Patent application number | Description | Published |
20090294775 | HEXAGONAL WURTZITE TYPE EPITAXIAL LAYER POSSESSING A LOW ALKALI-METAL CONCENTRATION AND METHOD OF CREATING THE SAME - A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane. | 12-03-2009 |
20100065854 | GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY - A Group III-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group III-nitride semi-conductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group III-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group III-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075° C., the Group III-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 10 | 03-18-2010 |
20100111808 | GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME - The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth. | 05-06-2010 |
20100189981 | LARGE-AREA BULK GALLIUM NITRIDE WAFER AND METHOD OF MANUFACTURE - The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication. | 07-29-2010 |
20110203514 | NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Reactor designs for use in ammonothermal growth of group-III nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel. | 08-25-2011 |
20110209659 | CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL - A method for controlling the relative and absolute growth rates of all possible crystallographic planes of a group-III nitride crystal during ammonothermal growth. The growth rates of the various exposed crystallographic planes of the group-III nitride crystal are controlled by modifying the environment and/or conditions within the reactor vessel, which may be subdivided into a plurality of separate zones, wherein each of the zones has their own environment and conditions. The environment includes the amount of atoms, compounds and/or chemical complexes within each of the zones, along with their relative ratios and the relative motion of the atoms, compounds and/or chemical complexes within each of the zones and among the zones. The conditions include the thermodynamic properties each of the zones possess, such as temperatures, pressures and/or densities. | 09-01-2011 |
20110212013 | ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - A method for adding hydrogen-containing and/or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen-containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side. | 09-01-2011 |
20110220013 | REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals. | 09-15-2011 |
20110223092 | USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid. | 09-15-2011 |
20110262773 | Ammonothermal Method for Growth of Bulk Gallium Nitride - A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication. | 10-27-2011 |
20110300051 | GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME - A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system. | 12-08-2011 |
20130251615 | POLYCRYSTALLINE GROUP III METAL NITRIDE WITH GETTER AND METHOD OF MAKING - A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals. | 09-26-2013 |
20130340672 | USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid. | 12-26-2013 |
20140147650 | HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AND METHODS OF USE - High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices. | 05-29-2014 |
20150132926 | PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES - Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. | 05-14-2015 |
Patent application number | Description | Published |
20110028657 | MULTIFUNCTIONAL CHAIN SHUTTLING AGENTS - The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes. | 02-03-2011 |
20130072377 | MULTIFUNCTIONAL CHAIN SHUTTLING AGENTS - The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes. | 03-21-2013 |
20130072639 | MULTIFUNCTIONAL CHAIN SHUTTLING AGENTS - The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes. | 03-21-2013 |
20130072640 | MULTIFUNCTIONAL CHAIN SHUTTLING AGENTS - The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes. | 03-21-2013 |
20130072707 | MULTIFUNCTIONAL CHAIN SHUTTLING AGENTS - The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes. | 03-21-2013 |
20130085247 | MULTIFUNCTIONAL CHAIN SHUTTLING AGENTS - The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes. | 04-04-2013 |
20150306018 | SILICONE MODIFIED POLYOLEFINS IN PERSONAL CARE APPLICATIONS - The present invention provides personal care formulations containing silicone modified polyolefins and having improved sensory feel, as well as being non-tacky and easily spreadable. The present invention also provides a method for treating body surfaces such as skin, hair, nails, etc., by applying the aforesaid personal care formulations externally to such a surface. The present invention also provides a method for improving the sensory feel of personal care formulations by including one or more silicone modified polyolefins in the formulations. | 10-29-2015 |
20150344699 | AMBIENT CURE, FAST DRY AUTOMOTIVE REFINISH PRIMER SURFACER COMPOSITIONS AND METHODS OF USE - The present invention provides substantially isocyanate-free multicomponent compositions useful in making rapid dry automotive primer compositions and coatings, the compositions having a % PVC of from 20 to 60, or preferably, from 25 to 50, and comprising one or more pigment, extender or filler, one or more a) polycarbamates from alkyd polyol or acrylic polyol and one or more b) a polyaldehydes or the acetal or hemiacetal thereof as a second component. The multicomponent compositions cure quickly at a temperature of from 0° C. to less than 80° C. to form a crosslinked polyurethane which dries to enable sanding after only 15 to 45 minutes. | 12-03-2015 |
Patent application number | Description | Published |
20130172472 | CROSSLINKABLE COMPOSITION AND METHOD OF PRODUCING THE SAME - The instant invention provides a crosslinkable aqueous composition, method of producing the same, crosslinked compositions, and method of producing the same. The crosslinkable composition comprising: an aqueous dispersion comprising; (a) water; (b) a polycarbamate comprising at least an average of 2.0 carbamate functional groups; (c) a polyaldehyde comprising at least two aldehyde groups; (d) an acid catalyst; and (e) optionally one or more surfactants; wherein said aqueous dispersion has a pH in the range of less than 7; and wherein said composition is capable of being crosslinked at a temperature in range of less than 80° C. upon substantial removal of water. | 07-04-2013 |
20140221554 | CROSSLINKABLE COMPOSITION AND METHOD OF PRODUCING THE SAME - The instant invention provides a crosslinkable aqueous composition, method of producing the same, crosslinked compositions, and method of producing the same. The crosslinkable composition comprising: an aqueous dispersion comprising; (a) water; (b) a polycarbamate comprising at least an average of 2.0 carbamate functional groups; (c) a polyaldehyde comprising at least two aldehyde groups; (d) an acid catalyst; and (e) optionally one or more surfactants; wherein said aqueous dispersion has a pH in the range of less than 7; and wherein said composition is capable of being crosslinked at a temperature in range of less than 80° C. upon substantial removal of water. | 08-07-2014 |
20150267075 | Crosslinkable Composition and Method of Producing the Same - The instant invention provides crosslinkable compositions, and method of producing the same. The non-aqueous single phase crosslinkable composition comprises: (a) a polyol having an average of 2 or more hydroxyl functional groups; (b) polyaldehyde, or acetal or hemiacetal thereof; and (c) an acid catalyst having pK of less than 6; and (d) optionally one or more organic solvents. | 09-24-2015 |
20150274915 | ORGANOPHOSPHORUS COMPOUNDS FOR FLAME RETARDANT POLYURETHANE FOAMS - An organophosphorus compound useful in a phosphorus containing flame retardant and a flame retardant polyurethane foam, where the organophosphorus compound is shown in Formula (I) where Y is selected from the group consisting of an —OH group, an —NH | 10-01-2015 |