Patent application number | Description | Published |
20100102669 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE DEVICE - A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum. | 04-29-2010 |
20100244626 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT - A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|105|≦49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is λ and the depth of the inter-electrode finger grooves is G, λ and G satisfy the relationship of 0.01λ≦G and wherein, when the line occupation rate of the IDT is η, the groove depth G and line occupation rate η satisfy the relationships of −2.0000×G/λ+0.7200≦η≦−2.5000×G/λ+0.7775 provided that 0.0100λ≦G≦0.0500λ, −3.5898×G/λ+0.7995≦η≦−2.5000+G/λ+0.7775 provided that 0.0500λ09-30-2010 | |
20110199160 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT - It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is Fb | 08-18-2011 |
20110199163 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT - In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, the line occupying ratio causing the maximum electromechanical coupling coefficient and the line occupying ratio causing the maximum reflection of the surface acoustic waves in the IDT are different from each other, the center of the IDT has the line occupying ratio causing an increase in electromechanical coupling coefficient in comparison with the edges of the IDT, and the edges of the IDT have the line occupying ratio causing an increase in reflection of the surface acoustic waves in comparison with the center of the IDT. | 08-18-2011 |
20110204984 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT - It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT. | 08-25-2011 |
20120105165 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE DEVICE - A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum. | 05-03-2012 |
20120212301 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT - A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of 008-23-2012 | |
20130127554 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT - It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is Fb | 05-23-2013 |
20150042408 | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT - A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°, includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of 002-12-2015 | |