Patent application number | Description | Published |
20090050933 | SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device | 02-26-2009 |
20090160033 | SEMICONDUCTOR OPTICAL ELEMENT - A light receiving element | 06-25-2009 |
20100032839 | ELECTRODE STRUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Hb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-11-2010 |
20100200863 | ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THOSE - A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11. | 08-12-2010 |
20100279457 | METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-RECEIVING DEVICE - Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device | 11-04-2010 |
20100327385 | SEMICONDUCTOR LIGHT-RECEIVING ELEMENT - The Si waveguide | 12-30-2010 |
20120028456 | ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-02-2012 |
20140376930 | OPTICAL RECEIVER AND METHOD FOR CONTROLLING OPTICAL RECEIVEROPTICAL RECEIVER, METHOD FOR CONTROLLING OPTICAL RECEIVER, AND METHOD FOR RECEIVING LIGHT - In an optical receiver which is compatible with a plurality of signal channels, it is difficult to receive signals properly because a variation in receiving light sensitivity of a photoelectric conversion unit occurs between a plurality of signal channels, therefore, an optical receiver according to an exemplary aspect of the invention includes an optical processing circuit processing input signal light to have been input and outputting a plurality of output signal light beams; and a plurality of photoelectric conversion means for receiving the plurality of output signal light beams respectively and outputting electric signals, wherein the photoelectric conversion means includes an avalanche photodiode which can control a multiplication factor of an output current as the electric signal by means of an applied voltage; and the avalanche photodiode operates with a driving voltage by which the output currents in the plurality of photoelectric conversion means become almost the same. | 12-25-2014 |