Patent application number | Description | Published |
20080213099 | Ni-Fe BASED FORGING SUPERALLOY EXCELLENT IN HIGH-TEMPERATURE STRENGTH AND HIGH-TEMPERATURE DUCTILITY, METHOD OF MANUFACTURING THE SAME, AND STEAM TURBINE ROTOR - An Ni—Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.7 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby γ′ phase (Ni | 09-04-2008 |
20090068052 | Heat resisting steel, gas turbine using the steel, and components thereof - The invention is of a heat resisting martensitic steel comprising, by weight, 0.05 to 0.30% C, not more than 0.50% Si, not more than 0.60% Mn, 8.0 to 13.0% Cr, 0.5 to 3.0% Ni, 1.0 to 3.0% Mo, 0.1 to 1.5% W, 0.5 to 4% Co, 0.05 to 0.35% V, 0.02 to 0.30% in total of one or two elements selected from the group consisting of Nb and Ta, and 0.02 to 0.10% N, wherein a value of the square of a difference between the Ni amount and the Co amount, and the Ni amount are not more than values determined by a straight line drawn on a point A (1.0, 2.7%) and a point B (2.5, 1.0%) in the orthogonal coordinates shown in the attached drawing of FIG. | 03-12-2009 |
20100122754 | High-strength martensite heat resisting cast steel, method of producing the steel, and applications of the steel - A high-strength martensite heat resisting steel which has long-time creep rupture strength required for steam temperature condition of 600-630° C. and toughness at room temperature, and which is suitable for use as a material of a steam turbine rotor shaft and as large-sized forged steel with an improvement of hot forgeability. A method of producing the steel and applications of the steel are also provided. The high-strength martensite heat resisting steel contains 0.05-0.20% by mass of C, 0.1% or less of Si, 0.05-0.6% of Mn, 0.1-0.6% of Ni, 9.0-12.0% of Cr, 0.20-0.65% of Mo, 2.0-3.0% of W, 0.1-0.3% of V, 2.0% or less of Co, 0.02-0.20% of Nb, 0.015% or less of B, 0.01-0.10% of N, and 0.015% or less of Al, (W/Mo) being 4.0-10.0. | 05-20-2010 |
20100326969 | LASER NARROW GROOVE WELDING APPARATUS AND WELDING METHOD - A welding apparatus and a welding method are employed for laser narrow groove welding which performs welding scanning a laser beam in the welding direction while feeding a solid filler metal into a narrow groove. The welding apparatus includes a laser beam irradiation head having a mechanism periodically oscillating an irradiation point of the laser beam with a predetermined amplitude in the bottom of the groove, and a filler metal control device having a solid filler metal feeder feeding the solid filler metal to the molten pool formed in the bottom of the groove by the laser beam and adjusting the feeding position independent of a motion of the laser beam irradiation head so that the tip position of the solid filler metal detected is constantly positioned in the center of the groove. | 12-30-2010 |
20110089151 | LASER PROCESSING HEAD AND LASER CLADDING METHOD - A laser processing head in accordance with the present invention comprises: a laser emitting unit for irradiating a workpiece with a laser light; and a powder feeder disposed around a periphery of the laser emitting unit for discharging filler material powder to the workpiece, in which the powder feeder includes: a position adjustment mechanism for adjusting a position where the powder concentrates; and a powder concentration diameter adjustment mechanism for adjusting a diameter of the filler material powder. The laser processing head further comprises a controller for controlling the position adjustment mechanism and the powder concentration diameter adjustment mechanism. | 04-21-2011 |
20110126540 | HIGH-STRENGTH HEAT RESISTING CAST STEEL, METHOD OF PRODUCING THE STEEL, AND APPLICATIONS OF THE STEEL - A high-strength heat resisting cast steel which has high creep rupture strength at temperatures of 620° C. or above, high toughness, and good weldability. A method of producing the steel, a steam turbine casing, a main steam valve casing, and a steam control valve casing, each casing being made of that steel, as well as a steam turbine power plant using those components are also provided. The high-strength heat resisting cast steel contains 0.06-0.16% by mass of C, 0.1-1% of Si, 0.1-1% of Mn, 8-12% of Cr, 0.1-1.0% of Ni, 0.7% or less of Mo, 1.9-3.0% of W, 0.05-0.3% of V, 0.01-0.15% of one or more of Nb, Ta and Zr in total, 0.1-2% of Co, 0.01-0.08% of N, and 0.0005-0.01% of B, the balance being Fe and unavoidable impurities. | 06-02-2011 |
20110248001 | METAL DEPOSITION METHOD AND LASER METAL DEPOSITION APPARATUS - In a deposition method of forming a buildup on a single crystal or directionally solidified crystal parent material, metal deposition is performed from an extension in a preferential growth orientation of parent material crystals while forcedly cooling a portion of the parent material somewhat below a processed surface and beforehand giving a temperature gradient to the parent material so that a maximum temperature gradient is oriented along the preferential growth orientation of parent material crystals. | 10-13-2011 |
Patent application number | Description | Published |
20150149553 | APPARATUS AND METHOD FOR PROCESSING INFORMATION AND PROGRAM FOR THE SAME - In a first aspect of the present invention, provided are an information processing apparatus including a behavior-history acquisition unit configured to acquire behavior histories of first users identified by first-user identification information, a transmission-history acquisition unit configured to acquire information transmission histories of second users identified by second-user identification information, and a determination unit configured to determine identity between the first users and the second users on the basis of behavior details included in the behavior histories and transmission details included in the transmission histories; a method for processing information with the information processing apparatus; and a program using the information processing apparatus. | 05-28-2015 |
20150278702 | INFORMATION PROCESSING USING PRIMARY AND SECONDARY KEYWORD GROUPS - An information processing device includes a keyword acquiring unit configured to acquire a plurality of primary keyword and secondary keyword groups; a classifying unit configured to classify each of the plurality of secondary keywords by a plurality of topics; an estimating unit configured to estimate whether or not each primary keyword in the plurality of groups is a related keyword related to any topic having a classified secondary keyword or a mixed keyword unrelated to any of the topics; and an assigning unit configured to preferentially assign a primary keyword estimated to be a related keyword to a topic having a classified secondary keyword in the same group, and assigning a primary keyword estimated to be a mixed keyword to any of all the topics given for classification. | 10-01-2015 |
20150286930 | INFORMATION PROCESSING USING PRIMARY AND SECONDARY KEYWORD GROUPS - An information processing device includes a keyword acquiring unit configured to acquire a plurality of primary keyword and secondary keyword groups; a classifying unit configured to classify each of the plurality of secondary keywords by a plurality of topics; an estimating unit configured to estimate whether or not each primary keyword in the plurality of groups is a related keyword related to any topic having a classified secondary keyword or a mixed keyword unrelated to any of the topics; and an assigning unit configured to preferentially assign a primary keyword estimated to be a related keyword to a topic having a classified secondary keyword in the same group, and assigning a primary keyword estimated to be a mixed keyword to any of all the topics given for classification. | 10-08-2015 |
20160063098 | METHOD, COMPUTER PROGRAM, AND COMPUTER FOR CLASSIFYING USERS OF SOCIAL MEDIA - A computer system and method to classify a plurality of users in a plurality of clusters in social media associating a text profile and text content with each user. The method comprises: generating a content feature vector for each of a portion of users on the basis of content associated with the portion of users; generating mapping the plurality of clusters, and the plurality of clusters and the portion of users, on the basis of the content feature vectors; generating a first profile feature vector for each of the plurality of clusters on the basis of the profiles associated with the portion of users mapped to each cluster; and classifying each of the other users excluding the portion of users in a plurality of clusters on the basis of the profiles associated with the other users and the first profile feature vectors. | 03-03-2016 |
Patent application number | Description | Published |
20090184371 | SEMICONDUCTOR DEVICE WITH AN SOI STRUCTURE - A first element includes a first diffused layer which is formed in the element forming film so as to reach an insulating film, a second diffused layer which is formed in the element forming film so as not to reach the insulating film, and a first body region formed between the first and the second diffused layers. A second element, which is formed on the element forming film so as to be adjacent to the first element, includes the second diffused layer, a third diffused layer which is formed in the element forming film so as to reach the insulating film, and a second body region formed between the second and the third diffused layers. A connection part connects the body region of the first element and the body region of the second element to each other electrically. | 07-23-2009 |
20090267159 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, a p-channel MIS transistor formed on the substrate, the p-channel transistor having a first gate dielectric formed on the substrate and a first gate electrode layer formed on the first dielectric, and an n-channel MIS transistor formed on the substrate, the n-channel transistor having a second gate dielectric formed on the substrate and a second gate electrode layer formed on the second dielectric. A bottom layer of the first gate electrode layer in contact with the first gate dielectric and a bottom layer of the second gate electrode layer in contact with the second gate dielectric have the same orientation and the same composition including Ta and C, and a mole ratio of Ta to a total of C and Ta, (Ta/(Ta+C)), is larger than 0.5. | 10-29-2009 |
20110227044 | TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - In one embodiment, a transistor includes: a substrate; a source electrode formed on the substrate; a drain electrode formed on the substrate; a graphene film formed between the source electrode and the drain electrode, the graphene film having a semiconductor region including a source side end and a conductor region including a drain side end, a width of the source side end of the graphene film in a channel width direction being narrower than a width of the drain side end of the graphene film in the channel width direction; and a gate electrode formed via a gate insulating film on the semiconductor region of the graphene film and the conductor region of the graphene film. The source electrode is connected to the source side end of the graphene film with a Schottky contact, and the drain electrode is connected to the drain side end of the graphene film with an ohmic contact. | 09-22-2011 |
20110284938 | SPIN TRANSISTOR AND INTEGRATED CIRCUIT - A spin transistor according to an embodiment includes: a first magnetic region supplying a first polarized signal polarized in a first magnetization direction in accordance with a first input signal; a second magnetic region supplying a second polarized signal polarized in a second magnetization direction opposite from the first magnetization direction in accordance with a second input signal, the second input signal being different from the first input signal; and a third magnetic region outputting the first polarized signal supplied from the first magnetic region in accordance with a third input signal, and outputting the second polarized signal supplied from the second magnetic region in accordance with a fourth input signal different from the third input signal. | 11-24-2011 |
20120064687 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method of manufacturing a semiconductor device includes: forming a gate electrode on a substrate via a gate dielectric film; forming a first insulating film on the gate electrode, the first insulating film having a first groove in a central region of the first insulating film; and forming a halo region in the substrate below a side surface of the gate electrode, by injecting an impurity into the substrate through the first insulating film. | 03-15-2012 |
20120068235 | INTEGRATED CIRCUIT - In accordance with an embodiment, an integrated circuit includes a first spin transistor and a second spin transistor. The first spin transistor has a first channel length. The first spin transistor includes a first node and a second node apart from the first node The second spin transistor is connected to the first transistor in series and has a second channel length different from the first channel length. The second spin transistor includes a third node and a fourth node apart from the third node The second node and the fourth node are electrically connected to each other. | 03-22-2012 |
20120074476 | INTEGRATED CIRCUIT - In accordance with an embodiment, an integrated circuit includes a circuit in which first and second spin transistors are connected in series. The first spin transistor has a first node and a second node that are equal to each other in magnetization direction. The second spin transistor has a third node and a fourth node that are opposite to each other in magnetization direction. The second node and the fourth node are electrically connected to each other. | 03-29-2012 |
20120091537 | SEMICONDUCTOR DEVICE - In accordance with an embodiment, a semiconductor device includes an SRAM cell on a substrate. The SRAM cell includes: first and second load transistors each having an n-type source region and a p-type drain region, first and second driver transistors each having a p-type source region and an n-type drain region, and first and second transfer transistors each having an n-type source region and a n-type drain region. The n-type source regions of the first and second load transistors, the n-type drain regions of the first and second driver transistors, and the n-type source regions and the n-type drain regions of the first and second transfer transistors are located in a region other than a region present between any two of the p-type drain regions of the first and second load transistors and the p-type source regions of the first and second driver transistors. | 04-19-2012 |
20120175637 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - According to one embodiment, a semiconductor device including: a substrate; a gate electrode formed above the substrate; a gate insulating film formed under the gate electrode; a channel layer formed under the gate insulating film by using a channel layer material; a source region and a drain region formed in the substrate so as to interpose the channel layer therebetween in a channel direction; and a source extension layer formed in the substrate between the channel layer and the source region so as to overlap a source-side end portion of the channel layer. The source extension layer forms a heterointerface with the channel layer. The heterointerface is a tunnel channel for carries. | 07-12-2012 |
20120228706 | SEMICONDUCTOR DEVICE - A memory includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. A first channel region of a first conductivity type is provided on a surface of the semiconductor layer below the gate insulating film. A diffusion layer of a second conductivity type is provided below the first channel region in the semiconductor layer. The diffusion layer contacts a bottom of the first channel region in a direction substantially vertical to a surface of the semiconductor layer. The diffusion layer forms a PN junction with the bottom of the first channel region. A drain of a first conductivity type and a source of a second conductivity type are provided on a side and another side of the first channel region. A sidewall film covers a side surface of the first channel region on a side of the diffusion layer. | 09-13-2012 |
20120326224 | SEMICONDUCTOR DEVICE - A semiconductor device has a semiconductor substrate, and a semiconductor element having an FET on the semiconductor substrate and comprises a different threshold voltage depending on an OFF state and an ON state. The semiconductor element has an insulating film disposed above a part where a channel of the semiconductor substrate is formed, a gate electrode disposed above the insulating film, and a charge trap film disposed between the insulating film and the gate electrode, and to exchange more electrons with the gate electrode than with the channel. | 12-27-2012 |
20130134504 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a semiconductor device includes a substrate including a trench, and a gate electrode disposed at a position adjacent to the trench on the substrate, the gate electrode having a first side surface located on an opposite side of the trench, and a second side surface located on the same side as the trench. The device further includes a first sidewall insulator disposed on the first side surface, and a second sidewall insulator disposed on the second side surface and a side surface of the trench. The device further includes a source region of a first conductivity type disposed in the substrate on the same side as the first sidewall insulator with respect to the first side surface, and a drain region of a second conductivity type disposed in the substrate on the same side as the second sidewall insulator with respect to the second side surface. | 05-30-2013 |
20140061808 | PASS GATE AND SEMICONDUCTOR STORAGE DEVICE HAVING THE SAME - According to an embodiment, a semiconductor storage device includes an SRAM cell. The SRAM cell includes first and second transfer gates each comprising a pass gate. The pass gate includes first and second tunnel transistors. The first tunnel transistor includes a first conductivity type first diffusion region as a source or drain region, a second conductivity type second diffusion region as a drain or source region, and a gate electrode supplied with a control voltage. The second tunnel transistor includes a first conductivity type first diffusion region as a source or drain region, a second conductivity type second diffusion region as a drain or source region electrically connected to the second diffusion region of the first tunnel transistor, and a gate electrode electrically connected to the gate electrode of the first tunnel transistor. | 03-06-2014 |
20140291736 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a first main terminal region of a first conductivity type and a second main terminal region of a second conductivity type, which is an opposite conductivity type of the first conductivity type, formed in the semiconductor substrate so as to sandwich a gate electrode, a diffusion layer of the second conductivity type coming in contact with the first and second element isolation insulator films and having an upper surface in a position deeper than lower surfaces of the first and second main terminal regions, a first well region of the first conductivity type formed between the first main terminal region and the diffusion layer, and a second well region of the first conductivity type formed between the second main terminal region and the diffusion layer. The second well region has a impurity concentration higher than that of the first well region. | 10-02-2014 |
20150076553 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A gate electrode is provided on the semiconductor layer via the gate dielectric film. A drain layer of a first conductivity type is provided in a part of the semiconductor layer on a side of a first end of the gate electrode. A source layer of a second conductivity type is provided in a part of the semiconductor layer on a side of a second end of the gate electrode and below the gate electrode. The source layer has a substantially uniform impurity concentration at the part of the semiconductor layer below the gate electrode. Voltages of a same polarity are applied to the gate electrode and the drain layer. | 03-19-2015 |
Patent application number | Description | Published |
20130290024 | DISPLAY DEVICE AND DISPLAY CONTROL PROGRAM FOR THE SAME - A display device including a display control unit is provided. The display control unit is configured to display, in a display screen, a list image including a list of medical data that includes a part of a plurality of pieces of medical data of a patient having different time information. The display control unit is further configured to display a period image illustrating a total period from an oldest time to the present in time information of the medical data of the patient such that the total period fits in the display screen, wherein the display control unit is configured to display, in the period image, a partial period from an oldest time to a latest time of the time information of the medical data included on the displayed list of medical data. | 10-31-2013 |
20140096031 | IMAGE DISPLAY SYSTEM AND IMAGE DISPLAY DEVICE - An image display system is provided. The image display system includes a data server configured to store image data, a display terminal configured to display an image based on image data obtained from the data server and configured to receive additional information from an operator to be added to the image, and an information sharing unit configured to store specification information and the additional information, the specification information specifying additional image data added on the image with the additional information. The information sharing unit is configured to store additional information and specification information inputted at a plurality of display terminals, and, when the image data obtained from the data server coincides with the additional image data, the display terminal is configured to display the image and the additional information. | 04-03-2014 |
20150227703 | Display Apparatus and Image Display System - A display apparatus including: a display controller for displaying a view of simplified images based on medical data having accompanying information of a plurality of attributes as metadata, wherein said view of simplified images being a matrix-like view in which the simplified images of the same patient are arranged by accompanying information of one attribute in a row direction and arranged by accompanying information of another attribute in a column direction; and an input unit in which an operator performs input of changing the attribute in at least one of the row and column directions. The display controller rearranges the simplified images by accompanying information of the attribute that the operator changed using the input unit. | 08-13-2015 |
20150363955 | DISPLAY DEVICE, IMAGE DISPLAY SYSTEM AND CONTROL PROGRAM FOR IMAGE DISPLAY SYSTEM - An image display system capable of readily grasping whether or not there are images which are not displayed on a display unit with no need of moving a screen is provided. The system includes a list preparation unit for preparing a list that simple images which are based on medical data are arranged in a matrix, and a display screen on which the aforementioned list is partially displayed, the display screen on which an indicator indicating presence and/or absence of the simple images which are not displayed on the display screen, and indicating presence and/or absence of the aforementioned simple images on at least any one of the upper side, the lower side, the right side and the left side of a displayed part of the aforementioned list is displayed. The indicator includes a number of simple images which are not displayed on the aforementioned display screen. | 12-17-2015 |
20150370418 | DISPLAY DEVICE AND IMAGE DISPLAY SYSTEM - Problem: A display device and an image display system are provided which can easily identify different kinds of windows. Solution: A list X of simplified images M is based on data containing associated information of multiple attributes as metadata. A display is provided to display the list X in a matrix in which the simplified images M are located for respective pieces of associated information of one attribute in a row direction while the simplified images M are located for respective pieces of associated information of another attribute in a column direction. The display has a first sub window SW | 12-24-2015 |
Patent application number | Description | Published |
20150152982 | THICK-WALLED HIGH-STRENGTH SOUR-RESISTANT LINE PIPE AND METHOD FOR PRODUCING SAME - A line pipe and a production method therefor are provided. The microstructure in the pipe thickness direction contains 90% or more bainite in a region that extends from a position 2 mm from an inner surface to a position 2 mm from an outer surface. In a hardness distribution in the pipe thickness direction, the hardness in a region other than a center segregation area is 220 Hv10 or less and the hardness in the center segregation area is 250 Hv0.05 or less. The major axes of pores, inclusions, and inclusion clusters that are present in a portion that extends from a position 1 mm from the inner surface to a 3/16 position of the tube thickness and in a portion that extends from a position 1 mm from the outer surface to a 13/16 position of the tube thickness in the tube thickness direction are 1.5 mm or less. A continuous casting slab having the above-described composition is hot-rolled under particular conditions and then subjected to accelerated cooling. | 06-04-2015 |
20150176727 | THICK, HIGH-STRENGTH, SOUR-RESISTANT LINE PIPE AND METHOD FOR PRODUCING SAME - A line pipe having a wall thickness of 20 mm or more and a tensile strength of 560 MPa or more and a production method therefor are provided. The base metal portion contains particular amounts of C, Si, Mn, P, S, Al, Nb, Ca, N, and O, one or more component selected from Cu, Ni, Cr, Mo, V, and Ti as optional components, and the balance being Fe and unavoidable impurities. The microstructure in the pipe thickness direction contains 90% or more bainite and 1% or less of MA in a region that extends from a position 2 mm from an inner surface to a position 2 mm from an outer surface. In a hardness distribution in the pipe thickness direction, the hardness in a region other than a center segregation area is 220 Hv10 or less and the hardness in the center segregation area is 250 Hv10 or less. The major axes of pores, inclusions, and inclusion clusters that are present in a portion that extends from, a position 1 mm from the inner surface to a 3/16 position of the tube thickness and in a portion that extends from a position 1 mm from the outer surface to a 13/16 position of the tube thickness in the tube thickness direction are 1.5 mm or less. | 06-25-2015 |
Patent application number | Description | Published |
20110234348 | RARE-EARTH MAGNET, METHOD OF MANUFACTURING RARE-EARTH MAGNET, AND ROTATOR - A rare-earth magnet is an R-T-B-based rare-earth magnet containing a rare-earth element R, a transition metal element T, and boron B. The rare-earth magnet further contains Cu and Co, while having a Cu concentration distribution with a gradient along a direction from a surface of the rare-earth magnet to the inside thereof, Cu having a higher concentration on the surface side of the rare-earth magnet than on the inside thereof, and a Co concentration distribution with a gradient along a direction from the surface of the rare-earth magnet to the inside thereof, Co having a higher concentration on the surface side of the rare-earth magnet than on the inside thereof. The rare-earth magnet is excellent in corrosion resistance. | 09-29-2011 |
20130260242 | NEGATIVE ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY AND LITHIUM-ION SECONDARY BATTERY - The negative electrode for lithium-ion secondary battery is used in which a product of tensile strength and thickness of a negative electrode having a negative electrode active material layer containing silicon and silicon oxide as main components is 3.8 to 9.0 N/mm and a value obtained by dividing the product of the tensile strength and the thickness of the negative electrode by a product of tensile strength and thickness of a negative electrode current collector is 1.06 to 1.29. | 10-03-2013 |
20130260256 | LITHIUM-ION SECONDARY BATTERY - In the invention, a lithium-ion secondary battery, in which a value obtained by dividing average 3% modulus strength of a separator by average 3% modulus strength of a negative electrode including a negative electrode active material layer containing silicon and silicon oxide as a main component is 0.079 or less, is used. | 10-03-2013 |
20150311518 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY - A negative electrode active material for a lithium ion secondary battery includes a network structure formed by at least some of iron oxide particles being linked to each other. | 10-29-2015 |
20150311519 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY - A negative electrode active material for a lithium ion secondary battery includes secondary particles formed by primary particles containing iron oxide that are linked in a chain. | 10-29-2015 |