Patent application number | Description | Published |
20100120188 | METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE - Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film. | 05-13-2010 |
20110053310 | PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF - The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate. | 03-03-2011 |
20110287570 | LASER PROCESSING APPARATUS, LASER PROCESSING METHOD, AND MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE - To provide a conveying unit that holds a workpiece and conveys the workpiece at a constant rate in one direction, a laser oscillator that emits a pulsed laser beam, a splitter that splits a pulsed laser beam into a pattern having a predetermined geometric pitch, a first deflector that scans the split pulsed laser beam in the other direction substantially orthogonal to the one direction, a second deflector that adjusts and deflects the split pulsed laser beam deflected by the first deflector on the surface to be processed in the one direction so as to scan the resultant pulsed laser beam onto the surface to be processed at a constant rate equal to a rate at which the workpiece is conveyed, and a condenser that condenses the split pulsed laser beam deflected by the second deflector onto the surface to be processed. | 11-24-2011 |
20120015470 | METHOD FOR ROUGHENING SUBSTRATE SURFACE AND METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE - A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film. | 01-19-2012 |
20120097239 | METHOD FOR ROUGHENING SUBSTRATE SURFACE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE - To include a first step of forming a protection film on a surface of a translucent substrate, a second step of exposing the surface of the translucent substrate by forming a plurality of openings arranged regularly at a certain pitch in the protection film, a third step of forming parabolic irregularities including substantially hemispherical depressions arranged substantially uniformly on the surface of the translucent substrate by performing isotropic etching by using the protection film having the openings formed as a mask and under conditions in which the protection film has resistance to the surface of the translucent substrate on which the protection film is formed, and a fourth step of removing the protection film, wherein at the fourth step, the isotropic etching is continued after formation of the parabolic irregularities to separate the protection film from the translucent substrate and round apexes of protruded portions in the parabolic irregularities. | 04-26-2012 |
20130109128 | MANUFACTURING METHOD FOR PHOTOVOLTAIC POWER DEVICE AND MANUFACTURING APPARATUS FOR PHOTOVOLTAIC POWER DEVICE | 05-02-2013 |
20130143348 | HEAT TREATMENT METHOD OF SEMICONDUCTOR WAFERS, MANUFACTURING METHOD OF SOLAR BATTERY, AND HEAT TREATMENT DEVICE - A heat treatment method of the present invention includes mounting a plurality of semiconductor wafers upright on a treatment boat in parallel to each other, inserting the treatment boat in a space above an injector located in a tube to be oriented to plane surfaces of the semiconductor wafers in parallel to an extending direction of the tube, and heating the tube while continuously supplying source gas into the tube through openings of the injector. | 06-06-2013 |
20140308775 | PHOTOVOLTAIC POWER DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic power device includes a P-type silicon substrate, a low-resistance N-type diffusion layer diffused with an N-type impurity in a first concentration formed at a light-incidence surface side, grid electrodes formed on the low-resistance N-type diffusion layer, a P+ layer formed on a back surface, and a back surface electrode formed on the P+ layer. The photovoltaic power device has concave portions provided at a predetermined interval to reach the silicon substrate from an upper surface of the low-resistance N-type diffusion layer, and an upper surface of a region between adjacent concave portions includes the low-resistance N-type diffusion layer. A high-resistance N-type diffusion layer diffused with an N-type impurity in a second concentration, which is lower than the first concentration, is formed in a range of a predetermined depth from a formation surface of the concave portions. | 10-16-2014 |