Patent application number | Description | Published |
20120156512 | Solder Paste, Joining Method Using the Same and Joined Structure - A solder paste including a metal component consisting of a first metal powder and a second metal powder having a melting point higher than that of the first metal, and a flux component. The first metal is Sn or an alloy containing Sn, and the second metal is a metal or alloy which forms an intermetallic compound having a melting point of 310° C. or higher with the first metal and has a lattice constant difference, i.e. a difference in between the lattice constant of the intermetallic compound and the lattice constant of the second metal component, of 50% or greater. | 06-21-2012 |
20130233618 | CONDUCTIVE MATERIAL, BONDING METHOD USING THE SAME, AND BONDED STRUCTURE - A conductive material that includes a metal component consisting of a first metal and a second metal having a melting point higher than that of the first metal, wherein the first metal is Sn or an alloy containing 70% by weight or more of Sn, and the second metal is a metal or alloy which forms an intermetallic compound having a melting point of 310° C. or higher with the first metal and has a lattice constant difference of 50% or greater between itself and the intermetallic compound generated at the circumference of the second metal. | 09-12-2013 |
20130270001 | Connection Structure - A connection structure that includes a region where at least a Cu—Sn intermetallic compound, a M-Sn intermetallic compound and a Cu-M-Sn intermetallic compound (where M is Ni and/or Mn) exist in a cross-section of a connecting part when the cross-section of the connecting part is analyzed with a WDX. Further, the connection structure is configured so that when the cross-section of the connecting part is evenly divided into ten sections in a vertical direction and a lateral direction, respectively, to form 100 segmentalized squares in total, a ratio of the number of squares in which two or more kinds of intermetallic compounds having different constituent elements exist to the number of all the squares, except for squares in which only a Sn-based metal component exists, is 70% or more. | 10-17-2013 |
20130299219 | MULTILAYER CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a multilayer circuit board that includes a plurality of resin layers, conductive wiring layers, and via-hole conductors. Each of the resin layers includes a resin sheet containing a resin and a conductive wiring layer disposed on at least one surface of the resin sheet. The via-hole conductors contain an intermetallic compound having a melting point of 300° C. or more produced by a reaction between a first metal composed of Sn or an alloy containing 70% by weight or more Sn and a second metal composed of a Cu—Ni alloy or a Cu—Mn alloy. The second metal has a higher melting point than the first metal. | 11-14-2013 |
20130299236 | JOINING METHOD, JOINT STRUCTURE, ELECTRONIC DEVICE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC PART - A method of joining a first metal member having at least a surface made of a first metal to a second metal member having at least a surface made of a second metal with a joining material sandwiched therebetween. The joining material includes a low melting point metal having a lower melting point than the first metal and/or the second metal. The low melting point metal composing the joining material is Sn or an alloy containing Sn. At least one of the first metal and the second metal is a metal or an alloy which forms an intermetallic compound with the low melting point metal, and which has a lattice constant difference of 50% or more from the intermetallic compound. The joining material located between the first metal member and the second metal member is heat-treated at a temperature at which the low melting point metal is melted. | 11-14-2013 |
20130343023 | ELECTRONIC COMPONENT MODULE AND METHOD FOR MANUFACTURING THE SAME - In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu—Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more. | 12-26-2013 |
20140178703 | ELECTROCONDUCTIVE MATERIAL, AND CONNECTION METHOD AND CONNECTION STRUCTURE USING THE SAME - An electroconductive material that includes a metal component containing a first metal and a second metal having a higher melting point than the first metal, and has a configuration in which the first metal is Sn or an alloy containing Sn, and the second metal is a Cu—Al alloy which forms, with the first metal, an intermetallic compound exhibiting a melting point of 310° C. or higher. The first metal can be Sn alone or an alloy containing Sn and at least one of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te, and P. | 06-26-2014 |
20140193650 | ELECTROCONDUCTIVE MATERIAL, AND CONNECTION METHOD AND CONNECTION STRUCTURE USING THE SAME - An electroconductive material that includes a metal component containing a first metal and a second metal having a higher melting point than the first metal, and has a configuration in which the first metal is Sn or an alloy containing Sn, and the second metal is a Cu—Cr alloy which forms, with the first metal, an intermetallic compound exhibiting a melting point of 310° C. or higher. The first metal can be Sn alone or an alloy containing Sn and at least one of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te, and P. | 07-10-2014 |
20140340816 | Electronic Part - An electronic part that includes an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu—Ni alloy layer and a Cu—Mn alloy layer, and a Sn-containing layer on the outer side of the alloy layer. The Sn-containing layer is the outermost layer of the external electrode. The Sn-containing layer is in contact with the alloy layer. | 11-20-2014 |
20140345939 | JOINING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE AND ELECTRONIC PART - In joining a first metal member composed of a first metal to a second metal member composed of a second metal with a joining material interposed therebetween, the joining material including a low melting point metal having a lower melting point than the first metal and/or the second metal, the low melting point metal composing the joining material is Sn or an alloy containing Sn, at least one of the first metal and the second metal is a metal or an alloy which forms an intermetallic compound with the low melting point metal composing the joining material, and heat treatment is performed at a temperature at which the low melting point metal melts in a state of locating the joining material between the first metal member and the second metal member. | 11-27-2014 |
20140356055 | JOINING METHOD, JOINT STRUCTURE AND METHOD FOR PRODUCING THE SAME - When a first joining object and a second joining object are joined to each other, the first joining object has a first metal composed of Sn or an alloy containing Sn, the second joining object has a second metal composed of an alloy containing at least one selected from among Ni, Mn, Al and Cr, and Cu. The first joining object and the second joining object are subjected to heat treatment in a state of being in contact with each other to produce an intermetallic compound at an interface between both joining objects such that both joining object are joined to each other. An alloy containing Sn in an amount of 70% by weight or more is used as the first metal. An alloy containing Sn in an amount of 85% by weight or more is used as the first metal. | 12-04-2014 |
20140363221 | JOINING METHOD, JOINT STRUCTURE AND METHOD FOR PRODUCING THE SAME - A first joining object and a second joining object are joined to each other using an insert material. The first joining object and/or the second joining object has a first metal composed of Sn or an alloy containing Sn. The insert material contains, as a main component, a second metal which is an alloy containing at least one selected from among Ni, Mn, Al and Cr, and Cu, and is located between the first joining object and the second joining object. When subjected to heat treatment to produce an intermetallic compound of the first metal and the second metal, the first joining object and the second joining object are joined to each other. | 12-11-2014 |
20150034701 | ELECTRONIC PART AND METHOD FOR FORMING JOINT STRUCTURE OF ELECTRONIC PART AND JOINING OBJECT - An electronic part including an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu—Ni alloy layer and a Cu—Mn alloy layer, and an antioxidant film formed on the outer side of the alloy layer. The antioxidant film is one of a Sn-containing film, a noble metal film, and an organic substance film. | 02-05-2015 |