Patent application number | Description | Published |
20080227946 | Thermosetting Composition and Curing Method Thereof - The invention relates to a thermosetting composition comprising (A) a compound having at least one oxetanyl group in the molecule, (B) a compound having at least two carboxyl groups in the molecule, and (C) an imidazolium salt, curing method thereof and products cured thereby. Cured products prepared from the composition of the invention is excellent in electrical isolation, flexibility, adhesiveness and mechanical strength. | 09-18-2008 |
20080286690 | THIOL COMPOUND AND PHOTOSENSITIVE COMPOSITION USING THE SAME - The present invention relates to a thiol compound represented by formula (1): wherein R | 11-20-2008 |
20090105395 | CURABLE RESIN COMPOSITION - The present invention is directed to a novel functional polyorganosiloxane having on average two or more vinyl groups in one molecule thereof. | 04-23-2009 |
20090274916 | PHOSPHORUS-CONTAINING BENZOXAZINE COMPOUND, PROCESS FOR PRODUCTION THEREOF, CURABLE RESIN COMPOSITION, CURED ARTICLE, AND LAMINATE PLATE - The present invention is directed to a compound serving as both a flame retardant and a curing agent (crosslinking agent) for curable resin, a method for producing the compound, a flame-retardant curable resin composition containing the compound, and a cured product and a laminated sheet having flame retardancy produced through curing the cured resin composition. The compound has a benzoxazine structure and a phosphine oxide structure in a molecule thereof. | 11-05-2009 |
Patent application number | Description | Published |
20140265911 | HIGH-VOLTAGE INVERTER, DIELECTRIC-BARRIER DISCHARGE EVICE AND CATION APPARATUS - An inverter switches input voltage Vin to flow an excitation current to excitation winding Np of a transformer and output to a discharger an alternating voltage Vout from the output winding Ns. In an output circuit flowing a current to the discharger, a voltage-responsive connector is connected in series with the winding Ns to interrupt or connect the output circuit according to a voltage applied to between opposed electrodes. The voltage-responsive connector has characteristics of keeping the electrodes in an insulated state until an instantaneous value of the alternating voltage reaches a predetermined value, and holding the electrodes in a conduction state while the instantaneous value of the alternating voltage has reached the predetermined value and continues to exceed the predetermined value, and quickly returning the electrodes to the insulated state when the instantaneous value of the alternating voltage has fallen below the predetermined value. | 09-18-2014 |
20140268966 | HIGH-VOLTAGE INVERTER - An inverter includes transformers having identical characteristics. Exciting windings of the transformers are connected in parallel so that the transformers are excited simultaneously. Output windings of the transformers are connected in series so that waveforms of output voltages of the output windings are time-synchronized. Each transformer includes a core having an identical shape and including an inner leg having an independent closed magnetic circuit. The excitation winding and the output winding are wrapped around the inner leg of the core in layers. The inner leg of the core has a gap whose size is steplessly adjustable in a state where the excitation current is applied to the excitation winding. The size of the gap is adjusted to regulate exciting inductances of the transformers to a same predetermined value. | 09-18-2014 |
20150200606 | INVERTER DEVICE, PLASMA GENERATING DEVICE, SHEET-MEMBER REFORMING DEVICE, AND ALTERNATING-CURRENT VOLTAGE OUTPUT METHOD - An inverter device includes: multiple inverters that switch input voltages by turning on and off respective switching elements to thereby apply excitation currents to primary excitation windings of respective boosting transformers and output alternating-current voltages from secondary output windings of the respective boosting transformers, the multiple inverters having the same output characteristics, and a common control circuit, on/off control of the switching elements of the inverters being performed by the same switching signal output from the common control circuit. | 07-16-2015 |
20150271906 | INVERTER DEVICE, PLASMA GENERATOR APPARATUS AND CONTROL METHOD - An inverter device includes a switching device which performs on-off switching of an input voltage, a step-up transformer which applies an excitation current to its winding during a switching-device-on period and outputs an output voltage during a switching-device-off period, an input-voltage detector which detects the input voltage and output an input-voltage detection signal, an output voltage detector which detects the output voltage and output an output-voltage detection signal, an output-produced-period detector which detects a period when the output voltage is produced based on the output-voltage detection signal, a comparator which detects a period when the output-voltage detection signal exceeds the input-voltage detection signal and output information indicating the output-high period, and a shifting unit which shifts the information indicating the output-high period to a next period when absence of the output produced period is detected. The control unit adjusts the switching-device-on period based on information indicating the shifted output-high period. | 09-24-2015 |
Patent application number | Description | Published |
20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
20090195296 | Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices - In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C. | 08-06-2009 |
20090317983 | Process for Producing Silicon Carbide Semiconductor Device - In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package. | 12-24-2009 |
20150376813 | METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT - When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA′ parallel to the first direction [11-20] toward second directions [−1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ≧40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [−1-120] opposite to the first direction [11-20] and the second directions [−1100], [1-100], to discharge defects. | 12-31-2015 |
Patent application number | Description | Published |
20110319394 | FUSED HETEROCYCLIC COMPOUNDS - The present invention provides a compound which has the effect of PDE inhibition, and which is useful as an agent for preventing or treating schizophrenia. The compound is represented by the formula (I): | 12-29-2011 |
20120059030 | HETEROCYCLIC COMPOUND AND USE THEREOF - The present invention provides a heterocycle derivative having a superior amyloid β production inhibitory activity and/or a superior γ-secretase modulation activity, and use thereof. A compound represented by the formula (I): | 03-08-2012 |
20120142714 | BICYCLIC COMPOUND - The present invention provides a compound having an ACC inhibitory action, which is useful as an agent for the prophylaxis or treatment of obesity, diabetes and the like, and having superior efficacy. | 06-07-2012 |
20130172328 | FUSED HETEROCYCLIC COMPOUNDS AS PHOSPHODIESTERASES (PDES) INHIBITORS - The present invention provides a compound which has the effect of PDE inhibition, and which is useful as an agent for preventing or treating schizophrenia or so on represented by the formula (I): | 07-04-2013 |
20130178497 | FUSED TRIAZOLES FOR THE TREATMENT OR PROPHYLAXIS OF MILD COGNITIVE IMPAIRMENT - The present invention provides a heterocycle derivative having a superior amyloid β production inhibitory activity and/or a superior γ-secretase modulation activity, and use thereof. A compound represented by the formula (I): wherein each symbol is as defined in the present specification, or a salt thereof. | 07-11-2013 |
20130303553 | FUSED HETEROCYCLIC COMPOUNDS - The present invention provides a compound which has the effect of PDE inhibition, and which is useful as an agent for preventing or treating schizophrenia. The compound is represented by the formula (I): | 11-14-2013 |
20140350260 | HETEROCYCLIC COMPOUND AND USE THEREOF - The present invention provides a heterocycle derivative having a superior amyloid β production inhibitory activity and/or a superior γ-secretase modulation activity, and use thereof. A compound represented by the formula (I): | 11-27-2014 |
20150307451 | NITROGEN-CONTAINING HETEROCYCLIC COMPOUND - The present invention provides a compound having a cholinergic muscarinic M1 receptor positive allosteric modulator activity and useful as an agent for the prophylaxis or treatment of Alzheimer's disease, schizophrenia, pain, sleep disorder, Parkinson's disease dementia, dementia with Lewy bodies, and the like. | 10-29-2015 |
20150307497 | NITROGEN-CONTAINING HETEROCYCLIC COMPOUND - Provided is a compound having a cholinergic muscarinic M1 receptor positive allosteric modulator activity, and useful as a prophylactic or therapeutic drug for Alzheimer's disease, schizophrenia, pain, sleep disorder and the like. The present invention relates to a compound represented by the formula | 10-29-2015 |