Patent application number | Description | Published |
20100276688 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 11-04-2010 |
20100289020 | FIELD EFFECT TRANSISTOR USING OXIDE SEMICONDUTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): | 11-18-2010 |
20100295042 | FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE - A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas. | 11-25-2010 |
20110006297 | PATTERNED CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THIN FILM TRANSISTOR AND FIELD EFFECT TRANSISTOR - A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching. | 01-13-2011 |
20110168994 | SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.75 | 07-14-2011 |
20110177696 | SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures. | 07-21-2011 |
20110180392 | SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR, COMPRISING InGaO3(ZnO) CRYSTAL PHASE AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO | 07-28-2011 |
20110180763 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 07-28-2011 |
20110198586 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film. | 08-18-2011 |
20110240935 | SINTERED COMPLEX OXIDE AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In | 10-06-2011 |
20110240988 | FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SPUTTERING TARGET - A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %. | 10-06-2011 |
20110243835 | INDIUM OXIDE SINTERED COMPACT AND SPUTTERING TARGET - A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%. | 10-06-2011 |
20110260121 | COMPOSITE OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 μm or less, and a bulk resistance of 30 mΩcm or less, the number of tin oxide aggregate particles having a diameter of 10 μm or more being 2.5 or less per mm | 10-27-2011 |
20130140175 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 06-06-2013 |
20130146452 | FIELD EFFECT TRANSISTOR USING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): | 06-13-2013 |
20130313548 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 11-28-2013 |
20140167033 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 06-19-2014 |