Patent application number | Description | Published |
20090302715 | PIEZOELECTRIC THIN FILM ELEMENTAL DEVICE - A piezoelectric thin film elemental device has a lower electrode, a piezoelectric thin film, and an upper electrode. The piezoelectric thin film has a thin film of a perovskite structure, expressed by a compositional formula (K | 12-10-2009 |
20100314972 | PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME - A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (Na | 12-16-2010 |
20100320871 | PIEZOELECTRIC THIN FILM ELEMENT AND MANUFACTURING METHOD OF THE PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (Na | 12-23-2010 |
20100320874 | PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - To provide A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (Na | 12-23-2010 |
20110006643 | PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K | 01-13-2011 |
20110121690 | PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K | 05-26-2011 |
20110175488 | PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K | 07-21-2011 |
20110187237 | PIEZOELECTRIC FILM ELEMENT, AND MANUFACTURING METHOD OF THE SAME AND PIEZOELECTRIC FILM DEVICE - A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less. | 08-04-2011 |
20130015392 | PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME, PIEZOELECTRIC FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC FILM DEVICEAANM SUENAGA; KazufumiAACI Tsuchiura-shiAACO JPAAGP SUENAGA; Kazufumi Tsuchiura-shi JPAANM Shibata; KenjiAACI Tsukuba-shiAACO JPAAGP Shibata; Kenji Tsukuba-shi JPAANM Watanabe; KazutoshiAACI Tsuchiura-shiAACO JPAAGP Watanabe; Kazutoshi Tsuchiura-shi JPAANM Nomoto; AkiraAACI Kasumigaura-shiAACO JPAAGP Nomoto; Akira Kasumigaura-shi JPAANM Horikiri; FumimasaAACI Nagareyama-shiAACO JPAAGP Horikiri; Fumimasa Nagareyama-shi JP - There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (Na | 01-17-2013 |
20130106242 | PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC FILM DEVICE | 05-02-2013 |
Patent application number | Description | Published |
20090191431 | METHOD OF MANUFACTURING CATALYST CARRIER, CATALYST CARRIER, AND ELECTRODE OF FUEL CELL BATTERY - To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramics powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal. | 07-30-2009 |
20100267796 | THERAPEUTIC AGENT FOR IRRITABLE BOWEL SYNDROME - The present invention provides a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a compound having an adenosine uptake inhibitory activity, a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a tricyclic compound represented by formula (I) | 10-21-2010 |
20120276090 | GENE RECOMBINANT ANTIBODY AND ANTIBODY FRAGMENT THEREOF - A recombinant antibody or the antibody fragment thereof which specifically reacts with an extracellular domain of human CCR4; a DNA which encodes the recombinant antibody or the antibody fragment thereof; a method for producing the recombinant antibody or the antibody fragment thereof; a method for immunologically detecting CCR4, a method for immunologically detecting a cell which expressed CCR4 on the cell surface, a method for depleting a cell which expresses CCR4 on the cell surface, and a method for inhibiting production of Th2 cytokine, which comprise using the recombinant antibody according or antibody fragment thereof; a therapeutic or diagnostic agent for Th2-mediated immune diseases; and a therapeutic or diagnostic agent for a blood cancer. | 11-01-2012 |
20130009519 | PIEZOELECTRIC THIN-FILM ELEMENT AND PIEZOELECTRIC THIN-FILM DEVICE - There is provided a piezoelectric thin film element, comprising: a substrate | 01-10-2013 |
20130249354 | PIEZOELECTRIC FILM-ATTACHED SUBSTRATE, PIEZOELECTRIC FILM ELEMENT AND METHOD OF MANUFACTURING THE SAME - There is provided a piezoelectric film-attached substrate, including a piezoelectric film having a specific thickness, wherein a reflection spectrum shows a relation between a light obtained in such a way that the surface of the piezoelectric film is irradiated with an irradiation light having a specific wavelength and the irradiation light is reflected on the surface of the piezoelectric film, and a light obtained in such a way that the irradiation light is transmitted through the piezoelectric film and is reflected on the surface of the lower electrode, which is the reflection spectrum at least at one point on a center part and an outer peripheral part of the piezoelectric film, and such a reflection spectrum has at least one of the maximum value and the minimum value respectively, wherein the reflectance at least in one maximum value is 0.4 or more. | 09-26-2013 |
Patent application number | Description | Published |
20090150635 | COMMAND CONTROL FOR SYNCHRONOUS MEMORY DEVICE - Systems, methods, and circuits for command control for synchronous memory device are disclosed. In one embodiment, a memory device comprises a first synchronous memory controlled by a second group of commands which includes a first command receiving section for receiving a first group of commands, and a second command receiving section for receiving a command that is unique to the first synchronous memory and different from the first group of commands during execution of the first group of commands received by the first command receiving section. The synchronous memory further comprises a second synchronous memory controlled by the first group of commands, where the first synchronous memory and the second synchronous memory are coupled to a same data bus, and where the second group of commands is different from the first group of commands. | 06-11-2009 |
20090150701 | SHADOW WRITE AND TRANSFER SCHEMES FOR MEMORY DEVICES - Systems and methods for controlling memory devices are disclosed. In one embodiment, a memory system comprises a memory controller for forwarding a command signal and an address signal and for receiving and forwarding a data signal, and a first memory device for receiving the command signal and the address signal from the memory controller, where the first memory device comprises a first command judging circuit for receiving and forwarding the data signal and for decoding the command signal. The memory system further comprises a second memory device for receiving the command signal and the address signal from the memory controller, where the second memory device comprises a second command judging circuit for receiving and generating the data signal and for decoding the command signal. The command signal, the address signal and the data signal are commonly connected to the first memory device and the second memory device. | 06-11-2009 |
20110173379 | SEMICONDUCTOR DEVICE WITH DOUBLE PROGRAM PROHIBITION CONTROL - The present invention provides a semiconductor device and a method for controlling the semiconductor device, the semiconductor device including memory regions; program prohibition information units storing program prohibition information to be used for determining whether to prohibit or allow programming in the memory regions corresponding to the program prohibition information units; a first prohibition information control circuit that prohibits a change of the program prohibition information from a program prohibiting state with respect to a memory region based on first prohibition information; and a second prohibition information control circuit that prohibits a change of the program prohibition information from a program allowing state to a program prohibiting state with respect to the corresponding memory region based on second prohibition information with respect to the corresponding memory region. | 07-14-2011 |