Patent application number | Description | Published |
20140035046 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode. | 02-06-2014 |
20140091397 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THEREOF - It is therefore an object of the present invention to provide a method in which, in a semiconductor integrated circuit device, a plurality of transistors having wide-rangingly different I | 04-03-2014 |
20140306292 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A first transistor includes a first impurity layer of a first conduction type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, a first gate electrode formed above the first gate insulating film, and first source/drain regions of a second conduction type formed in the first epitaxial semiconductor layer and in the semiconductor substrate in the first region. A second transistor includes a second impurity layer of the first conduction type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and being thinner than the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer, a second gate electrode formed above the second gate insulating film, and second source/drain regions of the second conduction type formed in the second epitaxial semiconductor layer and in the semiconductor substrate in the second region. | 10-16-2014 |
20140308783 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A first transistor includes a first impurity layer of a first conduction type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, a first gate electrode formed above the first gate insulating film, and first source/drain regions of a second conduction type formed in the first epitaxial semiconductor layer and in the semiconductor substrate in the first region. A second transistor includes a second impurity layer of the first conduction type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and being thinner than the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer, a second gate electrode formed above the second gate insulating film, and second source/drain regions of the second conduction type formed in the second epitaxial semiconductor layer and in the semiconductor substrate in the second region. | 10-16-2014 |
20140377921 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An impurity layer is formed in a first region of a semiconductor substrate, a silicon layer is grown on the semiconductor substrate, a tunnel gate insulating film is formed on a first silicon layer of a second region, a first conductor layer is formed on the tunnel gate insulating film, a first silicon oxide film and a silicon nitride film are formed on a second silicon layer, in a reduced pressure state, oxygen and hydrogen are independently introduced into an oxidation furnace to expose the silicon nitride film to active species of the oxygen and active species of the hydrogen to thereby oxidize the silicon nitride film to form a second silicon oxide film, a gate insulating film is formed on the silicon layer of the first region, a second conductor layer is formed on the second silicon oxide film and on the gate insulating film, the second conductor layer and the first conductor layer of the second region are patterned to form a stack gate of a nonvolatile memory transistor, and the second conductor layer above the first region is patterned to form a gate electrode of an MIS-type transistor. | 12-25-2014 |
20150021732 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, and being connected antiparallel with the Schottky barrier diode. | 01-22-2015 |
20150357330 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode. | 12-10-2015 |
20150364484 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes forming a silicon layer by epitaxial growth over a semiconductor substrate having a first area and a second area; forming a first gate oxide film by oxidizing the silicon layer; removing the first gate oxide film from the second area, while maintaining the first gate oxide film in the first area; thereafter, increasing a thickness of the first gate oxide film in the first area and simultaneously forming a second gate oxide film by oxidizing the silicon layer in the second area; and forming a first gate electrode and a second gate electrode over the first gate oxide film and the second gate oxide film, respectively, wherein after the formation of the first and second gate electrodes, the silicon layer in the first area is thicker than the silicon layer in the second area. | 12-17-2015 |