Patent application number | Description | Published |
20090242958 | NAND-TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide, | 10-01-2009 |
20110049611 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - In a memory cell portion, a stacked structure, in which dielectric layers and semiconductor layers are alternately stacked, is arranged in a fin shape on a semiconductor substrate, and in a peripheral circuit portion, a gate electrode is arranged on the semiconductor substrate via a gate dielectric film so that a height of an upper surface of the gate electrode is set to be substantially equal to a height of an upper surface of the stacked structure in which the dielectric layers and the semiconductor layers are alternately stacked. | 03-03-2011 |
20110266612 | NAND-TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide,
| 11-03-2011 |
Patent application number | Description | Published |
20080305647 | Method for Manufacturing a Semiconductor Device - It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower. | 12-11-2008 |
20100080062 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel. | 04-01-2010 |
20100080065 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer. | 04-01-2010 |
20100213435 | SWITCHING DEVICE AND NONVOLATILE MEMORY DEVICE - A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp | 08-26-2010 |
20120069679 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching a potential of the gate electrodes with that of the semiconductor layer. | 03-22-2012 |
20120193597 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a memory section. The memory section includes a first insulating layer, a second insulating layer and a pair of electrodes. The second insulating layer is formed on and in contact with the first insulating layer. The second insulating layer has at least one of a composition different from a composition of the first insulating layer and a phase state different from a phase state of the first insulating layer. The pair of electrodes is capable of passing a current through a current path along a boundary portion between the first insulating layer and the second insulating layer. An electrical resistance of the current path is changed by a voltage applied between the pair of electrodes. | 08-02-2012 |
20130135938 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching is a potential of the gate electrodes with that of the semiconductor layer. | 05-30-2013 |
Patent application number | Description | Published |
20090236653 | Nonvolatile semiconductor memory device - A nonvolatile semiconductor memory device includes a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and a control gate electrode. The tunnel insulating film is formed on a selected part of a surface of a semiconductor substrate. The floating gate electrode is formed on the tunnel insulating film. At least that interface region of the floating gate electrode, which is opposite to the substrate, is made of n-type Si or metal-based conductive material. The inter-electrode insulating film is formed on the floating gate electrode and made of high-permittivity material. The control gate electrode is formed on the inter-electrode insulating film. At least that interface region of the control gate electrode, which is on the side of the inter-electrode insulating film, is made of a p-type semiconductor layer containing at least one of Si and Ge. | 09-24-2009 |
20100072535 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film. | 03-25-2010 |
20130062686 | NON-VOLATILE SEMICONDUCTOR MEMORY USING CHARGE-ACCUMULATION INSULATING FILM - There is provided a non-volatile semiconductor memory having a charge accumulation layer of a configuration where a metal oxide with a dielectric constant sufficiently higher than a silicon nitride, e.g., a Ti oxide, a Zr oxide, or a Hf oxide, is used as a base material and an appropriate amount of a high-valence substance whose valence is increased two levels or more (a VI-valence) is added to produce a trap level that enables entrance and exit of electrons with respect to the base material. | 03-14-2013 |