Patent application number | Description | Published |
20080297714 | Active-Matrix Liquid Crystal Display - A display device includes first and second substrates with a liquid crystal layer therebetween, video signal lines and scan lines on one of the substrates, and display electrodes connected to a video signal line through an active device. Pixel areas are defined by the video signal and scan signal lines, and each pixel area has the display electrode, a reference electrode and the active device. Display electrodes are arranged on the first substrate and reference electrodes are arranged the second substrate. A part of the reference electrodes have a plurality layers and is conductive. A sealing material is formed between the substrates and along a periphery thereof and include conductive beads. A connecting terminal is formed from an edge of the first substrate to under the sealing material, and is connected electrically to the reference electrodes thorough the sealing material. | 12-04-2008 |
20080303998 | In-Plane Field Type Liquid Crystal Display Device Comprising Liquid Crystal Molecules With More Than Two Kinds Of Reorientation Directions - A liquid crystal display device includes a pair of substrates with a liquid crystal layer therebetween with a plurality of scanning signal lines and of video signal lines being formed on a first substrate. The scanning and video signal lines are arranged in a shape of a grid, and a pixel region is defined as a region surrounded by the scanning and video signal lines. A black matrix is formed on a second substrate, is arranged in a position overlapped on the scanning and video signal lines, and has an opening portion in each pixel region. A plurality of first electrodes are provided on the first substrate, and a plurality of second electrodes are provided on the second substrate, wherein at least one of first electrodes and at least one of the second electrodes are arranged in a position overlapped with the opening portion. | 12-11-2008 |
20090167997 | Liquid crystal display - An active matrix liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, and plural image signal lines and scan signal lines formed on the first substrate. Respective pixel regions are formed by adjacent image signal lines and adjacent scan signal lines and have at least an active device. A light shield layer is formed between the first substrate and at least one of the image signal lines and is elongated in a direction of extension of the at least one of the image signal lines. The light shield layer and the at least one of the scan signal lines are formed on a same layer on the first substrate. | 07-02-2009 |
20100103361 | In-Plane Field Type Liquid Crystal Display Device Comprising Liquid Crystal Molecules With More Than Two Kinds of Reorientation Directions - A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal material sandwiched therebetween, neighboring first, second, third and fourth regions arranged in a rectangular shape and in a clockwise direction, the first, second, third and fourth regions having a first pixel electrode, a second pixel electrode, a third pixel electrode and a fourth pixel electrode, respectively. The first pixel electrode and the third pixel electrode extend in a parallel direction to one another, and the second pixel electrode and the fourth pixel electrode extend in a parallel direction to one another. | 04-29-2010 |
20100195038 | Liquid Crystal Display Device - An active matrix liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, and plural image signal lines and scan signal lines formed on the first substrate. Respective pixel regions are formed by adjacent image signal lines and adjacent scan signal lines, and the respective pixel regions have at least one of a semiconductor layer, a pixel electrode, a counter electrode, and a source electrode which connects the semiconductor layer to the pixel electrode. The pixel electrode is formed between the source electrode and the first substrate. | 08-05-2010 |
20110228199 | In-Plane Field Type Liquid Crystal Display Device Comprising Liquid Crystal Molecules With More Than Two Kinds of Reorientation Directions - A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer sandwiched between the first and second substrates, and an orientation film formed on the first substrate. The orientation film has two orientation regions in a pixel, and the orientation regions are formed by polarized light. | 09-22-2011 |
20110234961 | In-Plane Field Type Liquid Crystal Display Device Comprising Liquid Crystal Molecules With More Than Two Kinds Of Reorientation Directions - A liquid crystal display device includes a first substrate, a second substrate, a first electrode and a second electrode formed on the first substrate, the second electrode being arranged at an upper layer with respect to the first electrode, a drain signal line and a gate signal line formed on the first substrate, and a liquid crystal layer driven by an electric field formed between the first electrode and the second electrode. The first electrode extends in parallel to the drain signal lien and the second electrode extends at a slanted direction to the drain signal line. | 09-29-2011 |
20120008076 | Liquid Crystal Display - An active matrix type liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, a plurality of pixel regions formed by image signal lines and scan signal lines, and a semiconductor layer, a pixel electrode, a counter electrode formed on the first substrate in a pixel region. The pixel electrode is arranged at level which is lower than a level of the semiconductor layer. | 01-12-2012 |
20120057113 | Liquid Crystal Display - An active matrix type liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, a plurality of pixel regions formed by image signal lines and scan signal lines, a semiconductor layer, a pixel electrode, a counter electrode formed on the first substrate in a pixel region, and a metal layer and a transparent conductive layer. The metal layer is completely covered by the transparent conductive layer when viewed in cross-section. | 03-08-2012 |
Patent application number | Description | Published |
20090196783 | Austenitic stainless steel welded joint and austenitic stainless steel welding material - An austenitic stainless steel welded joint, which comprises by mass %, C: 0.05 to 0.25%, Si: not more than 2%, Mn: 0.01 to 3%, P: 0.05 to 0.5%, S: not more than 0.03%, Cr: 15 to 30%, Ni: 6 to 55%, sol. Al: 0.001 to 0.1% and N: not more than 0.03%, with the balance being Fe and impurities, and satisfies the formula of (Cr+1.5×Si+2×P)/(Ni+0.31×Mn+22×C+14.2×N+5×P)≧1.388, has high creep strength, and moreover, is economical and excellent in weldability. Therefore, the said austenitic stainless steel welded joint can be widely applied as steel pipes, steel plates and so on in such fields where not only high-temperature strength and corrosion resistance but also weldability is required. Each element symbol in the above formula represents the content by mass percent of the element concerned. | 08-06-2009 |
20090232694 | Martensitic stainless steel for welded structures - A martensitic stainless steel for welded structures including by mass %, C: 0.001 to 0.05%, Si: 0.05 to 1%, Mn: 0.05 to 2%, P: 0.03% or less, REM: 0.0005 to 0.1%, Cr: 8 to 16%, Ni: 0.1 to 9% and sol. Al: 0.001 to 0.1%; and further including one or more elements selected from among Ti: 0.005 to 0.5%, Zr: 0.005 to 0.5%, Hf: 0.005 to 0.5%, V: 0.005 to 0.5% and Nb: 0.005 to 0.5%; and O: 0.005% or less, N: 0.1% or less, with the balance being Fe and impurities; and the P and REM content satisfies: P≦0.6×REM. This steel possesses excellent SCC (stress corrosion cracking) resistance in welded sections in Sweet environments. | 09-17-2009 |
20100034689 | AUSTENITIC STAINLESS STEEL - An austenitic stainless steel, which comprises by mass %, C: 0.04 to 0.18%, Si≦1.5%, Mn≦2.0%, Ni: 6 to 30%, Cr: 15 to 30%, N: 0.03 to 0.35%, sol. Al≦0.03% and further contains one or more elements selected from Nb≦1.0%, V≦0.5% and Ti≦0.5%, with the balance being Fe and impurities, and among the impurities P≦0.04%, S≦0.03%, Sn≦0.1%, As≦0.01%, Zn≦0.01%, Pb≦0.01% and Sb≦0.01%, and satisfy the conditions P1=S+{(P+Sn)/2}+{(As+Zn+Pb+Sb)/5}≦0.06 and 0.2≦P2=Nb+2(V+Ti)≦1.7−10×P1 has high strength and excellent resistance to cracking due to grain boundary embrittlement in the welded portion during the use at high temperatures. Therefore, the said steel can be suitably used as materials for constructing machines and equipment, such as power plant boilers, which are to be used at high temperatures for a long period of time. | 02-11-2010 |
20100062279 | Austenitic stainless steel welded joint and austenitic stainless steel welding material - An austenitic stainless steel welded joint, whose base metal and weld metal each comprises, by mass percent, C: not more than 0.3%, Si: not more than 2%, Mn: 0.01 to 3.0%, P: more than 0.04% to not more than 0.3%, S: not more than 0.03%, Cr: 12 to 30%, Ni: 6 to 55%, rare earth metal(s): more than 0.2% to not more than 0.6%, sol. Al: 0.001 to 3% and N: not more than 0.3%, with the balance being Fe and impurities, and satisfies the formula of (Cr+1.5×Si+2×P)/(Ni+0.31×Mn+22×C+14.2×N+5×P)<1.388, in spite of having a high P content and showing the fully austenitic solidification, has excellent resistance to the weld solidification cracking. Therefore, the said austenitic stainless steel welded joint can be widely used in such fields where a welding fabrication is required. Each element symbol in the above formula represents the content by mass percent of the element concerned. | 03-11-2010 |
20100086430 | HEAT RESISTANT FERRITIC STEEL - There is provided a heat resistant ferritic steel, excellent in the weld crack resistance of the HAZ and creep strength. A high-Cr heat resistant ferritic steel is characterized by consisting of, by mass %, Si: more than 0.1% and not more than 1.0%, Mn: 2.0% or less, Co: 1 to 8%, Cr: 7 to 13%, V: 0.05 to 0.4%, Nb: 0.01 to 0.09%, either one or both of Mo and W: 0.5 to 4% as a total, B: 0.005 to 0.025%, Al: 0.03% or less, and N: 0.003 to 0.06%, and containing C in an amount satisfying Expression (1), the balance being Fe and impurities, and O, P and S as impurities being such that O: 0.02% or less, P: 0.03% or less, and S: 0.02% or less, respectively, | 04-08-2010 |
20100136361 | WELDING MATERIAL AND WELDED JOINT STRUCTURE - A welding material, to be used for welding a base metal made of an austenitic alloy comprising C≦2.0%, Si≦4.0%, Mn: 0.01 to 3.0%, P: more than 0.03% to not more 0.3%, S≦0.03%, Cr: 12 to 35%, Ni: 6 to 80%, sol. Al: 0.001 to 1% and N≦0.3%, with the balance being Fe and impurities to a base metal made of another austenitic alloy, which comprises C: more than 0.3% to 3.0%, Si≦4.0%, Mn≦3.0%, P≦0.03%, S≦0.03%, Cr: more than 22% to 55%, Ni: more than 30% to not more than 70%, sol. Al: 0.001 to 1% and N≦0.3%, with the balance being Fe and impurities can suppress the weld solidification cracking which occurs in an austenitic alloy having a high P content and showing fully austenitic solidification. Therefore, the said welding material can be widely used in such fields where a welding fabrication is required. The said welding material may contain a specific amount or amounts of one or more elements selected from Cu, Mo, W, V, Nb, Ti, Ta, Zr, Hf, Co, B, Ca, Mg and REM. | 06-03-2010 |
20110200843 | WELDING MATERIAL AND WELDED JOINT STRUCTURE - A welding material, to be used for welding a base metal made of an austenitic alloy comprising C≦2.0%, Si≦4.0%, Mn: 0.01 to 3.0%, P: more than 0.03% to not more 0.3%, S≦0.03%, Cr: 12 to 35%, Ni: 6 to 80%, sol. Al: 0.001 to 1% and N≦0.3%, with the balance being Fe and impurities to a base metal made of another austenitic alloy, which comprises C: more than 0.3% to 3.0%, Si≦4.0%, Mn≦3.0%, P≦0.03%, S≦0.03%, Cr: more than 22% to 55%, Ni: more than 30% to not more than 70%, sol. Al: 0.001 to 1% and N≦0.3%, with the balance being Fe and impurities can suppress the weld solidification cracking which occurs in an austenitic alloy having a high P content and showing fully austenitic solidification. Therefore, the said welding material can be widely used in such fields where a welding fabrication is required. The said welding material may contain a specific amount or amounts of one or more elements selected from Cu, Mo, W, V, Nb, Ti, Ta, Zr, Hf, Co, B, Ca, Mg and REM. | 08-18-2011 |
20120141318 | AUSTENITIC STAINLESS STEEL - An austenitic stainless steel, which consists of by mass percent, C: not more than 0.02%, Si: not more than 1.5%, Mn: not more than 2%, Cr: 17 to 25%, Ni: 9 to 13%, Cu: more than 0.26% not more than 4%, N: 0.06 to 0.35%, sol. Al: 0.008 to 0.03%. One or more elements selected from Nb, Ti, V, TA, Hf, and Zr in controlled amounts can be included with the balance being Fe and impurities. P, S, Sn, As, Zn, Pb and Sb among the impurities are controlled as P: 0.006 to 0.04%, S: 0.0004 to 0.03%, Sn: 0.001 to 0.1%, As: not more than 0.01%, Zn: not more than 0.01%, Pb: not more than 0.01% and Sb: not more than 0.01%. The amounts of S, P, Sn, As, Zn, Pb and Sb and the amounts of Nb, Ta, Zr, Hf, and Ti are further controlled using formulas. | 06-07-2012 |
20120177529 | DUPLEX STAINLESS STEEL - A duplex stainless steel excellent in the weldability during large heat input welding and in the stress corrosion cracking resistance in a chloride environment containing corrosive associated gases has a chemical composition consisting, by mass %, of C: 0.03% or less, Si: 0.2 to 1%, Mn: 5.0% or less, P: 0.040% or less, S: 0.010% or less, sol. Al: 0.040% or less, Ni: 4 to 8%, Cr: 20 to 28%, Mo: 0.5 to 2.0%, Cu: more than 2.0% and 4.0% or less and N: 0.1 to 0.35%, and optionally contains one or more selected from among V, Ca, Mg, B and a rare earth metal(s), with the balance being Fe and impurities; wherein the duplex stainless steel satisfies the following formulas: | 07-12-2012 |
20120288400 | AUSTENITIC HEAT RESISTANT ALLOY - An austenitic heat resistant alloy consisting of, by mass percent, C: 0.15% or less, Si: 2% or less, Mn: 3% or less, Ni: 40 to 60%, Co: 0.03 to 25%, Cr: 15% or more and less than 28%, either one or both of Mo: 12% or less and W: less than 4%, the total content thereof being 0.1 to 12%, Nd: 0.001 to 0.1%, B: 0.0005 to 0.006%, N: 0.03% or less, O: 0.03% or less, at least one selected from Al: 3% or less, Ti: 3% or less, and Nb: 3% or less, the balance being Fe and impurities. The contents of P and S in the impurities being P: 0.03% or less and S: 0.01% or less. The alloy satisfies 1≦4×Al+2×Ti+Nb≦12 and P+0.2×Cr×B≦0.035, is excellent in weld crack resistance and toughness of HAZ, and is further excellent in creep strength at high temperatures. | 11-15-2012 |