Patent application number | Description | Published |
20100053579 | METHOD AND SYSTEM FOR MANUFACTURING A RETICLE USING CHARACTER PROJECTION PARTICLE BEAM LITHOGRAPHY - A method for manufacturing a surface, the surface having a multiplicity of slightly different patterns, is disclosed with the method comprising the steps of designing a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. A system for manufacturing a surface is also disclosed. | 03-04-2010 |
20100055619 | METHOD AND SYSTEM FOR MANUFACTURING A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY - A method for manufacturing a surface, the surface having a multiplicity of slightly different patterns, is disclosed with the method comprising the steps of designing a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. A system for manufacturing a surface is also disclosed. | 03-04-2010 |
20100058281 | METHOD FOR OPTICAL PROXIMITY CORRECTION OF A RETICLE TO BE MANUFACTURED USING CHARACTER PROJECTION LITHOGRAPHY - A method for optical proximity correction of a design of a pattern on a surface is disclosed with the method comprising the steps of inputting desired patterns for the substrate and inputting a set of characters some of which are complex characters that may be used for forming the patterns on the surface. A method of creating glyphs is also disclosed. | 03-04-2010 |
20100058282 | METHOD AND SYSTEM FOR DESIGN OF A RETICLE TO BE MANUFACTURED USING CHARACTER PROJECTION LITHOGRAPHY - A method for fracturing or mask data preparation or proximity effect correction is disclosed which comprises the steps of inputting patterns to be formed on a surface, a subset of the patterns being slightly different variations of each other and selecting a set of characters some of which are complex characters to be used to form the number of patterns, and reducing shot count or total write time by use of a character varying technique. A system for fracturing or mask data preparation or proximity effect correction is also disclosed. | 03-04-2010 |
20110053093 | METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH VARIABLE BEAM BLUR - A charged particle beam writer system is disclosed comprising a generator for a charged particle beam having a beam blur radius, wherein the beam blur radius may be varied from shot to shot, or between two or more groups of shots. A method for fracturing or mask data preparation or optical proximity correction is also disclosed comprising assigning a beam blur radius variation to each calculated charged particle beam writer shot. A method for forming a pattern on a surface is also disclosed comprising using a charged particle beam writer system and varying the beam blur radius from shot to shot. A method for manufacturing an integrated circuit using optical lithography is also disclosed, comprising using a charged particle beam writer system to form a pattern on a reticle, and varying the beam blur radius of the charged particle beam writer system from shot to shot. | 03-03-2011 |
20120096412 | Method and System for Forming High Accuracy Patterns Using Charged Particle Beam Lithography - A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface. | 04-19-2012 |
20120221980 | METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY - A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface. | 08-30-2012 |
20120221981 | METHOD AND SYSTEM FOR DESIGN OF ENHANCED EDGE SLOPE PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY - A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface. | 08-30-2012 |
20130252143 | METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY - A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface. | 09-26-2013 |
20140129996 | METHOD AND SYSTEM FOR DIMENSIONAL UNIFORMITY USING CHARGED PARTICLE BEAM LITHOGRAPHY - A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is modified to lower the calculated sensitivity. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a resist-coated reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle. | 05-08-2014 |
20140129997 | METHOD AND SYSTEM FOR DIMENSIONAL UNIFORMITY USING CHARGED PARTICLE BEAM LITHOGRAPHY - A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern. | 05-08-2014 |
20140223393 | Method and System for Forming High Accuracy Patterns Using Charged Particle Beam Lithography - A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed. | 08-07-2014 |
20140272675 | METHOD AND SYSTEM FOR FORMING A DIAGONAL PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY - A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed. | 09-18-2014 |
20140282304 | METHOD AND SYSTEM FOR FORMING A DIAGONAL PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY - A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. A pattern determined by the transition region shots is then compared to a reticle pattern created using conventional non-overlapping VSB shots. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed. | 09-18-2014 |
20140359542 | METHOD AND SYSTEM FOR DIMENSIONAL UNIFORMITY USING CHARGED PARTICLE BEAM LITHOGRAPHY - A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern. | 12-04-2014 |