Patent application number | Description | Published |
20100062581 | METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE - Provided is a method of fabricating a non-volatile semiconductor device. The method includes: forming a first hard mask layer over a substrate; etching the first hard mask layer and the substrate to form a plurality of isolation trenches extending in parallel to one another in a first direction; burying a dielectric layer in the isolation trenches to form a isolation layer; forming a plurality of floating gate mask patterns extending in parallel to one another in a second direction intersecting with the first direction over a resulting structure where the isolation layer is formed; etching the first hard mask layer by using the floating gate mask patterns as an etch barrier to form a plurality of island-shaped floating gate electrode trenches; and burying a conductive layer in the floating gate electrode trenches to form a plurality of island-shaped floating gate electrodes. | 03-11-2010 |
20140269039 | ELECTRONIC DEVICE AND VARIABLE RESISTANCE ELEMENT - A variable resistance element includes: first and second magnetic layers having a lanthanide series element alloyed in a nickel-iron compound; and a tunnel barrier layer interposed between the first and second magnetic layers. | 09-18-2014 |
20140281231 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to an electronic device and a method for fabricating the same. An electronic device in accordance with this technology includes semiconductor memory. The semiconductor memory may include a magnetization-pinned layer configured to include a first magnetic layer, a second magnetic layer, and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, a free magnetization layer spaced apart from the magnetization-pinned layer, a tunnel barrier layer interposed between the magnetization-pinned layer and the free magnetization layer, and a magnetic spacer configured to come in contact with a side of the first magnetic layer and at least part of a side of the second magnetic layer. | 09-18-2014 |
20140299950 | ELECTRONIC DEVICES HAVING SEMICONDUCTOR MEMORY UNITS - Disclosed are electronic devices comprising a semiconductor memory unit capable of reducing the switching current of a variable resistance element for switching between different resistance states. One implementation of a disclosed electronic device may include a first magnetic layer having an easy magnetization axis in a first direction and having a variable magnetization direction, a third magnetic layer having a magnetization direction pinned in the first direction, a second magnetic layer interposed between the first magnetic layer and the third magnetic layer, and having a magnetization direction pinned in a second direction different from the first direction, a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, and a non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. | 10-09-2014 |
20150052302 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - The disclosed technology provides an electronic device and a fabrication method thereof, in which an etching margin in formation of a variable resistance element is secured and process difficulty is reduced. An electronic device according to an implementation includes a semiconductor memory, the semiconductor memory including: a variable resistance element including a stack of a first magnetic layer, a tunnel barrier layer and a second magnetic layer; a contact plug coupling a top of the variable resistance element and including a magnetism correcting layer; and a conductive line coupled to the variable resistance element through the contact plug including the magnetism correcting layer. | 02-19-2015 |
20150092480 | ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer. | 04-02-2015 |
20150249110 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory that includes: an inter-layer dielectric layer which is formed over a substrate; a contact plug which is coupled with the substrate by passing through the inter-layer dielectric layer and has a protruding portion over the inter-layer dielectric layer; a first variable resistance pattern which is formed over the contact plug; and a protective layer which covers the first variable resistance pattern and a portion of sidewalls of the contact plug in such a manner that the sidewalls of the contact plug are exposed. | 09-03-2015 |
20160079524 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory that includes: a variable resistance element formed over a substrate; and a carbon-containing aluminum nitride layer formed on sidewalls and in an upper portion of the variable resistance element. | 03-17-2016 |