Patent application number | Description | Published |
20090155580 | Production Methods of Semiconductor Crystal and Semiconductor Substrate - To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal. | 06-18-2009 |
20100301358 | Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor - The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal. | 12-02-2010 |
Patent application number | Description | Published |
20080223288 | Crystal growing apparatus - An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping. | 09-18-2008 |
20080295763 | Apparatus for manufacturing Group III nitride semiconductor and method for manufacturing Group III nitride semiconductor - A Group III nitride semiconductor crystal is grown according to a flux method. After completion of the crystal-growing process, Na is discharged from a crucible by a recovery device when the temperature of the crucible is 100° C. or higher, and is held in a holding vessel in a liquid state. The recovered Na can be drawn from the holding vessel via a faucet. Na remaining after completion of the crystal-growing process does not contain impurities of high vapor pressure, and is thus of high purity. Therefore, reuse, as flux, of the recovered Na enables manufacture of a Group III nitride semiconductor whose concentration of impurities is low. | 12-04-2008 |
20080299020 | Apparatus for manufacturing group III nitride semiconductor - An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the pressure vessel so as to heat the reaction vessel, and a glove box filled with argon gas. The pressure vessel and the glove box are connected to each other via a gate valve. By virtue of this configuration, a large-sized reusable reaction vessel can be disposed within the pressure vessel without causing oxidation of Na. | 12-04-2008 |
20090106959 | Group III nitride semiconductor manufacturing system - The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal. | 04-30-2009 |
20090173969 | Semiconductor Device - A semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer and a GaN layer which device exhibits no changes over time in sheet resistance. | 07-09-2009 |
20100270548 | Semiconductor element and method of making same - A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face. | 10-28-2010 |
Patent application number | Description | Published |
20080297151 | MRI phantom and MRI system - It is intended to provide a Magnetic Resonance Imaging (MRI) phantom for | 12-04-2008 |
20090128155 | RF coil and MRI apparatus - An RF coil having at least three different resonance frequencies, wherein one of the resonance frequencies is adjusted to be a frequency f | 05-21-2009 |
20100158816 | GAS BUBBLE-GENERATING AGENT - This invention provides a gas bubble-generating agent that can be used as a contrast medium or a blocking agent in vivo. Such gas bubble-generating agent is produced by a method for producing a gas bubble-generating agent comprising the following steps of: (a) preparing a mixed solution of an amphiphilic substance, an amphiphilic substance comprising a water-soluble polymer chemically bound thereto, a hardly water-soluble substance having a boiling point of lower than 60° C. at atmospheric pressure, and a physiologically acceptable isotonic solution; (b) pressurizing the mixed solution; and (c) centrifuging the mixed solution after the step of pressurization, wherein a molar concentration of the amphiphilic substance in the mixed solution prepared in step (a) is 10 times or more higher than that of the amphiphilic substance comprising a water-soluble polymer chemically bound thereto. | 06-24-2010 |
20110267062 | BALUN AND MAGNETIC RESONANCE IMAGING APPARATUS - The present invention provides a technique for maintaining a function for effectively blocking common mode noise with a simple configuration, even in the case where unbalance occurs in characteristic impedance of a coaxial cable in an MRI apparatus, and improving the performance of an RF coil. In a circuit where a balun is established by parallel connection with the coaxial cable, multiple serial resonance circuits having different resonance frequencies are connected in parallel. A value of each constitutional element of each of the serial resonance circuits is adjusted in such a manner that the frequency for blocking the common mode noise of the entire balun falls into a range between the resonance frequencies of these serial resonance circuits. | 11-03-2011 |
20130069652 | RF COIL AND MAGNETIC RESONANCE IMAGING DEVICE - There is a provided a technology of receiving a magnetic resonance signal highly sensitively and with a uniform sensitivity distribution in an RF coil of an MRI device which is an RF coil including a switch circuit of switching a circuit configuration. The RF coil of the MRI device of the present invention includes a switch circuit of switching a circuit configuration. Also, the switch circuit switches the circuit configuration by being driven by a control signal received by wireless. For that purpose, the switch circuit includes an antenna of receiving the control signal and a conversion circuit of converting an alternating current voltage received into a direct current voltage. | 03-21-2013 |
Patent application number | Description | Published |
20140126032 | IMAGE DISPLAY DEVICE - An image display device having a scanning characteristic excellent in the linearity without being upsized is provided. | 05-08-2014 |
20140126033 | IMAGE DISPLAY DEVICE - An image display device having a scanning characteristic excellent in the linearity without being upsized is provided. The image display device includes: an optical scanning unit that scans a light emitted from a light source in a first direction and a second direction of an image plane due to a rotational movement of reciprocation of a reflecting surface of the light; and an optical system enlarges a scanning angle of the scanned light, in which the optical system has a free curved surface lens on an optical scanning unit side, and has a free curved surface mirror on an image plane side. The free curved surface mirror may be arranged so that the first direction is substantially parallel to a first plane defined by an incident optical beam and a reflected light in the free curved surface mirror when the optical scanning unit remains static in the center of the scanning range. | 05-08-2014 |
20140333590 | DIGITAL PEN - A digital pen includes a light emitting element configured to emit a light ray of a specific wavelength region; a pen tip configured to emit the light ray on a writing surface; a sensor configured to output information indicative of whether the pen tip contacts the writing surface; a controller configured to detect if the pen tip contacts the writing surface based on the information from the sensor; and a holding mechanism configured to hold pressure applied onto the sensor to be constant, through an elastic force of an elastic body. The controller determines that the pen tip contacts the writing surface when the sensor is free from the pressure, thereby dissolving a problem of an uncomfortable feeling for a user, which is caused by the fact that the track written by the digital pen is not immediately reflected on a screen. | 11-13-2014 |
20150153551 | PINHOLE ARRAY AND DISPLAY DEVICE USING SAME - Two pieces of elliptic semi-sphere surfaces, each forming a pinhole at the zenith thereof and also forming a reflection mirror on an inside thereof are stuck onto each other, with facing the interior surfaces thereof, respectively. A light ray entering therein from one of the pinholes, after being reflected between the elliptic semi-sphere surfaces facing to each other, emits from the pinhole on opposite side at an angle plane symmetric to the incident angle. Disposing the elliptic semi-sphere surfaces facing to each other, aligning on a plane, by plural numbers thereof, there is built up a pinhole array. Plural numbers of light rays reflecting on and/or emitting from a display object, which is disposed on one side of the pinhole array, after passing through the plural numbers of pinholes of the pinhole array, form an image at a position plane symmetric thereto, on the opposite side of the pinhole array. | 06-04-2015 |