Patent application number | Description | Published |
20110045648 | METHODS FOR FABRICATING BULK FINFET DEVICES HAVING DEEP TRENCH ISOLATION - Methods are provided for fabricating Bulk FinFET devices having deep trench isolation. One or more deep isolation trenches are formed in a bulk silicon wafer. Mandrel-forming material is deposited overlying the bulk silicon wafer and dielectric pad layer thereon and simultaneously into the trench(es) as filler material. Mandrels are formed, overetching thereof creating a recess at the trench upper end. A conformal sidewall spacer material from which sidewall spacers are fabricated is deposited overlying the mandrels and into the recess forming a spacer overlying the filler material in the trench(es). Mandrels are removed using the spacer as an etch stop. Fin structures are formed from the bulk silicon wafer using the sidewall spacers as an etch mask. The mandrel-forming material is amorphous and/or polycrystalline silicon. | 02-24-2011 |
20110062501 | METHOD FOR SELF-ALIGNING A STOP LAYER TO A REPLACEMENT GATE FOR SELF-ALIGNED CONTACT INTEGRATION - Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the removable gate electrode and the substrate, removing a portion of the self aligned contact stop layer over the removable gate electrode and the electrode itself leaving an opening, forming a replacement gate electrode of metal, in the opening, transforming an upper portion of the metal into a dielectric layer, and forming a self aligned contact. Embodiments include forming the contact stop layer of a dielectric material, e.g., a hafnium oxide, an aluminum oxide, or a silicon carbide and transforming the upper portion of the metal into a dielectric layer by oxidation, fluorination, or nitridation. Embodiments also include forming a hardmask layer over the removable gate electrode to protect the electrode during silicidation in source/drain regions of the semiconductor device. | 03-17-2011 |
20110068431 | SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING ISOLATION BETWEEN FIN STRUCTURES OF FINFET DEVICES - Semiconductor structures and methods for forming isolation between fin structures formed from a bulk silicon wafer are provided. A bulk silicon wafer is provided having one or more fin structures formed therefrom. Forming of the fin structures defines isolation trenches between the one or more fin structures. Each of the fin structures has vertical sidewalls. An oxide layer is deposited in the isolation trenches and on the vertical sidewalls using HPDCVD in about a 4:1 ratio or greater. The oxide layer is isotropically etched to remove the oxide layer from the vertical sidewalls and a portion of the oxide layer from the bottom of the isolation trenches. A substantially uniformly thick isolating oxide layer is formed on the bottom of the isolation trench to isolate the one or more fin structures and substantially reduce fin height variability. | 03-24-2011 |
20110163417 | METHOD TO DYNAMICALLY TUNE PRECISION RESISTANCE - A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging. | 07-07-2011 |
20110204419 | INTEGRATED CIRCUITS INCLUDING MULTI-GATE TRANSISTORS LOCALLY INTERCONNECTED BY CONTINUOUS FIN STRUCTURE AND METHODS FOR THE FABRICATION THEREOF - Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate and a plurality of locally interconnected multi-gate transistors. The plurality of locally interconnected multi-gate transistors includes a continuous fin structure formed on the substrate and first and second multi-gate transistors formed on the substrate and including first and second fin segments of the continuous fin structure, respectively. The continuous fin structure electrically interconnects the first and second multi-gate transistors. | 08-25-2011 |
20120018816 | SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS - A semiconductor device is formed with low resistivity self aligned silicide contacts with high-K/metal gates. Embodiments include postponing silicidation of a metal layer on source/drain regions in a silicon substrate until deposition of a high-K dielectric, thereby preserving the physical and morphological properties of the silicide film and improving device performance. An embodiment includes forming a replaceable gate electrode on a silicon-containing substrate, forming source/drain regions, forming a metal layer on the source/drain regions, forming an ILD over the metal layer on the substrate, removing the replaceable gate electrode, thereby forming a cavity, depositing a high-K dielectric layer in the cavity at a temperature sufficient to initiate a silicidation reaction between the metal layer and underlying silicon, and forming a metal gate electrode on the high-K dielectric layer. | 01-26-2012 |
20120068234 | METHOD FOR SELF-ALIGNING A STOP LAYER TO A REPLACEMENT GATE FOR SELF-ALIGNED CONTACT INTEGRATION - Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the electrode and the substrate, removing a portion of the self aligned contact stop layer over the electrode and the electrode itself leaving an opening, forming a replacement gate electrode of metal, in the opening, transforming an upper portion of the metal into a dielectric layer, and forming a self aligned contact. Embodiments include forming the contact stop layer of a dielectric material, and transforming the upper portion of the metal into a dielectric layer. Embodiments also include forming a hardmask layer over the removable gate electrode to protect the electrode during silicidation in source/drain regions of the semiconductor device. | 03-22-2012 |
20130187236 | Methods of Forming Replacement Gate Structures for Semiconductor Devices - Disclosed herein are methods of forming replacement gate structures. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define a gate cavity, forming a layer of insulating material in the gate cavity and forming a layer of metal within the gate cavity above the layer of insulating material. The method further includes forming a sacrificial material in the gate cavity so as to cover a portion of the layer of metal and thereby define an exposed portion of the layer of metal, performing an etching process on the exposed portion of the layer of metal to thereby remove the exposed portion of the layer of metal from within the gate cavity, and, after performing the etching process, removing the sacrificial material and forming a conductive material above the remaining portion of the layer of metal. | 07-25-2013 |
20140162447 | FINFET HYBRID FULL METAL GATE WITH BORDERLESS CONTACTS - A method for fabricating a field effect transistor device includes patterning a fin on substrate, patterning a gate stack over a portion of the fin and a portion of an insulator layer arranged on the substrate, forming a protective barrier over the gate stack, a portion of the fin and a portion of the insulator layer, the protective barrier enveloping the gate stack, depositing a second insulator layer over portions of the fin and the protective barrier, performing a first etching process to selectively remove portions of the second insulator layer to define cavities that expose portions of source and drain regions of the fin without appreciably removing the protective barrier, and depositing a conductive material in the cavities. | 06-12-2014 |
20140203405 | METHOD TO DYNAMICALLY TUNE PRECISION RESISTANCE - A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging. | 07-24-2014 |
Patent application number | Description | Published |
20090051906 | Optical tracking device employing a three-axis gimbal - An optical tracking device, includes an azimuth sub-assembly providing a 360-degree range of motion and a transducer sensing the azimuth position within this range of motion; and an elevation sub-assembly coupled to the azimuth sub-assembly and providing at least a −30-degree to +100-degree range of motion and a transducer sensing the elevation position. A cross-elevation sub-assembly is coupled to the elevation sub-assembly and provides at least a ±14-degree optical range of motion and a transducer sensing the cross-elevation position. An elevation gyroscope is affixed to the elevation sub-assembly and generates an elevation rate signal; and a cross-elevation gyroscope is affixed to the elevation sub-assembly and generates a cross-elevation rate signal. A controller receives the azimuth, elevation, and cross-elevation position signals, and the elevation and cross-elevation rate signals and sends command signals to the sub-assemblies to initiate movement to allow inertially stabilized tracking of an object. | 02-26-2009 |
20090323203 | RISLEY INTEGRATED STEERING MODULE - A Risley integrated steering module is disclosed. The beam steering device consists of an outer assembly rotatable about an axis, and an inner assembly rotatable about the axis and positioned radially within the outer assembly. The beam steering device also includes a first prism connected to the outer assembly and a second prism connected to the inner assembly, and a stationary assembly, with the outer and inner assemblies being rotatable about the portion of the stationary assembly. In an alternative embodiment, the inner assembly rotates within the stationary assembly. The beam steering device also consists of beam expansion optics carried by either the inner assembly or the stationary assembly. | 12-31-2009 |
20110043880 | RISLEY INTEGRATED STEERING MODULE - A beam steering device is disclosed which includes an outer assembly rotatable about an axis by a motor assembly, and an inner assembly rotatable about the axis by another motor assembly and positioned radially within the outer assembly. The beam steering device also includes a first prism or grating connected to the outer assembly and a second prism or grating connected to the inner assembly. Both motor assemblies are axially displaced from the steering devices. The beam steering device also consists of beam expansion optics carried by either the inner assembly or the stationary assembly. In a further embodiment, an array of steerable sub-apertures are maintained within the inner and outer assemblies. | 02-24-2011 |
Patent application number | Description | Published |
20130323075 | NICKEL-CHROMIUM-MOLYBDENUM-VANADIUM ALLOY AND TURBINE COMPONENT - A NiCrMoV alloy and a turbine component are disclosed. The NiCrMoV alloy includes at least about 0.06%, at least about 3.40% nickel, between about 0.22% and about 0.30% carbon, up to about 0.60% molybdenum, up to about 0.15% vanadium, up to about 2.00% chromium, up to about 0.012% phosphorus, up to about 0.007% sulfur, up to about 0.10% silicon, up to about 0.002% antimony, up to about 0.008% arsenic, up to about 0.012% tin, and up to about 0.015% aluminum and/or is resistant to embrittlement at temperatures above 700° F. | 12-05-2013 |
20140255206 | TURBINE BLADE COOLING CHANNEL FORMATION - Embodiments of the invention relate generally to turbine blades and, more particularly, to the formation of cooling channels on a surface of a turbine blade and turbine blades including such cooling channels. In one embodiment, the invention provides a method of forming a cooling channel along a surface of a turbine blade, the method comprising: applying a first mask material to a first portion of a surface of a turbine blade; forming a first barrier layer atop the first mask material and atop a second portion of the surface of the turbine blade; removing the first mask material and the barrier layer atop the first mask material to expose the first portion of the surface of the turbine blade; and etching the first portion of the surface of the turbine blade to form a cooling channel along the surface of the turbine blade. | 09-11-2014 |
20150118041 | METHODS AND SYSTEMS FOR SECURING TURBINE NOZZLES - A nozzle assembly includes at least one stationary nozzle and an outer ring having a predefined shape. The outer ring includes at least one groove defined therein configured to receive at least a portion of the at least one stationary nozzle. The nozzle assembly also includes an attachment member coupled between the stationary nozzle and the outer ring. The attachment member has a first configuration at a first nozzle assembly operating temperature a second configuration at a second nozzle assembly operating temperature. | 04-30-2015 |
Patent application number | Description | Published |
20090306955 | METHOD AND SYSTEM FOR ANALYZING ROLLING ELEMENT BEARING SYSTEMS - Methods and systems for analyzing rolling element bearing systems are provided. A graphical user interface (GUI) is rendered on a display device. The graphical user interface includes a plurality of characteristics of the rolling element bearing system and a plurality of widgets associated with the characteristics. An indication of a value is received with each of the widgets. Each value is representative of the respective characteristic of the rolling element bearing system. A first analysis of the rolling element bearing system is performed based on the values with a first rolling element bearing solver. A second analysis of the rolling element bearing system is performed based on the values with a second rolling element bearing solver. Results of at least one of the first and second analyses are displayed on the display device. | 12-10-2009 |
20120033904 | HYDRODYNAMIC GAS FILM BEARING COOLING FLOW CONTROL SYSTEM - A hydrodynamic gas film bearing cooling gas control system includes a hydrodynamic gas film bearing, a supply conduit, and a flow control device. The supply conduit is in fluid communication with the hydrodynamic gas film bearing, is coupled to receive a flow of cooling gas from a cooling gas supply source, and is configured to supply the flow of cooling gas to the hydrodynamic gas film bearing. The flow control device is coupled to the supply conduit and is responsive to a physical characteristic of the cooling gas or ambient environment to move between at least two positions to thereby vary the flow of cooling gas, through the supply conduit, to the hydrodynamic gas film bearing. | 02-09-2012 |
20150041279 | CENTRIFUGAL ENGAGEMENT AND DISENGAGEMENT DRIVE SYSTEMS - A drive system may provide centrifugally driven clutch members into engagement and disengagement using weights between an interface of the clutch members. The weights maybe disposed in races between the clutch members. The weights may move centrifugally within the races pushing the clutch members apart during rotation of an input drive shaft. In some embodiments, two clutch members may provide the engagement and disengagement of the input drive shaft power to a drive output member and a third clutch member may be configured to engage the two cutch members during drive engagement. The third clutch member may be configured to disengage from the two clutch members as a failsafe during, for example, an overspeed condition or a jammed clutch interface. | 02-12-2015 |
Patent application number | Description | Published |
20080289515 | PEPPER DE-STEMMING - A way of dealing with challenges to the pepper processing industry and pepper growers is to mechanize pepper processing, including the de-stemming of whole peppers. The present example provides a method of or mechanically de-stemming whole peppers. The method provides for the recognition of a pepper's shoulder in order to generate a control signal to initiate a process to de-stem the pepper. In particular, several implementations of the method are provided that may include a mechanical system, a laser system, a machine vision system, a combination of a machine vision system and the laser system, and other equivalent implementations. Additionally disclosed, are methods of processing whole peppers utilizing automated de-stemming. | 11-27-2008 |
20090022865 | PEPPER BOAT MAKER - The present example provides an automated or mechanized, way of making a pepper boat from a de-stemmed pepper. In making the pepper boat, de-stemmed peppers may be split by a splitting assembly. As the pepper is split, or subsequently, a whisk assembly tends to clean a portion of the veins and seeds from the split pepper pod to form two substantially equal halves of a pepper boat, suitable for further food processing. | 01-22-2009 |
20120294991 | PEPPER DE-STEMMING METHODS AND APPARATUS - A way of dealing with challenges to the pepper processing industry and pepper growers is to mechanize pepper processing, including the de-stemming of whole peppers. The present example provides a method for mechanically de-stemming whole peppers. The method provides for the recognition of a pepper's shoulder and or interior regions and stem in order to generate a control signal to initiate a process to de-stem the pepper. In particular, several implementations of the method are provided that may include a mechanical system, a laser system, a machine vision system, a combination of a machine vision system and the laser system, and other equivalent implementations. Additionally disclosed, are methods of processing whole peppers utilizing automated de-stemming. | 11-22-2012 |
20130302482 | PEPPER DE-STEMMING METHODS AND APPARATUS - A way of dealing with challenges to the pepper processing industry and pepper growers is to mechanize pepper processing, including the de-stemming of whole peppers. The present example provides a method for mechanically de-stemming whole peppers. The method provides for the recognition of a pepper's shoulder and or interior regions and stem in order to generate a control signal to initiate a process to de-stem the pepper. In particular, several implementations of the method are provided that may include a mechanical system, a laser system, a machine vision system, a combination of a machine vision system and the laser system, and other equivalent implementations. Additionally disclosed, are methods of processing whole peppers utilizing automated de-stemming. | 11-14-2013 |