Juhyung
Juhyung Kim, Yongin-Si KR
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20120033503 | CHARGE TRAP FLASH MEMORY DEVICE AND AN ERASING METHOD THEREOF - An erase method of a charge trap flash memory device, the method including receiving a temperature detection result, and performing an erase operation based on the temperature detection result, wherein the erase operation includes an erase execution interval, an erase verify interval and a delay time between the erase execution interval and the erase verify interval, wherein the erase operation changes a level of a word line voltage applied to word lines during the erase execution interval, a length of the delay time, or a level of the word line voltage applied to the word lines during the delay time. | 02-09-2012 |
20150084114 | NON-VOLATILE MEMORY DEVICES INCLUDING BLOCKING INSULATION PATTERNS WITH SUB-LAYERS HAVING DIFFERENT ENERGY BAND GAPS - A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed. | 03-26-2015 |
Juhyung Kim, Gyeonggi-Do KR
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20140035026 | SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor memory device and a method of fabricating the same. The device includes a plurality of gates vertically stacked on a top surface of a substrate with an epitaxial layer formed in the substrate, a vertical channel vertically penetrating the gates to be electrically connected to the epitaxial layer, and a memory layer provided between the vertical channel and the gates. The epitaxial layer has a top surface positioned at a level between a bottom surface of the lowermost one of the gates and the top surface of the substrate. | 02-06-2014 |
20140048868 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - A three-dimensional (3D) semiconductor memory device may include an electrode structure extending in a first direction and including insulating patterns and horizontal electrodes stacked on a substrate, a semiconductor pillar penetrating the electrode structure and connected to the substrate, a charge storage layer between the semiconductor pillar and the electrode structure, a tunnel insulating layer between the charge storage layer and the semiconductor pillar, and a blocking insulating layer between the charge storage layer and the electrode structure. A first horizontal electrode of the horizontal electrodes includes a gate electrode and a metal stopper between the gate electrode and the blocking insulating layer. | 02-20-2014 |
Juhyung Lee, Gyeonggi-Do KR
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20140324009 | Aperture-Patterned Fibrous Nonwoven Web - An apertured fibrous nonwoven web with an array of apertures is made that allows for increased functionality and improved aesthetic appearance. The material is particularly well-suited for use as a topsheet or bodyside liner material for personal care absorbent articles including, but not limited to feminine hygiene products, diapers, diaper pants, training pants, adult incontinence devices, bandages and the like. The fibrous nonwoven web includes first, second and third arrays of apertures with varying characteristics that provide improved fluid handling properties for various body exudates. | 10-30-2014 |
Juhyung Son, Uiwang-Si KR
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20160094323 | INTERCELL INTERFERENCE CONTROL THROUGH CONTROL SIGNAL PROVIDED BY TERMINAL - The present disclosure relates to a wireless communication system, and more particularly to a method for transmitting a reference signal in a wireless communication system. A new structure allows coexistence of a control channel and a data cannel in one time-frequency resource, thereby increasing efficiency of resources. The data and control channels coexist using a time division scheme. The coexistent control channels reallocate regions of the control signal and reference signal to maintain reliability of the control signal. Also proposed are an auxiliary control signal for measuring or controlling inter-cell interference and a method for thereby controlling interference of a base station/terminal. A new control channel structure is designed for transmitting the auxiliary control signal, whereby enabling coexistence with the legacy terminal. This provides a method for transmission/reception of relevant information between the base station and terminals to prevent erroneous operation of the legacy terminal. | 03-31-2016 |
20160095077 | NEW TDD FRAME STRUCTURE FOR UPLINK CENTRALIZED TRANSMISSION - The present disclosure relates to a wireless communication system, and more particularly to a method for transmitting synchronization channel and cell search signal in wireless communication system. Synchronization channel and cell search signal allow a terminal in a multi-layer cell supporting multiple carriers to effectively search and distinguish cells at different frequencies. To minimize terminal power consumption, new cell search signal transmission method proposes that base station connected at a frequency be used for transmitting information by other base stations at different frequencies, thereby allowing the terminal to readily recognizing neighbor cells and to determine about performing additional cell search. For the multi-layer cell to clearly distinguish cell identifications including inter-frequency measurement information, a cell ID pair between macro/small cells is proposed, achieving enhanced small cell efficiency. An uplink centralized transmission frame supports a multi-layer cell based on TDD, proposing a method for configuring synchronization signal in corresponding frame. | 03-31-2016 |
20160105871 | ADDITIONAL CONFIGURATION OF SMALL CELL NETWORK DATA RESOURCE USING COMMON REFERENCE SIGNAL - The present disclosure relates to a wireless communication system. The present disclosure relates to a wireless communication system supporting at least one of SC-FDMA, MC-FDMA and OFDMA, and more particularly, to a method for transmitting a reference signal in a wireless communication system. The present disclosure proposes a method for selecting, from common reference signals, a reference signal in a downlink data region and assigning the selected reference signal to a scheduling channel of the downlink data for data transfer, further proposes a method for selecting some common reference signals and diverting them to demodulation reference signals, and thereby promotes a reduction of the system overhead and an increase of data transmission capacity. Moreover, the present disclosure proposes preventing malfunction of the legacy terminals with a method for transmitting and receiving related information between terminals and base stations. | 04-14-2016 |
Juhyung Song, Seoul KR
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20160050635 | METHOD AND DEVICE FOR TRANSMITTING D2D DISCOVERY SIGNAL BY TERMINAL IN WIRELESS COMMUNICATION SYSTEM - A method for determining a device-to-device (D2D) symbol having orthogonality maintained (hereinafter, a position of the D2D symbol having orthogonality maintained) between single carrier-frequency division multiple access (SC-FDMA) sub-carriers among physical uplink control channel (PUCCH)/D2D signals, a method for determining the power of the symbol having orthogonality maintained, and a method for transmitting additional information in accordance with selective power control is provided. | 02-18-2016 |