Klersy
Hans-Berth Klersy, Wiesbaden DE
Patent application number | Description | Published |
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20100088975 | METHOD OF PRODUCING A HEAVY MODULAR UNIT AND A MODULAR UNIT PRODUCED ACCORDING TO THE METHOD - The present invention encompasses a method, on a building site, of forming a stable and, in terms of weight, heavy modular unit under the utilisation of prefabricated, in terms of weight considerably lighter, modular unit ( | 04-15-2010 |
20100146872 | Process of combining two modular units with one another, and a thus combined house body - The present invention encompasses a process for initially combining and thereafter uniting two or more modular units (1A, 1B, 1C) to one another in order thus combined to be able to form a house body (1), for instance a cellar-adapted house body. A liquid-resistant layer is advantageously wholly or partly to be able to cover a base slab and in any event lower wall sections allocated to the wall portion, proximal the base slab, in order principally to prevent damp permeation. A first modular unit (1B), with in any event a first open wall portion, is placed on a substrate prepared within a building site, a second modular unit (1C), with in any event a second open wall portion, is placed on said substrate prepared within the building site, so that an open wall portion allocated to the first modular unit (1B) will connect to an open wall portion allocated to the second modular unit (1C). The base slab of the one modular unit (1B) and the base slab of the second module (1C) form a free space (10, 20) defined by the mutually facing edge extents of the base slabs. The base slab of the one modular unit (1B) is connected, with the aid of tractive force absorbing means, to the base slab of the second module (1C) over said free space (10, 20) and that the free space is filled with concrete or the like. The present invention also encompasses a house body thud produced. | 06-17-2010 |
Patrick Klersy, Lake Orion, MI US
Patent application number | Description | Published |
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20080220560 | Programmable resistance memory element and method for making same - A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material. | 09-11-2008 |
20090057645 | Memory element with improved contacts - A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material. | 03-05-2009 |
20110114911 | Programmable Resistance Memory Element and Method for Making Same - A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material. | 05-19-2011 |
Patrick Klersy, Ortonville, MI US
Patent application number | Description | Published |
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20120040492 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 02-16-2012 |
20120040493 | PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 02-16-2012 |
20120040518 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 02-16-2012 |
20120115274 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 05-10-2012 |