Patent application number | Description | Published |
20080283845 | Silicon carbide semiconductor device having high channel mobility and method for manufacturing the same - A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×10 | 11-20-2008 |
20110092063 | Method of manufacturing silicon carbide semiconductor device - In a method of manufacturing a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and having first and second opposing surfaces is prepared. The second surface of the semiconductor substrate is processed so that a surface roughness of the second surface is less than or equal to 10 nm and a value of (100%-reflectance-transmittance) at a wavelength of a laser light is greater than or equal to 80%. A metal layer is formed on the second surface of the semiconductor substrate after the processing the second surface. The metal layer is irradiated with the laser light and thereby an ohmic electrode is formed on the second surface. | 04-21-2011 |
20110306188 | MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared, an amorphous layer is formed on a portion of the semiconductor substrate where an electrode is to be formed, a metal layer is formed on the amorphous layer, and the electrode including the metal layer and a silicide layer is formed by irradiating the metal layer with a laser light in such a manner that a part of the metal layer reacts with the amorphous layer and forms the silicide layer. | 12-15-2011 |
20130102127 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam. | 04-25-2013 |
20130285070 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light. | 10-31-2013 |
20140299886 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semiconductor substrate is terminated with an element, which has a Pauling electronegativity larger than silicon and a binding energy with silicon larger than a binding energy of Si—H. | 10-09-2014 |
20150079781 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light. | 03-19-2015 |
Patent application number | Description | Published |
20100092210 | IMAGE FORMING APPARATUS - An image forming apparatus includes: an apparatus body that includes an image forming unit forming an image; a switching mechanism that switches a state of members between a contacting state and a non-contacting state, the members related to image formation by the image forming unit in the apparatus body; a covering unit that is supported in the apparatus body so as to be freely opened and closed, and that covers a part of the apparatus body when being closed; and a connection unit that is provided to the covering unit, that is not connected to the switching mechanism when the covering unit is opened while being connected to the switching member when the covering unit is closed, and that causes the switching mechanism to operate in conjunction with an operation by an operator any one of to open and to close the covering unit. | 04-15-2010 |
20110064455 | HOUSING DEVICE AND IMAGE-FORMING APPARATUS - A housing device includes: a housing that has an opening and defines a containment space for containing an object inserted through the opening; a guide member that has a longitudinal direction aligned with a direction of insertion of the object with respect to the housing and guides the object when the object is inserted into the containment space; a support structure that supports the guide member to be moveable with respect to the housing in the longitudinal direction; and a cover that opens and closes the opening, wherein when the cover closes the opening, the cover supports the object such that the object is spaced apart from the guide member. | 03-17-2011 |
20110064458 | Image-Forming Apparatus - An image-forming apparatus includes: a housing; a first cover attached to the housing; a belt-shaped intermediate transfer body; a rotating member; a support member that contacts an inner surface of the intermediate transfer body at a position opposed to the rotating member to form an image transfer portion where an image is transferred from the intermediate transfer body onto a recording medium; a first supporting unit provided to the housing to support a first end of the support member, a positioning mechanism that determines a position of the first cover relative to the housing when the first cover is closed; and a second supporting unit provided to the first cover to support a second end of the support member, such that a pressure generated between the support member and the rotating member is increased when the first cover is closed than when the first cover is opened. | 03-17-2011 |