Patent application number | Description | Published |
20130288076 | STACK WITH WIDE SEED LAYER - A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets. | 10-31-2013 |
20140356648 | STACK WITH WIDE SEED LAYER - A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets. | 12-04-2014 |
20150084624 | MAGNETORESISTIVE SENSOR - Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack. | 03-26-2015 |
20150311430 | MAGNETORESISTIVE SENSOR - Implementations disclosed herein provide a magnetoresistive (MR) sensor including a free layer comprising a first layer of CoFeB or CoFe/CoFeB and a second layer made of an alloyed layer including a ferromagnetic material and a refractory material. An implementation of the MR sensor further includes a cap layer adjacent to the second layer wherein the cap layer does not include any tantalum. | 10-29-2015 |
20150325260 | SENSOR STACK STRUCTURE - A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property. | 11-12-2015 |
20150332714 | MAGNETORESISTIVE SENSOR - Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each includes a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack. | 11-19-2015 |
20150369879 | MAGNETIC SENSOR ANNEALING USING A ROCKING FIELD - Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure. | 12-24-2015 |
20160118066 | SENSOR STRUCTURE HAVING INCREASED THERMAL STABILITY - A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni). | 04-28-2016 |