Knuteson
Cody W. Knuteson, Salem, UT US
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20140023301 | BEARING ASSEMBLIES, APPARATUSES, AND MOTOR ASSEMBLIES USING THE SAME - Various embodiments of the invention relate to bearing assemblies, apparatuses and motor assemblies that include geometric features configured to impart a selected amount of heat transfer and/or hydrodynamic film formation. In an embodiment, a bearing assembly may include a plurality of superhard bearing pads distributed circumferentially about an axis. At least some of the plurality of superhard bearing pads may include a plurality of sub-superhard bearing elements defining a bearing surface. At least some of the plurality of sub-superhard bearing elements may be spaced from one another by one or more voids to impart a selected amount of heat transfer and hydrodynamic film formation thereon during operation. The bearing assembly may also include a support ring that carries the plurality of superhard bearing pads. In addition, at least a portion of the sub-superhard bearing elements may extend beyond the support ring. | 01-23-2014 |
Cody William Knuteson, Salem, UT US
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20150136495 | POLYCRYSTALLINE DIAMOND COMPACT, AND RELATED METHODS AND APPLICATIONS - Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a polycrystalline diamond (“PCD”) table in which a metal-solvent catalyst is alloyed with at least one alloying element to improve thermal stability of the PCD table. In an embodiment, a PDC includes a substrate and a PCD table bonded to the substrate. The PCD table includes diamond grains defining interstitial regions. The PCD table includes an alloy comprising at least one Group VIII metal and at least one metallic alloying element that lowers a temperature at which melting of the at least one Group VIII metal begins. The alloy includes one or more solid solution phases comprising the at least one Group VIII metal and the at least one metallic alloying element and one or more intermediate compounds comprising the at least one Group VIII metal and the at least one metallic alloying element. | 05-21-2015 |
David J. Knuteson, Linthicum, MD US
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20080206121 | Solid solution wide bandgap semiconductor materials - A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN) | 08-28-2008 |
20100192840 | SEMICONDUCTOR HETEROJUNCTION DEVICES BASED ON SiC | 08-05-2010 |
David J. Knuteson, Ellicott City, MD US
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20090220801 | METHOD AND APPARATUS FOR GROWTH OF HIGH PURITY 6H-SIC SINGLE CRYSTAL - The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate. | 09-03-2009 |
20090302426 | Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom - A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like. | 12-10-2009 |
David J. Knuteson, Columbia, MD US
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20080218940 | High dielectric capacitor materials and method of their production - Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu | 09-11-2008 |
20090014756 | Method of producing large area SiC substrates - A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals. | 01-15-2009 |
George Knuteson, Hugo, MN US
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20090058035 | Hand-driven wheelchair - A hand-operated assembly that supplies secondary drive power and steering control to a secondary drive wheel of a wheel chair. The assembly comprises a handle that is controlled with one hand and a linkage rod that extends from the handle to an eccentric arm fitted to a one-way clutch assembly at a secondary drive wheel support axle. Reciprocating up-down, pivoting movements of the handle over a range Y′ in the Y axis directs a linkage rod to rotate an eccentric arm fitted to a one-way clutch and a drive axle of a small diameter, secondary drive wheel. Independent 360° rotation of the handle about a second, horizontal or Z axis steers the secondary drive wheel. A portion Y′ of the range of handle motion directs a flange at the linkage arm to engage a brake piece that contacts the secondary drive wheel. Large diameter, hand driven, primary drive wheels are separately available to the user for effecting normal chair conveyance. | 03-05-2009 |