second substrate being coupled with the first substrate such that a side surface in a thickness direction thereof is disposed on an upper surface of the first substrate. | 12-20-2012 |
20130009290 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a power module package including: a first substrate; a second substrate having a pad for connection to the first substrate formed on one side or both sides of one surface thereof and having external connection terminals for connection to the outside formed on the other surface thereof; and a lead frame having one end bonded to the first substrate and the other end bonded to the pad of the second substrate to thereby vertically connect the first and second substrates to each other. | 01-10-2013 |
20130009291 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate having grooves formed between a plurality of semiconductor device mounting areas; semiconductor devices mounted on the semiconductor device mounting areas of the base substrate; and a molding formed on the base substrate and in inner portions of the grooves. | 01-10-2013 |
20130010425 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate made of a metal material; cooling channels formed to allow a cooling material to flow in an inner portion of the base substrate; an anodized layer formed on an outer surface of the base substrate; a metal layer formed on a first surface of the base substrate having the anodized layer and including circuits and connection pads; and semiconductor devices mounted on the metal layer. | 01-10-2013 |
20130020111 | SUBSTRATE FOR POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a substrate for a power module package and a method for manufacturing the same, including: a base substrate made of a metal material; an anodized layer formed on the base substrate; and a circuit layer formed on the anodized layer, wherein the anodized layer is formed to correspond to circuit patterns on the circuit layer or is formed to be divided into a plurality of areas. | 01-24-2013 |
20130020687 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames. | 01-24-2013 |
20130042963 | HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes: a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer; an adhesive layer formed between the second region of the core layer and the build-up layer; and an impregnation device mounted on the build-up layer to be impregnated into the adhesive layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by heat of the heat generating element. The impregnation device is formed on the build-up layer and is impregnated into the adhesive layer, thereby efficiently utilizing a space. | 02-21-2013 |
20130062743 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a heat dissipation plate including a first heat dissipation plate and a second heat dissipation plate disposed to be spaced apart from each other; insulating layers formed on the heat dissipation plate; metal layers formed on the insulating layers, semiconductor devices mounted on the metal layers; and lead spacers formed to connect the metal layer of the first heat dissipation plate side or the metal layer of the second heat dissipation plate side with the semiconductor layers, wherein the semiconductor devices formed on the metal layers of the first heat dissipation plate side and the semiconductor devices formed on the metal layer of the second heat dissipation plate side are disposed in a multi-layered type. | 03-14-2013 |
20130062744 | POWER MODULE PACKAGE - Disclosed herein is a power module package, including: a first substrate having one surface and the other surface; first vias formed to penetrate from one surface of the first substrate to the other surface thereof; a metal layer formed on one surface of the first substrate; semiconductor devices formed on the metal layer; and a metal plate formed on the other surface of the first substrate. | 03-14-2013 |
20130069108 | POWER SEMICONDUCTOR MODULE - Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board. | 03-21-2013 |
20130069210 | POWER MODULE PACKAGE - Disclosed herein is a power module package including: a first substrate having one surface and the other surface; a second substrate contacting one side of one surface of the first substrate; and a first lead frame contacting the other side of one surface of the first substrate. The power module package further includes: a first metal layer formed on one side of one surface of the first substrate; a first bonding layer formed on the first metal layer and contacting a lower surface of the second substrate; a second metal layer formed on the other side of one surface of the first substrate; and a second bonding layer formed on the second metal layer and contacting a lower surface of the first lead frame. | 03-21-2013 |
20130105953 | POWER MODULE PACKAGE | 05-02-2013 |
20130105956 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME | 05-02-2013 |
20130134571 | POWER MODULE PACKAGE - Disclosed herein is a power module package including: a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween; and a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path, wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path. | 05-30-2013 |
20130154083 | SEMICONDUCTOR PACKAGE - Disclosed herein is a semiconductor package. The semiconductor package includes a semiconductor module, a first heat dissipation unit, a second heat dissipation unit and a housing. The semiconductor module contains a semiconductor device. The first heat dissipation unit is provided under the semiconductor module. The first heat dissipation unit includes at least one first pipe through which first cooling water passes. A first rotator is rotatably disposed in the first pipe. The second heat dissipation unit is provided on the semiconductor module. The second heat dissipation unit includes at least one second pipe through which second cooling water passes. A second rotator is rotatably to disposed in the second pipe. The housing is provided on opposite sides of the semiconductor module, the first heat dissipation unit and the second heat dissipation unit and supports the semiconductor module, the first heat dissipation unit and the second heat dissipation unit. | 06-20-2013 |
20130233599 | SUBSTRATE FOR POWER MODULE - Disclosed herein is a substrate for a power module. The substrate may include a metal base substrate, an insulating layer formed on the metal base substrate and including a plurality of insulating adhesion layers and a ceramic filler layer formed on a joining interface between the plurality of insulating adhesion layers, and a circuit layer formed on the insulating layer. | 09-12-2013 |
20130270687 | DOUBLE SIDE COOLING POWER SEMICONDUCTOR MODULE AND MULTI-STACKED POWER SEMICONDUCTOR MODULE PACKAGE USING THE SAME - Disclosed herein is a double side cooling power semiconductor module including: a first cooler having a concave part formed in one surface thereof in a thickness direction; a first semiconductor chip mounted on the concave part of the first cooler; a second cooler having one surface and the other surface and formed on one surface of the first cooler so that one surface thereof contacts the first semiconductor chip; a circuit board formed on the other surface of the second cooler; a second semiconductor chip mounted on the circuit board; and a flexible substrate having a circuit layer electrically connecting the first and second semiconductor chips to each other. | 10-17-2013 |
20130337613 | POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames. | 12-19-2013 |
20130343002 | HEAT DISSIPATION SYSTEM FOR POWER MODULE - Disclosed herein is a heat dissipation system for a power module, including: first cooling medium flow parts and second cooling medium flow parts allowing cooling media to flow in first and second directions, respectively. | 12-26-2013 |
20140096380 | HYBRID HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a hybrid heat-radiating substrate including a metal core layer; an oxide insulating core layer that is formed in a thickness direction of the metal core layer to have a shape where the oxide insulating core layer is integrally formed with the metal core layer, an oxide insulating layer that is formed on one surface or both surfaces of the metal core layer, and a circuit layer that is configured to include first circuit patterns formed on the oxide insulating core layer and second circuit patterns formed on the oxide insulating layer, and a method of manufacturing the same. | 04-10-2014 |
20140160817 | POWER FACTOR CORRECTION CIRCUIT AND POWER SUPPLY INCLUDING THE SAME - There are provided a power factor correction circuit, and a power supply including the same, the power factor correction circuit including a main switch adjusting a phase difference between a current and a voltage of input power, a main inductor storing or discharging the power according to switching of the main switch, a snubber circuit unit including a snubber switch forming a transfer path for surplus power present before the main switch is turned on and a snubber inductor adjusting an amount of a current applied to the snubber switch, and a reduction circuit unit including an auxiliary inductor inductively coupled to the snubber inductor and an auxiliary resistor consuming power induced from the snubber inductor through the auxiliary inductor. | 06-12-2014 |