Patent application number | Description | Published |
20080283487 | PROCESS FOR PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND THE THREE-DIMENSIONAL PHOTONIC CRYSTAL - A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material. | 11-20-2008 |
20080283493 | METHOD FOR FORMING ETCHING MASK, METHOD FOR FABRICATING THREE-DIMENSIONAL STRUCTURE AND METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTALLINE LASER DEVICE - A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes. | 11-20-2008 |
20080286892 | METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTAL - A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface. | 11-20-2008 |
20080298744 | PHOTONIC CRYSTAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction. | 12-04-2008 |
20090052486 | LASER APPARATUS AND PRODUCTION METHOD OF LASER APPARATUS - Provided are a laser apparatus into which a large current can be injected and a production method which enables easy production of the apparatus. A laser apparatus includes a light-emitting region on a substrate, and a periodic refractive index structure containing an i-type material provided at a periphery of the light-emitting region. Another laser apparatus includes a light-emitting region between a first electrode and a second electrode on a substrate, wherein at least one of the first and the second electrodes includes a periodic refractive index structure. | 02-26-2009 |
20090315153 | NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE - To provide a method of manufacturing a nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed. | 12-24-2009 |
20100260228 | METHOD OF PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND OPTICAL FUNCTIONAL DEVICE - A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction. | 10-14-2010 |
20110027998 | Method of Manufacturing A Nano Structure By Etching, Using A Substrate Containing Silicon - A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width. | 02-03-2011 |
20110042718 | NITRIDE SEMICONDUCTOR LAYER-CONTAINING STRUCTURE, NITRIDE SEMICONDUCTOR LAYER-CONTAINING COMPOSITE SUBSTRATE AND PRODUCTION METHODS OF THESE - A nitride semiconductor layer-containing structure having a configuration in which: the structure includes a laminated structure based on at least two nitride semiconductor layers; the structure includes between the two nitride semiconductor layers in the laminated structure a plurality of voids surrounded by the faces of the walls inclusive of the inner walls of the recessed portions of the asperity pattern formed on the nitride semiconductor layer that is the lower layer of the two nitride semiconductor layers; and crystallinity defect-containing portions to suppress the lateral growth of the nitride semiconductor layer are formed on at least part of the inner walls of the recessed portions to form the voids. | 02-24-2011 |
20110073968 | ELEMENT ARRAY, ELECTROMECHANICAL CONVERSION DEVICE, AND PROCESS FOR PRODUCING THE SAME - An element array comprises a plurality of elements having a first electrode and a second electrode with a gap therebetween; the first electrode being separated for each of the elements by grooves, an insulating connection substrate being bonded to the first electrode, and a wiring being made from each of the respective first electrodes separated for each of the elements through the connection substrate to the side opposite to the first electrodes. | 03-31-2011 |
20130256817 | ELEMENT ARRAY, ELECTROMECHANICAL CONVERSION DEVICE, AND PROCESS FOR PRODUCING THE SAME - An element array comprises a plurality of elements having a first electrode and a second electrode with a gap therebetween; the first electrode is separated for each of the elements by grooves, an insulating connection substrate is bonded to the first electrode, and wirings are provided from the respective first electrodes through the connection substrate to the side opposite to the first electrodes. | 10-03-2013 |
20140125950 | ACTUATOR, DEFORMABLE MIRROR, ADAPTIVE OPTICS SYSTEM USING THE DEFORMABLE MIRROR, AND SCANNING LASER OPHTHALMOSCOPE USING THE ADAPTIVE OPTICS SYSTEM - Provided is an actuator including a substrate, a movable portion provided so as to be movable with respect to the substrate, at least three elastic bodies for supporting the movable portion to the substrate in a displaceable manner, a movable comb electrode supported by the movable portion and extending in a direction parallel to a surface of the substrate, and a fixed comb electrode supported by the substrate and extending in the direction parallel to the surface of the substrate in which the movable comb electrode and the fixed comb electrode are arranged so as to be alternately engaged with each other with a distance, and each of all of the elastic bodies has a long axis that forms an angle of more than 90° and 180° or less with respect to at least one of the other elastic bodies. | 05-08-2014 |
20140126034 | VARIABLE SHAPE MIRROR AND METHOD OF MANUFACTURING THE SAME - In the method of manufacturing a micro structure including a membrane in a first substrate, a movable portion, a movable comb electrode, a suppressing unit, a support portion, and a fixed comb electrode are formed, and the movable portion of the first substrate and a second substrate are bonded. Then, the bonded second substrate is processed to form a membrane such as a reflecting portion. The movable comb electrode is supported by the movable portion and extends in a direction parallel to the membrane surface. The suppressing unit suppresses displacement of the movable comb electrode and the movable portion in a direction other than a direction normal to the membrane surface. The fixed comb electrode is supported by the support portion and extends in the direction parallel to the membrane surface. The fixed comb electrode is alternately arranged with respect to the movable comb electrode with a gap therebetween. | 05-08-2014 |
20140132917 | ELECTROSTATIC COMB ACTUATOR, DEFORMABLE MIRROR USING THE ELECTROSTATIC COMB ACTUATOR, ADAPTIVE OPTICS SYSTEM USING THE DEFORMABLE MIRROR, AND SCANNING LASER OPHTHALMOSCOPE USING THE ADAPTIVE OPTICS SYSTEM - Provided is an actuator formed in a substrate including a handle layer, an elastic body layer, and an insulating layer, the actuator including a movable portion supported to a support portion by an elastic body, a movable comb electrode formed on the movable portion, a fixed comb electrode supported by the support portion, and electrode wirings connected to the respective comb electrodes in which the elastic body supports the movable portion such that the movable portion is displaceable in a direction perpendicular to the substrate in accordance with voltages applied to the comb electrodes; the comb electrodes are made up of the handle layer, and the elastic body is made up of the elastic body layer; and a handle layer separation groove is provided to electrically separate between the handle layers of the support portions supporting the comb electrodes, and a structure reinforcing portion is formed across the separation groove. | 05-15-2014 |
20140232984 | DEFORMABLE MIRROR AND METHOD FOR MANUFACTURING THE SAME - A deformable mirror includes a mirror substrate having a continuous reflective surface and a plurality of actuators connected to the mirror substrate at a plurality of coupling portions. In the deformable mirror, the mirror substrate has first regions and a second region thicker than the first regions and the first regions are formed around the coupling portions. | 08-21-2014 |