Patent application number | Description | Published |
20090035516 | Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same - Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved. | 02-05-2009 |
20090096014 | NONVOLATILE MEMORY DEVICES THAT INCLUDE AN INSULATING FILM WITH NANOCRYSTALS EMBEDDED THEREIN AND METHODS OF MANUFACTURING THE SAME - A nonvolatile memory device includes a semiconductor substrate, a charge-trap structure disposed on the semiconductor substrate, which includes an insulating film and a plurality of carbon nanocrystals embedded in the insulating film, and a gate disposed on the charge-trap structure. The nonvolatile memory device may exhibit memory hysteresis characteristics with improved reliability. | 04-16-2009 |
20090233439 | Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same - A metal organic precursor represented by a formula of R | 09-17-2009 |
20100084277 | Composition for copper plating and associated methods - A composition for copper plating and associated methods, a method of forming a copper wiring including forming an insulation layer having a recessed portion on a substrate, and forming a copper layer on the insulation layer to fill the recessed portion by performing an electroplating process using a composition that includes an aqueous electrolyte solution containing a copper ion and at least one of a disulfide compound represented by Formula 1, a betaine compound represented by at least one of Formulae 3 and 4, and a triblock copolymer of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO) having a weight average molecular weight of about 2,500 to about 5,000 g/mol and an ethylene oxide content (EO %, w/w) of about 30% to about 60%. | 04-08-2010 |
20120193238 | Compositions For Plating Copper And Methods Of Forming A Copper Bump Using The Same - A composition for plating copper includes an electrolyte solution, an accelerator, a suppressor and a leveler. The electrolyte solution includes a soluble copper salt, sulfuric acid and hydrochloric acid. The accelerator includes about 20 to about 60 ppm of a disulfide compound. The suppressor includes about 40 to about 100 ppm of a polyethyleneoxide (PEO)-polypropyleneoxide (PPO)-polyethyleneoxide (PEO) triblock copolymer. The PEO-PPO-PEO triblock copolymer has a weight average molecular weight of about 300 to about 10,000. The leveler includes about 0.01 to about 100 ppm of arylated polyethyleneimine. | 08-02-2012 |
20120251724 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-04-2012 |
20140183728 | WAFER SUPPORTING STRUCTURE, INTERMEDIATE STRUCTURE OF A SEMICONDUCTOR PACKAGE INCLUDING THE WAFER SUPPORTING STRUCTURE - A wafer supporting structure includes a supporting substrate for supporting a wafer, a release layer for detaching the wafer from the supporting substrate, and an adhesive layer for attaching the wafer to the supporting substrate. | 07-03-2014 |
20140197038 | COPPER ELECTROPLATING SOLUTION AND COPPER ELECTROPLATING APPARATUS - An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution. | 07-17-2014 |
20140199820 | METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask. | 07-17-2014 |
20140242263 | ALUMINUM PRECURSOR, METHOD OF FORMING A THIN FILM AND METHOD OF FORMING A CAPACITOR USING THE SAME - An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3. | 08-28-2014 |
20140309456 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-16-2014 |
20140316164 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-23-2014 |
20150021513 | CMP SLURRY COMPOSITION FOR POLISHING AN ORGANIC LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME - A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer. | 01-22-2015 |
20150024574 | TEMPORARY BONDING ADHESIVE COMPOSITIONS AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane. | 01-22-2015 |
Patent application number | Description | Published |
20120091407 | Photosensitive Resin Composition and Light Blocking Layer Using the Same - Disclosed are a photosensitive resin composition that includes (A) a cardo-based resin including repeating units represented by the following Chemical Formulae 1 and 2, (B) reactive unsaturated compound, (C) a pigment, (D) an initiator, and (E) a solvent, and a light blocking layer using the photosensitive resin composition. | 04-19-2012 |
20120161088 | Photosensitive Resin Composition and Color Filter Using the Same - Disclosed is a photosensitive resin composition including (A) a photopolymerizable monomer including a compound represented by the following Chemical Formula 1, wherein the substituents of Chemical Formula 1 are the same as defined in the specification, (B) a binder resin, (C) a photopolymerization initiator, (D) a pigment and (E) a solvent, and a color filter using the same. | 06-28-2012 |
20130164683 | Photosensitive Resin Composition for Color Filter and Color Filter Using the Same - Disclosed are a photosensitive resin composition for a color filter that includes (A) a binder resin including phenol-based resin represented by the following Chemical Formula 1; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a colorant; and (E) a solvent, and a color filter using the same. | 06-27-2013 |