Patent application number | Description | Published |
20090134486 | PHOTODIODE, METHOD FOR MANUFACTURING SUCH PHOTODIODE, OPTICAL COMMUNICATION DEVICE AND OPTICAL INTERCONNECTION MODULE - Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer ( | 05-28-2009 |
20090176327 | PHOTODIODE AND METHOD FOR FABRICATING SAME - A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light. | 07-09-2009 |
20100200941 | PHOTODIODE, OPTICAL COMMUNICATION DEVICE, AND OPTICAL INTERCONNECTION MODULE - Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode. | 08-12-2010 |
20100308428 | SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND OPTICAL COMMUNICATION DEVICE - A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer. | 12-09-2010 |
20100316325 | OPTICAL PHASE MODULATION ELEMENT AND OPTICAL MODULATOR USING THE SAME - Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied. | 12-16-2010 |
20100320496 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate. | 12-23-2010 |
20100327385 | SEMICONDUCTOR LIGHT-RECEIVING ELEMENT - The Si waveguide | 12-30-2010 |
20110002582 | SEMICONDUCTOR OPTICAL INTERCONNECTION DEVICE AND SEMICONDUCTOR OPTICAL INTERCONNECTION METHOD - Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip | 01-06-2011 |
20110012221 | SiGe PHOTODIODE - The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith. | 01-20-2011 |
20110110628 | SEMICONDUCTOR LIGHT-RECEIVING ELEMENT, OPTICAL COMMUNICATION DEVICE, OPTICAL INTERCONNECT MODULE, AND PHOTOELECTRIC CONVERSION METHOD - Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer | 05-12-2011 |
20110176762 | OPTICAL MODULATOR AND OPTICAL MODULATOR FABRICATION METHOD - An optical modulator is formed with at least a portion of a semiconductor layer ( | 07-21-2011 |
20110311178 | OPTICAL MODULATION STRUCTURE AND OPTICAL MODULATOR - The components are a lower clad layer ( | 12-22-2011 |
20120134633 | CONNECTING CHANNEL - Provided is a connecting channel that has manufacturing tolerance, can suppress light loses, improves reliability of the connecting channel, and connects an optical device and an optical waveguide. The connecting channel includes first silicon layer ( | 05-31-2012 |
20130064491 | OPTICAL MODULATOR - To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer ( | 03-14-2013 |
20130113064 | PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE - The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide. | 05-09-2013 |
20150049978 | SILICON-BASED ELECTRO-OPTICAL DEVICE - In a region in which silicon semiconductor layers having first and second conductive types are stacked, a concavoconvex structure including a Si | 02-19-2015 |
20150084143 | WAVEGUIDE-COUPLED MSM-TYPE PHOTODIODE - A waveguide-coupled MSM-type photodiode of the present invention comprises a structure in which a semiconductor light-absorbing layer and an optical waveguide core layer are adjacent and optically coupled to each other, has formed metal-semiconductor-metal (MSM) junctions which are arranged at an interval on the semiconductor light-absorbing layer, and is characterized in that of the MSM electrodes arranged at the interval, a voltage is set so that a reverse bias is applied to those MSM electrodes that are arranged on a light incidence side. | 03-26-2015 |