Patent application number | Description | Published |
20100081559 | FERROELECTRIC CERAMIC MATERIAL - Provided is a ferroelectric ceramic material containing BaTiO | 04-01-2010 |
20100155646 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material in which the product of the piezoelectric constant and the Young's modulus is large to give excellent piezoelectricity without using lead. A piezoelectric material including a perovskite type crystal represented by a compositional formula of ABO | 06-24-2010 |
20100155647 | OXYNITRIDE PIEZOELECTRIC MATERIAL AND METHOD OF PRODUCING THE SAME - Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): | 06-24-2010 |
20100208412 | FERROELECTRIC MATERIAL, METHOD OF PRODUCING FERROELECTRIC MATERIAL, AND FERROELECTRIC DEVICE - Provided are a ferroelectric material having good ferroelectricity and good insulation property, and a ferroelectric device using the ferroelectric material. In the present invention, the ferroelectric material includes a metal oxide having a perovskite-type crystal structure, in which: the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese. | 08-19-2010 |
20100231095 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE - Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 09-16-2010 |
20110221302 | BISMUTH IRON OXIDE POWDER, MANUFACTURING METHOD FOR THE BISMUTH IRON OXIDE POWDER, DIELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure. | 09-15-2011 |
20110298336 | CERAMIC, PIEZOELECTRIC DEVICE, AND PRODUCTION METHOD THEREOF - To provide a piezoelectric ceramic containing BiFeO | 12-08-2011 |
20130125359 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE - Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 05-23-2013 |
20140178290 | BISMUTH IRON OXIDE POWDER, MANUFACTURING METHOD FOR THE BISMUTH IRON OXIDE POWDER, DIELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure. | 06-26-2014 |