Patent application number | Description | Published |
20090010072 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 01-08-2009 |
20090213649 | Semiconductor processing device and IC card - A semiconductor processing device according to the invention includes a first non-volatile memory ( | 08-27-2009 |
20090256193 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode | 10-15-2009 |
20100074029 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF - A p-type well region is formed at a main surface of a semiconductor substrate. An n-type impurity region is located under the p-type well region. A first insulating layer ( | 03-25-2010 |
20100157689 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 06-24-2010 |
20110309428 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 12-22-2011 |
20130235668 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 09-12-2013 |
20140198577 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 07-17-2014 |