Patent application number | Description | Published |
20080219045 | Semiconductor memory device and magneto-logic circuit - Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer. | 09-11-2008 |
20090122596 | Semconductor memory device and method of programming the same - Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation. | 05-14-2009 |
20090278218 | Magnetoresistive element - A magnetoresistive element is disclosed, wherein the magnetoresistive element is composed of a synthetic anti-ferromagnetic (SAF) structure that may include a first pinned layer, an intermediate layer, and a second pinned layer; and a Cr layer between the first pinned layer and the intermediate layer and/or the second pinned layer and the intermediate layer. | 11-12-2009 |
20100008130 | Method of operating magnetic random access memory device - Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure. | 01-14-2010 |
20110122709 | Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit - A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell. | 05-26-2011 |
20110141803 | Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same - Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material. | 06-16-2011 |
20110149647 | Perpendicular magnetic tunnel junctions, magnetic devices including the same and method of manufacturing a perpendicular magnetic tunnel junction - Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer. | 06-23-2011 |
20120038428 | Oscillators and method of operating the same - Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied. | 02-16-2012 |
20120038430 | OSCILLATORS AND METHODS OF OPERATING THE SAME - Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers. | 02-16-2012 |
20120056685 | Oscillators And Methods Of Operating The Same - An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer. | 03-08-2012 |
20120068779 | Oscillators and methods of manufacturing and operating the same - Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession. | 03-22-2012 |
20120126904 | Oscillators And Methods Of Manufacturing And Operating The Same - Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer. | 05-24-2012 |
20120139069 | STORAGE NODES, MAGNETIC MEMORY DEVICES, AND METHODS OF MANUFACTURING THE SAME - A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed. | 06-07-2012 |
20130055473 | DEVICE AND METHOD FOR DIFFERENTIATING TARGET CELL - A device for differentiating a target cell includes a cantilever including a fixed end and a free end, where the cantilever is elastically deformable, a tip disposed on the free end of the cantilever, where the tip contacts a surface of a cell, a measurement unit connected to the fixed end of the cantilever, where the measurement unit measures a degree of a repulsive force based on an elastic deformation of the cantilever, and a conversion unit which converts the repulsive force measured by the measurement unit into a modulus of elasticity derived from the surface of the cell. | 02-28-2013 |
20130140657 | MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE - Magnetic memory devices including a free magnetic layer having a three-dimensional structure, include a switching device and a magnetic tunnel junction (MTJ) cell connected thereto. The MTJ cell includes a lower magnetic layer, a tunnel barrier layer, and a free magnetic layer, which are sequentially stacked. A portion of the free magnetic layer protrudes in a direction away from an upper surface of the tunnel barrier layer. | 06-06-2013 |
20130161769 | MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME - Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer. | 06-27-2013 |
20130307098 | MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME - Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding element protruding from the free layer and having a changeable magnetization direction. The free layer has a changeable magnetization direction. The protruding element is shaped in the form of a tube. The protruding element includes a first protruding portion and a second protruding portion protruding from ends of the free layer facing in different directions. | 11-21-2013 |
20130343118 | MAGNETIC MEMORY DEVICES AND METHODS OF OPERATING THE SAME - Magnetic memory devices, and methods of operating the same, include a magnetoresistive element including a free layer, a pinned layer, and a separation layer between the free layer and the pinned layer. The devices, and methods, further include a first conductive line connected to the free layer and configured to apply a Rashba field to, or induce the Rashba field in, the free layer, and a second conductive line spaced apart from the free layer and configured to apply an external magnetic field to the free layer. A magnetization direction of the free layer is switchable by application of the Rashba field and the external magnetic field to the free layer. | 12-26-2013 |
20140015073 | THERMALLY STABLE MAGNETIC TUNNEL JUNCTION CELL AND MEMORY DEVICE INCLUDING THE SAME - A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned layer, and a free layer on the separation layer and having a variable magnetization direction. The pinned layer and the free layer include a magnetic material having Perpendicular Magnetic Anisotropy (PMA). The free layer may include a central part and a marginal part on a periphery of the central part. The free layer is shaped in the form of a protrusion in which the central part is thicker than the marginal part. | 01-16-2014 |
20140119106 | MAGNETIC MEMORY DEVICES AND METHODS OF OPERATING THE SAME - Magnetic memory devices, and methods of operating the same, include a magnetoresistive element, a current apply element for applying a spin transfer torque switching current to the magnetoresistive element, and a magnetic field apply element for applying a non-perpendicular magnetic field to the magnetoresistive element. The magnetic memory device writes data in the magnetoresistive element by using the spin transfer torque switching current and the non-perpendicular magnetic field. The magnetoresistive element includes a free layer and a pinned layer each having a perpendicular magnetic anisotropy. | 05-01-2014 |
20140211552 | MEMORY DEVICE USING SPIN HALL EFFECT AND METHODS OF MANUFACTURING AND OPERATING THE MEMORY DEVICE - A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line. | 07-31-2014 |
20140231941 | MAGNETORESISTIVE STRUCTURES, MEMORY DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURES AND THE MEMORY DEVICES - Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned layer opposing the plurality of free layers. The separation layer is between the at least one pinned layer and the plurality of free layers. The at least one pinned layer has a magnetization direction that is fixed. | 08-21-2014 |
20140252519 | MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE - Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer. | 09-11-2014 |
20140269036 | MAGNETIC MEMORY DEVICES AND METHODS OF WRITING DATA TO THE SAME - Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell. | 09-18-2014 |
20140339660 | MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE INCLUDING THE SAME - Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature. | 11-20-2014 |