Patent application number | Description | Published |
20100248096 | COLORED CURABLE COMPOSITION, METHOD FOR PRODUCING COLOR FILTER, COLOR FILTER, SOLID-STATE IMAGE PICKUP DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - A colored curable composition including at least (A-1) a complex including a compound represented by the following formula (I) and a metal atom or a metal compound, (A-2) a phthalocyanine pigment, (B) a dispersing agent, (C) a polymerizable compound, (D) a photopolymerization initiator, and (E) an organic solvent: | 09-30-2010 |
20110051058 | COLORED CURABLE COMPOSITION, METHOD FOR PRODUCING COLOR FILTER, COLOR FILTER, SOLID-STATE IMAGE PICKUP DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - A colored curable composition including at least (A-1) a complex including a compound represented by the following formula (I) and a metal atom or a metal compound, (A-2) a phthalocyanine pigment, (B) a dispersing agent, (C) a polymerizable compound, (D) a photopolymerization initiator, and (E) an organic solvent: | 03-03-2011 |
20110217636 | COLORED CURABLE COMPOSITION, COLOR FILTER AND METHOD OF PRODUCING COLOR FILTER, SOLID-STATE IMAGE SENSOR AND LIQUID CRYSTAL DISPLAY DEVICE - The present invention provides a colored curable composition including a phthalocyanine pigment, a dioxazine pigment, a dye, a polymerization initiator, a polymerizable compound and a solvent; and a colored curable composition including a phthalocyanine pigment, a dye multimer having a polymerizable group and a group derived from a dipyrromethene dye, a polymerization initiator, a polymerizable compound and a solvent. | 09-08-2011 |
20120264039 | COLORED CURABLE COMPOSITION, RESIST LIQUID, INK FOR INKJET PRINTING, COLOR FILTER, METHOD OF PRODUCING COLOR FILTER, SOLID-STATE IMAGE SENSOR, LIQUID CRYSTAL DISPLAY, ORGANIC EL DISPLAY, IMAGE DISPLAY DEVICE AND COLORANT COMPOUND - The invention provides a colored curable composition including a dipyrromethene compound having a structure in which a polymerizable group and a carboxyl group are introduced in the same molecule, a resist liquid, an ink for inkjet printing, a color filter, a method of producing a color filter, a solid-state image sensor, a liquid crystal display, an organic EL display, an image display device and a colorant compound. | 10-18-2012 |
20130334473 | COLORED CURABLE COMPOSITION, COLOR FILTER AND METHOD OF PRODUCING COLOR FILTER, SOLID-STATE IMAGE SENSOR AND LIQUID CRYSTAL DISPLAY DEVICE - The present invention provides a colored curable composition including a phthalocyanine pigment, a dioxazine pigment, a dye, a polymerization initiator, a polymerizable compound and a solvent; and a colored curable composition including a phthalocyanine pigment, a dye multimer having a polymerizable group and a group derived from a dipyrromethene dye, a polymerization initiator, a polymerizable compound and a solvent. | 12-19-2013 |
Patent application number | Description | Published |
20100003539 | Plated article having metal thin film formed by electroless plating, and manufacturing method thereof - The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 μΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film. | 01-07-2010 |
20100038111 | Plated article having metal thin film formed by electroless plating, and manufacturing method thereof - The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 μΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film. | 02-18-2010 |
20100215970 | METHOD FOR SUPPORTING METAL NANOPARTICLES AND METAL NANOPARTICLES-CARRYING SUBSTRATE - A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method. | 08-26-2010 |
20100244258 | SUBSTRATE AND MANUFACTURING METHOD THEREFOR - It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent. | 09-30-2010 |
20100244259 | SUBSTRATE AND MANUFACTURING METHOD THEREFOR - It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent. | 09-30-2010 |
20110129688 | PLATED PRODUCT HAVING COPPER THIN FILM FORMED THEREON BY ELECTROLESS PLATING - An object of the present invention is to provide a plated object having a thin seed layer of uniform thickness that enables the fabrication of ultrafine wiring thereon in which, when the seed layer is formed by electroless copper plating, the uniformity and adherence thereof are improved over the aforementioned case in which electroless copper plating is performed on an elemental metal such as tungsten, molybdenum, etc., and the aforementioned complexity of forming two layers of a barrier layer and a catalyst metal layer before forming the copper seed layer is eliminated. | 06-02-2011 |
20110155570 | Barrier Film for Semiconductor Wiring, Sintered Compact Sputtering Target and Method of Producing the Sputtering Target - Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles. The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target. | 06-30-2011 |
20110241209 | Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power - It is an object of the present invention to provide a layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, provide a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness, and provide a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. The present invention provides a substrate in which an alloy film of one or more metal elements, having a barrier function, selected from among tungsten, molybdenum and, niobium and a metal element or metal elements, having catalytic power with respect to electroless plating, composed of ruthenium and/or platinum is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm in a composition with a content ratio of the one or more metal element having a barrier function of equal to or greater than 5 at. % and equal to or less than 90 at. %. | 10-06-2011 |
20120104502 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Disclosed is a method of producing a semiconductor device, able to form a source/drain of a Schottky junction (FET) with simple steps and able to improve the device characteristics. A gate is formed on an element region defined in a silicon substrate layer by element isolation regions (first step), the silicon substrate is etched by self-alignment using the gate and the element isolation regions as masks (second step), and an insulating film is formed on the side surfaces of the gate (third step). Then, a metal film acting as the source/drain is selectively formed on the etching region of the silicon substrate by electroless plating (fourth step). | 05-03-2012 |
Patent application number | Description | Published |
20080198258 | Single lens reflex type electronic imaging apparatus - There is disclosed an electronic imaging apparatus capable of selecting a first observation mode in which a subject image is observed using an optical finder and a second observation mode in which the subject image is acquired as image data from an image pickup device and is displayed in a monitor. In this electronic imaging apparatus, subject information (e.g., a person position) recognized based on the image data from the image pickup device in the second observation mode is succeeded even in the first observation mode, and shooting conditions can be set based on the subject information even in the first observation mode. | 08-21-2008 |
20080205917 | Image forming apparatus - An image forming apparatus includes an image forming unit having an image carrier, a developing agent container for holding a developing agent, and a developing agent supplier for supplying the developing agent from the developing agent container to the image carrier. A controller determines the amount of use of the image forming unit. A shaking mechanism shakes the image forming unit from time to time, at intervals determined by the controller according to the amount of use of the image forming unit. The shaking loosens the developing agent so as to maintain its fluidity, thereby avoiding faint image formation. | 08-28-2008 |
20090009617 | Imaging apparatus - The object of the present invention is to provide an imaging apparatus capable of preventing the degradation of image quality associated with a temperature rise in an image pickup device despite that an electronic viewfinder is usable. An imaging apparatus including an image pickup device for capturing a subject image to acquire it as image data and capable of viewing a subject by selecting either of a first finder mode for optical viewing of the subject image and a second finder mode for displaying the image data on a display unit to allow viewing of the image data, the imaging apparatus comprises: a temperature detection circuit for measuring the temperature of the image pickup device; a finder mode switching instruction part for switching between the first finder mode and the second finder mode; and a controller for inhibiting switching from the first finder mode to the second finder mode performed by the finder mode switching instruction part when the temperature exceeds a first threshold. | 01-08-2009 |
20090136259 | Developer collection container, developer cartridge, developing unit and image forming apparatus - A developer collection container includes a developer storing portion having first and second end portions in a longitudinal direction thereof. A developer supply opening is provided on the first end portion through which the developer is supplied into the developer storing portion. A rotation member is rotatably provided so as to extend substantially from the first end portion to the second end portion. The rotation member rotates so as to convey the developer in the longitudinal direction of the developer storing portion. In a first region closer to the first end portion, the rotation member conveys the developer in a direction from the first end portion toward the second end portion with a conveying power which is larger than a conveying power with which the rotation member conveys the developer in a second region closer to the second end portion. | 05-28-2009 |
20100215410 | Developer regulating member, developing device, image forming apparatus and manufacturing method of developer regulating member - A developer regulating member regulates a thickness of a layer of a developer on a surface of a developer bearing body. The developer has a degree of circularity in a range from 0.94 to 0.97. The developer regulating member includes a resilient plate member composed of a metal material and having a bent portion. An outer surface of the bent portion contacts the surface of the developer bearing body so that a ridge line of the outer surface of the bent portion crosses a moving direction of the surface of the developer bearing body. A curvature radius R (μm) of the outer surface of the bent portion and a mean crystal grain diameter D (μm) of the metal material satisfy the relationship: | 08-26-2010 |
20110127027 | COOLING METHOD AND COOLING SYSTEM OF ELECTRONIC DEVICE - A cooling method of an electronic device, the cooling method naturally circulating a cooling medium between an evaporator, which gasifies the cooling medium and cools heat-discharging air from the electronic device by heat exchange with the heat-discharging air, and a cooling tower or a condenser, which is disposed at a higher position than the evaporator and liquefies the gasified cooling medium, and subjecting a flow rate of the cooling-medium liquid supplied to the evaporator to valve control so that a temperature of the air obtained after the heat exchange and the cooling by the evaporator becomes a temperature suitable for an operating environment of the electronic device, wherein the improvement comprises that
| 06-02-2011 |
20110129252 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image forming apparatus main body, and a replaceable part detachably attached to the image forming apparatus main body and movable in attaching-and-detaching direction to be attached to or detached from the image forming apparatus main body. The replaceable part includes a storage portion, the storage portion including a memory for storing information of the replaceable part and/or the image forming apparatus main body, and a first contact portion electrically connected to the memory. The image forming apparatus main body includes a second contact portion that electrically contacts the first contact portion. The first contact portion has an inclination at a predetermined angle with respect to the attaching-and-detaching direction. | 06-02-2011 |
20110185758 | COOLING SYSTEM FOR ELECTRONIC APPARATUS - A cooling system for an electronic apparatus, includes: a casing in which the electronic apparatus is housed; an evaporator which is disposed at a rear surface side of the casing, and cools heat released from the electronic apparatus by a refrigerant; a slide mechanism which connects the casing and the evaporator to be movable in a longitudinal direction with respect to the casing; at least any one of a cooling tower which is provided at a higher place than the evaporator and condenses the refrigerant by cooling of external air and sprinkled water, and a heat exchanger which cools the refrigerant by using chilled water; a circulation line which moves the refrigerant between the evaporator and at least one of the cooling tower and the heat exchanger; and a piping which connects the circulation line and the evaporator, and is extendable and contractible in response to movement of the evaporator. | 08-04-2011 |
20120057051 | IMAGING APPARATUS, IMAGING METHOD AND COMPUTER-READABLE RECORDING MEDIUM - An imaging apparatus includes an imaging unit that captures a subject to generate image data of the subject; a display unit that displays the image; an image separating unit that separates a subject image and a background image from the image displayed; a special effect input unit that receives information related to special effects respectively applied to the subject image and the background image; a special effect image generating unit that generates a special effect image of each of the subject and background images by applying special effects corresponding to information received by the special effect input unit; a storing unit that stores special effect information for assigning an advisability corresponding to a combination of special effects which the special effect image generating unit applies to the subject image and the background image; and a synthetic image generating unit that generates a synthetic image using the generated special effect image. | 03-08-2012 |
20130164041 | DEVELOPER STORAGE CONTAINER, IMAGE FORMING UNIT AND IMAGE FORMING APPARATUS - A developer storage container includes a storage portion for storing a developer therein, an opening for ejecting the developer stored in the storage portion, and an opening-and-closing member for opening and closing the opening. A concave portion is formed on the opening-and-closing member so that the concave portion faces the opening. | 06-27-2013 |
Patent application number | Description | Published |
20080231986 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device according to an example of the present invention includes a first head and a second head each having a conductive region formed of a conductive material, a recording medium having a data area from which data is read by the first head, and a servo burst area from which a servo burst signal is read by the second head, a driver for positioning the first head and the recording medium based on the servo burst signal, and a resistance element for covering a surface of the conductive region of the second head. | 09-25-2008 |
20080239587 | Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory - A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer. | 10-02-2008 |
20120074511 | MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region. | 03-29-2012 |
20120115250 | CONCAVE-CONVEX PATTERN FORMING METHOD AND MAGNETIC TUNNEL JUNCTION ELEMENT FORMING METHOD - A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask. | 05-10-2012 |
20120196084 | NANO-IMPRINT MOLD AND SUBSTRATE WITH UNEVEN PATTERNS MANUFACTURED BY USING THE MOLD - According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle. | 08-02-2012 |
20120241827 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer. | 09-27-2012 |
20120241881 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 09-27-2012 |
20120244639 | METHOD OF MANUFACTURING MAGNETIC MEMORY - According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning. | 09-27-2012 |
20120244640 | METHOD OF MANUFACTURING MULTILAYER FILM - According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer. | 09-27-2012 |
20130004724 | MASTER FOR PRODUCING STAMPER - In one embodiment, there is provided a master for producing a stamper. The master includes: a substrate made of a first material and comprising a first surface, wherein the first surface of the substrate is formed with a groove; a first layer made of a second material and formed in the groove, wherein the second material is different from the first material, and wherein a surface of the first layer is substantially flush with the first surface of substrate; and a projection portion formed on at least one of the first surface of the substrate and the surface of the first layer. The first material is silicon and the second material is selected from silicon oxide, aluminum oxide, titanium oxide, and glass. | 01-03-2013 |
20130028011 | MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY - A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices. | 01-31-2013 |
20130069182 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD - According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron. | 03-21-2013 |
20130248355 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT - According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less. | 09-26-2013 |
20130249028 | MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME - A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer. | 09-26-2013 |
20140087483 | MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT - According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more. | 03-27-2014 |
20140159177 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 06-12-2014 |
20140206106 | MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region. | 07-24-2014 |
20150014756 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer. | 01-15-2015 |
20150076635 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 03-19-2015 |
Patent application number | Description | Published |
20110244688 | METHOD OF PRODUCING MASK - According to one embodiment, a method of producing a mask includes: a step of forming a pattern on a substrate; a step of forming a first film that covers the top surface and side surface of the pattern and contains a first material; a step of forming a second film containing a second material on the first film; a step of performing anisotropic etching of the first and second films in a way that forms a sidewall layer including the first and second films on the side surface of the pattern and removes the first and second films on any location other than the sidewall layer; a step of performing isotropic etching of the first film of the sidewall layer; and a step of removing the pattern. | 10-06-2011 |
20120068281 | MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction. | 03-22-2012 |
20120236633 | MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer. | 09-20-2012 |
20120243308 | MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer. | 09-27-2012 |
20130029431 | METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE - According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer. | 01-31-2013 |
20130069185 | MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction. | 03-21-2013 |
20130070522 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer. | 03-21-2013 |
20130070523 | MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. | 03-21-2013 |
20130249024 | MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable. | 09-26-2013 |
Patent application number | Description | Published |
20110271695 | COOLING METHOD AND COOLING SYSTEM FOR ELECTRONIC DEVICE - A cooling method for an electronic device, comprising:
| 11-10-2011 |
20110308262 | REFRIGERANT CIRCULATION APPARATUS - A refrigerant circulation apparatus includes: an evaporator which evaporates a refrigerant; a blowing device which blows air to the evaporator; a condenser configured to condense the refrigerant evaporated by the evaporator; a blower failure detecting device which detects failure of the blowing device; a heat medium flow rate control valve which controls a flow rate of a heat medium supplied to the condenser, the heat medium for cooling the refrigerant; a condenser refrigerant liquid temperature sensor which detects a temperature of the refrigerant which is supplied to the evaporator from the condenser; and condenser side refrigerant temperature control device which lowers a setting temperature of a condenser side externally inputted temperature and controls the heat medium flow rate control valve so that a measured value of the condenser refrigerant liquid temperature sensor becomes equal to the lowered setting temperature, when receiving a failure signal from the blower failure detecting device. | 12-22-2011 |
20110314853 | COOLING SYSTEM - A cooling system comprising an intake air temperature sensor which measures an intake air temperature to an evaporator by a blower; a return air temperature sensor which measures a return air temperature which is cooled in the evaporator; and a blower frequency switching device which switches a frequency of the blower, wherein the blower frequency switching device controls the frequency of the blower to a frequency of the blower corresponding to a difference between an intake air temperature which is measured by an intake air temperature sensor and a return air temperature which is measured by a return air temperature sensor. | 12-29-2011 |
20130091880 | COOLING SYSTEM AND COOLING METHOD - Cooling system and cooling method that enable preventing breakdown of coolant pump is provided. The cooling system, includes: evaporator for evaporating coolant by heat exchange with indoor air as an object of air conditioning; condenser for cooling and condensing coolant evaporated by evaporator; coolant liquid storage section that communicates with condenser and stores coolant liquid flowing in from condenser; coolant pump that communicates with coolant liquid storage section and pressure-transmits coolant liquid toward evaporator, the coolant liquid flowing in from coolant liquid storage section; coolant liquid detection units for individually detecting whether or not liquid level of coolant liquid stored in coolant liquid storage section is higher than or equal to respective plural heights including first height and second height higher than first height in coolant liquid storage section; and control unit that changes motor rotation speed of coolant pump, corresponding to detection result input from coolant liquid detection units. | 04-18-2013 |
20130091881 | COOLING SYSTEM AND METHOD FOR CONTROLLING COOLING SYSTEM - A cooling system includes an evaporator for evaporating a refrigerant to cool an object to be cooled; a refrigerant-supply-flow-rate regulator for regulating a flow rate of the refrigerant to be supplied to the evaporator; a condenser for condensing the refrigerant by cooling the refrigerant by use of a chilled fluid; and a chilled-fluid-flow-rate regulator for regulating a flow rate of the chilled fluid to be supplied to the condenser, the refrigerant condensed by the condenser being to be pressurized to be supplied to the evaporator. The chilled-fluid-flow-rate regulator regulates a flow rate of the fluid, to be supplied to the evaporator, for a temperature of the refrigerant condensed to come to a predetermined target refrigerant-liquid temperature, and the refrigerant-supply-flow-rate regulator regulates a flow rate of the refrigerant, to be supplied to the evaporator, for a temperature of the object cooled to come to a predetermined target cooling temperature. | 04-18-2013 |
20140000300 | COOLING SYSTEM AND COOLING METHOD | 01-02-2014 |
Patent application number | Description | Published |
20120187351 | COLORANT MULTIMER, COLORED CURABLE COMPOSITION, COLOR FILTER AND METHOD FOR PRODUCING THE SAME, AND SOLID-STATE IMAGE SENSOR, IMAGE DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND ORGANIC EL DISPLAY WITH THE COLOR FILTER - A colorant multimer includes, as a partial structure of a colorant moiety, a dipyrromethene metal complex compound or tautomer thereof obtained from:
| 07-26-2012 |
20140308605 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided a pattern forming method comprising (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin substantially free from a fluorine atom and a silicon atom and different from the resin (A), (ii) a step of exposing the film, and (iii) a step of performing development by using an organic solvent-containing developer to form a negative pattern. | 10-16-2014 |
20140349225 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided a pattern forming method, including: (a) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin capable of increasing polarity by an action of an acid to decrease solubility in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin, which contains substantially no fluorine atom and silicon atom and is other than the resin (A), (b) exposing the film; and (c) performing development using the organic solvent-containing developer to form a negative type pattern, wherein a receding contact angle of water on the film formed by (a) is 70° or more. | 11-27-2014 |
20150079508 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided a pattern forming method comprising (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition; (ii) a step of exposing the film; and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF | 03-19-2015 |