Patent application number | Description | Published |
20100080032 | SEMICONDUCTOR DEVICE - A semiconductor device is provided in which two adjacent cell lines extending in a word line direction are connected by one word line. Additionally, A semiconductor device comprising: word lines; bit lines which are disposed to cross the word lines; a plurality of cell lines extending in a word line direction; and a word line provided to share one cell line and the other cell line, of a pair of cell lines comprising two adjacent cell lines, wherein a distance between two adjacent cell lines in the pair of cell lines is smaller than a distance between two adjacent cell lines between one pair of cell lines and the other pair of cell lines. | 04-01-2010 |
20100237407 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor memory device comprising a plurality of silicon pillars arranged in a matrix, whose sidewalls are provided with gate electrodes with gate insulating films interposed between the silicon pillars and the gate electrodes and whose top ends are electrically connected to memory elements, and a bit line and a word line provided between the silicon pillars so as to be orthogonal to each other. The bit line is electrically connected to a bottom end of the silicon pillars on both sides of the bit line in alternate rows, and the word line is electrically connected to a gate electrode formed on a sidewall of the silicon pillars on both sides of the word line in alternate columns. | 09-23-2010 |
20100314671 | Semiconductor device and method of forming the same - A semiconductor device includes a semiconductor substrate, and an extending semiconductor portion that extends vertically from the semiconductor substrate. The extending semiconductor portion has a side surface which comprises four main surfaces of {100} face and four sub-surfaces of {110} face. The four sub-surfaces are smaller in area than the four main surfaces. | 12-16-2010 |
20110012193 | SEMICONDUCTOR DEVICE HAVING VERTICAL TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM - A semiconductor device includes: a semiconductor substrate; a silicon pillar provided perpendicularly to a main surface of the semiconductor substrate; a gate dielectric film that covers a portion of a side surface of the silicon pillar; an insulator pillar that covers remaining portions of the side surface of the silicon pillar; a gate electrode that covers the silicon pillar via the gate dielectric film and the insulator pillar; an interlayer dielectric film provided above the silicon pillar, the gate dielectric film, the insulator pillar, and the gate electrode; and a gate contact plug embedded in a contact hole provided in the interlayer dielectric film, and in contact with the gate electrode and the insulator pillar. A film thickness of the insulator pillar in a lateral direction is thicker than a film thickness of the gate dielectric film in a lateral direction. | 01-20-2011 |
20110263099 | Manufacturing method of semiconductor device having vertical transistor - A method of manufacturing a semiconductor device includes forming a gate electrode material that covers a gate insulating film formed on each of side surfaces of first and second silicon pillars, wherein a film formation amount of the gate electrode material is controlled so that a first part with which the side surface of the first silicon pillar is covered via the gate insulating film does not contact with a second part with which the side surface of the second silicon pillar is covered via the gate insulating film. The method further includes: forming a mask insulating film that covers the first and second parts and fills a region between the first and second parts; and etching the gate electrode material using the mask insulating film as a mask, thereby forming gate electrodes with which the side surfaces of the first and second silicon pillars are covered via the gate insulating film, respectively and a conductive film electrically connecting the gate electrodes to each other. | 10-27-2011 |
20110266615 | SEMICONDUCTOR DEVICE - A semiconductor structure may include, but is not limited to: a semiconductor substrate; a first semiconductor structure extending upwardly over the semiconductor substrate; and a second semiconductor structure extending upwardly over the semiconductor substrate, the first and second semiconductor structures being aligned in a first < | 11-03-2011 |
20120001256 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first insulator pillar surrounding an active region; a second insulator pillar with a second side surface opposed in a y direction to a first side surface of the first insulator pillar on the active region side; an insulating film covering top surfaces of first and second insulator pillars; a second gate electrode electrically connected to the first gate electrode, covering at least the first and second side surfaces; and a gate contact plug in a contact hole and electrically connected to a top surface of the second gate electrode, the insulating film and the second gate electrode being exposed in a bottom of the contact hole. A distance between first and second side surfaces | 01-05-2012 |
20120032256 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a first island and a first electrode. The first island includes a first semiconductor region, a first insulation region, and a first insulating film. The first semiconductor region has first and second side surfaces adjacent to the first insulation region and the first insulating film, respectively. The first electrode is adjacent to the first insulation region and the first insulating film. The first insulating film is between the first electrode and the first semiconductor region. | 02-09-2012 |
20120193704 | SEMICONDUCTOR DEVICE HAVING VERTICAL TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM - A semiconductor device includes: a semiconductor substrate; a silicon pillar provided perpendicularly to a main surface of the semiconductor substrate; a gate dielectric film that covers a portion of a side surface of the silicon pillar; an insulator pillar that covers remaining portions of the side surface of the silicon pillar; a gate electrode that covers the silicon pillar via the gate dielectric film and the insulator pillar; an interlayer dielectric film provided above the silicon pillar, the gate dielectric film, the insulator pillar, and the gate electrode; and a gate contact plug embedded in a contact hole provided in the interlayer dielectric film, and in contact with the gate electrode and the insulator pillar. A film thickness of the insulator pillar in a lateral direction is thicker than a film thickness of the gate dielectric film in a lateral direction. | 08-02-2012 |
20120292504 | METHOD AND SYSTEM OF EVALUATING DISTRIBUTION OF LATTICE STRAIN ON CRYSTAL MATERIAL - A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample. | 11-22-2012 |
20140008535 | METHOD AND SYSTEM OF EVALUATING DISTRIBUTION OF LATTICE STRAIN ON CRYSTAL MATERIAL - A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample. | 01-09-2014 |
Patent application number | Description | Published |
20100140671 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon pillar | 06-10-2010 |
20100181614 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor pillar, an insulator, and an electrode. The semiconductor pillar has a semiconductor portion outwardly extending. The insulator extends along the semiconductor pillar. The insulator has an insulating portion outwardly extending along the semiconductor portion. The electrode extends along the insulator. The insulator is between the semiconductor pillar and the electrode. The electrode has an electrode portion overlapping the insulating portion in plain view. The electrode portion is under the insulating portion. | 07-22-2010 |
20120025286 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon pillar | 02-02-2012 |
20120161219 | SEMICONDUCTOR DEVICE - a semiconductor device is provided, which includes an N well having a peak concentration of 2E+17 atom/cm | 06-28-2012 |
20130023095 | METHOD OF MANUFACTURING DEVICE - A semiconductor pillar which has a first conductive type and protrudes from a semiconductor substrate, is formed. A bottom diffusion layer having a second conductive type is formed in the semiconductor substrate around a bottom of the semiconductor pillar. A gate insulator film which covers a side surface of the semiconductor pillar, is formed. A gate electrode which covers the gate insulator film, is formed. A top diffusion layer having the second conductive type is formed at a top portion of the semiconductor pillar. The top diffusion layer including a semiconductor body is formed by an epitaxial growth which contains an impurity. | 01-24-2013 |