Jun Soo
Jun Soo Chang, Icheon-Shi KR
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20090256209 | Gate Structure of Semiconductor Device - A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film. | 10-15-2009 |
Jun Soo Chang, Icheon-Si KR
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20080242045 | METHOD FOR FABRICATING TRENCH DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE - A method for fabricating a trench dielectric layer in a semiconductor device is provided. A trench is formed in a semiconductor substrate and a liner nitride layer is then formed on an inner wall of the trench. A liner oxide layer formed on the liner nitride layer is nitrified in order to protect the liner nitride layer from being exposed. Subsequently, the trench is filled with one or more dielectric layers. | 10-02-2008 |
Jun Soo Kim, Anyang-Si KR
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20130264630 | SEMICONDUCTOR DEVICES HAVING TRANSISTORS CAPABLE OF ADJUSTING THRESHOLD VOLTAGE THROUGH BODY BIAS EFFECT - Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described. | 10-10-2013 |
20140264568 | SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME - In a method of manufacturing a semiconductor device, a trench is formed by removing an upper portion of a substrate. A gate insulation layer pattern is formed on an inner wall of the trench. A gate electrode is formed on the gate insulation layer pattern. The gate electrode fills a lower portion of the trench. A capping layer is formed on the gate electrode and the gate insulation layer pattern. The capping layer is partially oxidized to form a first capping layer pattern and a second capping layer pattern. The first capping layer pattern is not oxidized, and the second capping layer pattern is oxidized. A third capping layer pattern is formed on the second capping layer pattern, the third capping layer pattern filling an upper portion of the trench. | 09-18-2014 |
Jun Soo Kim, Seoul KR
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20080255346 | Ratiometric fluorescent chemosensor for selective detection of Hg (II) ions - A mercury selective fluorescent chemosensor for detecting mercury ions (Hg | 10-16-2008 |
20120077275 | NOVEL 8-HYDROXYQUINOLINE ACETAMIDE COMPOUND, 8-HYDROXY QUINOLINE THIOAMIDE COMPOUND AND USE THEREOF - Disclosed are a novel 8-hydroxyquinoline acetamide compound, an 8-hydroxyquinoline thioamide and use thereof. More specifically, disclosed are a novel 8-hydroxyquinoline thioamide compound suitable for use as a selective chemodosimeter that shows considerably high detection sensitivity to mercury ions, an 8-hydroxyquinoline acetamide compound as an intermediate thereof, preparation thereof, and a chemodosimeter for mercury ion-selective detection, the chemodosimeter comprising the 8-hydroxyquinoline thioamide compound. The compounds as disclosed herein exhibit considerably effective fluorescence specificity of an off-on type, detect a micromole of mercury ions from chemical and biological aqueous systems, and allow 100% desulfurization within 5 minutes, thus being considerably useful in the chemical industry. | 03-29-2012 |
Jun Soo Kwon, Jongno-Gu KR
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20100151459 | MARKER FOR DETECTING THE PROPOSED EFFICACY OF TREATMENT - The invention relates to a method of identifying a marker responsive to aripiprazole treatment comprising the steps of: | 06-17-2010 |
Jun Soo Lee, Icheon-Si KR
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20150045480 | Starch-Based Hot Melt Adhesive - An exemplary embodiment of the present invention provides starch-based hot melt adhesive comprised of a composition including starch, a thermoplastic polymer, a tackifier, a plasticizer, and an adhesion promoter. The hot melt adhesive according to the exemplary embodiment of the present invention contains about 25 to 55 weight % of the starch which is infinitely renewable biomass, and, thus, it is less harmful and more eco-friendly and has a reduced manufacturing costs and is less sensitive to exhaustion of petroleum-based resources, as compared with the conventional hot melt adhesive mainly containing a petroleum-based material. Further, the hot melt adhesive according to the exemplary embodiment of the present invention imparts excellent adhesion strength and workability at the time of adhesion between different kinds of adherends such as a hydrophobic adherend and a hydrophilic adherend and can be applied to various fields such as packaging, bookbinding, construction, woodworking, and textile fields. | 02-12-2015 |
Jun Soo Lee, Gyeonggi-Do KR
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20100150378 | METHOD AND APPARATUS FOR AUDIO SIGNAL CONTROL - An audio signal control method and apparatus for hearing protection are disclosed. The audio signal control method includes: producing an output level of an audio signal being input; determining whether the ratio of an output time of the audio signal within a preset time duration to a permissible time corresponding to the produced output level is greater than or equal to a limit reference value; and limiting, when the ratio of the output time to the permissible time is greater than or equal to the limit reference value, the output level of the audio signal to a preset level. | 06-17-2010 |
20130329911 | APPARATUS AND METHOD FOR ADJUSTING VOLUME IN TERMINAL - A method terminal includes an apparatus for automatically adjusting volume in the terminal. An automatic volume adjuster extracts a representative volume from individual frame information of an audio file, and adjusts a master volume by a deviation between the extracted representative volume and a reference volume, and a controller plays the audio file with the master volume adjusted by the automatic volume adjuster. | 12-12-2013 |
Jun Soo Park, Seoul KR
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20130299223 | PRINTED CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a printed circuit board and a method for manufacturing the same. The method for manufacturing the printed circuit board includes forming a base circuit board including a cavity circuit pattern in a cavity region on upper and lower portions of a substrate and internal circuit layers outside the cavity region, forming a cavity separation layer on the cavity circuit pattern, forming at least one pair of an insulating layer and a circuit layer on the base circuit board, cutting the insulating layer and the cavity separation layer provided on an etch stop pattern by controlling a focal length of a laser beam such that the laser beam reaches a surface of the base circuit board, and removing the insulating layer by separating the cavity separation layer to form the cavity. The cavity separation layer is formed on the cavity circuit pattern, and the resultant structure is cut to the cavity separation layer by using a laser so that the insulating layer is separated. Accordingly, the insulating layer in the cavity is easily removed. | 11-14-2013 |