Patent application number | Description | Published |
20100011813 | QUARTZ GLASS MANUFACTURING METHOD AND QUARTZ GLASS MANUFACTURING APPARATUS - Provided is a quartz glass manufacturing method that involves using one or more burners, supplying hydrogen and oxygen to the one or more burners to generate an oxyhydrogen flame, introducing a silicide into the oxyhydrogen flame, forming a porous base material by depositing silicon dioxide generated from a flame hydrolysis reaction with the silicide, and heating and sintering the porous base material to form transparent glass, the method comprising supplying hydrogen that is stored or made at a normal temperature to the one or more burners; controlling a hydrogen flow rate using a measurement apparatus or control apparatus that performs measurement based on heat capacity of a gas; vaporizing liquid hydrogen stored in a low-temperature storage chamber, and supplying the vaporized liquid hydrogen to the one or more burners as backup hydrogen; switching from the hydrogen to the backup hydrogen; and when switching, adjusting the hydrogen flow rate to a value obtained by multiplying the hydrogen flow rate immediately after switching by a predetermined correction coefficient. | 01-21-2010 |
20100015038 | HYDROGEN SUPPLY EQUIPMENT - Provided is hydrogen supply equipment that, when switching hydrogen supplied to equipment using hydrogen from (i) hydrogen produced at a normal temperature or hydrogen stored at a normal temperature to (ii) hydrogen stored at a low temperature, supplies the equipment using hydrogen with normal hydrogen obtained by returning the hydrogen at the low temperature to a normal temperature and then passing this hydrogen through equipment for accelerating a conversion from parahydrogen to orthohydrogen. | 01-21-2010 |
20100209859 | APPARATUS AND METHOD FOR SUPPLYING HYDROGEN GAS, AND QUARTZ GLASS MANUFACTURING APPARATUS - There is provided an apparatus for supplying a hydrogen gas to a quartz glass manufacturing apparatus including a burner that generates an oxyhydrogen flame when supplied with the hydrogen gas, where the apparatus includes: a first hydrogen supply system that supplies a hydrogen gas in which isotopes are in equilibrium; a second hydrogen supply system that supplies a hydrogen gas in which isotopes are out of equilibrium; a flow rate control section that includes: a valve that changes a flow rate of the hydrogen gas to be supplied to the burner; a first flow rate measuring section that measures the flow rate of the hydrogen gas to be supplied to the burner by measuring a heat capacity; and a control section that controls the valve in such a manner that a measured value obtained by the first flow rate measuring section approaches a set value input from outside; a second flow rate measuring section that measures the flow rate of the hydrogen gas to be supplied to the burner by measuring a different factor than the heat capacity; and a set value compensating section that compensates the set value by multiplying the set value by a ratio between the measured value obtained by the first flow rate measuring section and a measured value obtained by the second flow rate measuring section. | 08-19-2010 |
20110107797 | OPTICAL FIBER PREFORM MANUFACTURING METHOD AND OPTICAL FIBER PREFORM MANUFACTURING DEVICE - An optical fiber base material manufacturing method includes: supplying oxygen, hydrogen, and silicide to a core deposition burner; depositing silicon dioxide; adjusting a drawing up speed so that a deposition tip position remains at the same position in accordance with growth of a porous base material; calculating an average of the drawing up speed at each preset time interval; calculating a difference of the calculated average from a preset value of the drawing up speed; correcting a flow rate of silicon tetrachloride when the supplied hydrogen is hydrogen produced or stored at normal temperature, and correcting a flow rate of hydrogen when the supplied hydrogen is hydrogen obtained by vaporizing liquid hydrogen, where when correcting the flow rate of hydrogen, a flow rate of hydrogen supplied to a cladding deposition burner is also corrected in a ratio of before and after the correction of the flow rate of the hydrogen. | 05-12-2011 |
20140283557 | QUARTZ GLASS MANUFACTURING METHOD USING HYDROGEN OBTAINED BY VAPORIZING LIQUID HYDROGEN - Provided is a quartz glass manufacturing method that involves using one or more burners, supplying hydrogen and oxygen to the one or more burners to generate an oxyhydrogen flame, introducing a silicide into the oxyhydrogen flame, forming a porous base material by depositing silicon dioxide generated from a flame hydrolysis reaction with the silicide, and heating and sintering the porous base material to form transparent glass, the method comprising supplying hydrogen that is stored or made at a normal temperature to the one or more burners; controlling a hydrogen flow rate using a measurement apparatus or control apparatus that performs measurement based on heat capacity of a gas; vaporizing liquid hydrogen stored in a low-temperature storage chamber, and supplying the vaporized liquid hydrogen to the one or more burners as backup hydrogen; switching from the hydrogen to the backup hydrogen; and when switching, adjusting the hydrogen flow rate to a value obtained by multiplying the hydrogen flow rate immediately after switching by a predetermined correction coefficient. | 09-25-2014 |
Patent application number | Description | Published |
20110048935 | Sputtering Target with Low Generation of Particles - Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof. | 03-03-2011 |
20120273347 | SPUTTERING TARGET WITH REDUCED PARTICLE GENERATION AND METHOD OF PRODUCING SAID TARGET - Provided is a sputtering target with reduced particle generation having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, and in which the area ratio of defects on the target surface is 0.5% or less, as well as a method of producing such a sputtering target. Additionally provided are a sputtering target wherein the target surface, which contains large amounts of substances without ductility, is improved, and whereby the generation of nodules and particles during sputtering can be prevented or inhibited, and a surface finishing method thereof. | 11-01-2012 |
Patent application number | Description | Published |
20090134403 | DIAMOND ULTRAVIOLET SENSOR - In a conventional ultraviolet sensing device using a diamond semiconductor in a light-receiving unit, an Au-based electrode material is used for both a rectifier electrode and an ohmic electrode. However, the Au-based electrode material has fatal defects, such as poor adhesion to diamond, low mechanical strength, and furthermore poor thermal stability. | 05-28-2009 |
20100090226 | DIAMOND UV-RAY SENSOR - Au base electrode materials have fatal disadvantages, such as inferior adhesion to diamond, low mechanical strength, and low thermal stability. | 04-15-2010 |
20100289031 | DIAMOND SEMICONDUCTOR DEVICE - The diamond semiconductor device is a diamond semiconductor device where a pair of electrodes are fixed on a diamond substrate, and wherein at least one interface to the electrode on the surface of the diamond substrate has a hydrogen termination and at least the surface of the substrate between the pair of two electrodes is controlled to have a larger electric resistivity value than inside the substrate. Accordingly, a diamond semiconductor device can be realized, capable of attaining the device work stability, especially the device work stability in severe environments such as high temperature with exhibiting the function of the hydrogen termination thereof to the utmost extent. | 11-18-2010 |