Patent application number | Description | Published |
20120261642 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PHOTONIC CRYSTAL - An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength. | 10-18-2012 |
20120286313 | RADIATION-EMITTING SEMICONDUCTOR COMPONENT - A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength λ | 11-15-2012 |
20120299041 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation. | 11-29-2012 |
20130168720 | Optoelectronic Device - An optoelectronic component includes at least one radiation-emitting semiconductor element. At least one converter element is used to convert the electromagnetic radiation emitted by the semiconductor element. At least one filter element, which includes filter particles or is formed by the same, scatters and/or absorbs at least one pre-definable wavelength range of the electromagnetic radiation emitted by the semiconductor element more strongly than a wavelength range that is different from the predefined wavelength range. The filter particles have a d50 value, measured in Q0, of at least 0.5 nm to no more than 500 nm and/or the filter particles are designed at least in some areas in a thread-like manner and in a thread-like region have a diameter that is at least 0.5 nm and no more than 500 nm. | 07-04-2013 |
20130193454 | Electric Resistance Element Suitable for Light-Emitting Diode, Laser Diodes, or Photodetectors - An electric resistance element comprising: a base body, which is formed with a semiconductor material; a first contact element, which is electrically conductively connected to the base body; and a second contact element, which is electrically conductively connected to the base body. The base body has a first main surface into which a cutout is introduced. The first contact element is electrically conductively connected to the base body at least in places in the cutout. The base body has a second main surface, which is arranged in a manner lying opposite the first main surface. The second contact element is electrically conductively connected to the base body at least in places at the second main surface | 08-01-2013 |
20130293097 | LIGHTING DEVICE WITH LED CHIP AND PROTECTIVE CAST - The lighting device has at least one LED chip that is potted by means of a potting compound, which potting compound has a light-transmissive, castable and curable matrix material comprising scattering volumes as filler material, wherein the scattering volumes are distributed inhomogeneously over a thickness of the potting compound and these scattering volumes have a lower density than the matrix material in its castable state. A method is used for producing a lighting device, which comprises at least one LED chip, by means of at least the following steps: potting the at least one LED chip by means of a potting compound containing scattering volumes, wherein the scattering volumes have a lower density than a matrix material of the potting compound in this state; curing the potting compound so that an inhomogeneous distribution of the scattering volumes is obtained owing to floating of the scattering volumes in the matrix material. | 11-07-2013 |
20140133148 | LIGHTING DEVICE - A lighting device may include: a carrier having a mounting surface, at least one luminescence diode chip having, at its side facing away from the carrier, a radiation exit surface, through which electromagnetic radiation generated in the luminescence diode chip during operation emerges at least partly, at least one optical body designed in a radiation-transmissive fashion, and a shaped body including a phosphor, wherein each luminescence diode chip is fixed to the mounting surface on the carrier, each optical body is fixed to the radiation exit surface of an assigned luminescence diode chip, the shaped body encloses each optical body in a positively locking manner at a side surface of the optical body, and the phosphor converts at least part of the electromagnetic radiation generated in at least one of the luminescence diode chips during operation. | 05-15-2014 |
20140190732 | Carrier Device, Electrical Device Having a Carrier Device and Method for Producing Same - A carrier device for an electrical component includes a carrier, which includes an electrically insulating layer, and an electrical contact layer on the electrically insulating layer The electrical contact layer includes at least one bridge-shaped contact region At least one recess in the electrically insulating layer is arranged at least on one side surface of the bridge-shaped contact region and/or the bridge-shaped contact region includes a bridge width reducing toward the insulating layer. | 07-10-2014 |
20140191255 | LED MODULE - In various embodiments, a light emitting diode module may include a carrier plate, at least one light emitting diode, and at least one sensor configured to register light emitted by the light emitting diode. The light emitting diode is attached to a light emitting diode installation side of the carrier plate. The sensor is installed countersunk through a hole of the carrier plate in relation to the light emitting diode installation side thereof. | 07-10-2014 |
20140376223 | LIGHT SOURCE WITH LED CHIP AND LUMINOPHORE LAYER - A light source may include an LED chip having a light-emitting surface, on which a luminophore layer is arranged. The luminophore layer may include adjacently arranged regions having different luminophores. A lighting device may include at least one light source. | 12-25-2014 |
20150014711 | OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE - Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas. | 01-15-2015 |
20150055319 | WAVELENGTH CONVERSION STRUCTURE FOR A LIGHT SOURCE - A wavelength conversion structure for a light source including a solid-state light-emitting device. The wavelength conversion structure includes one or more apertures formed therein. The apertures may permit color steering of the light downstream of the conversion structure without a substantial reduction in the output of secondary light produced during a conversion process. | 02-26-2015 |