Jr-Jung
Jr-Jung Iang, Changhua City TW
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20120223018 | METHOD AND SYSTEM FOR RECYCLING AND TREATING DYEING WASTEWATER - A method and system for recycling and treating dyeing wastewater are provided. To begin with, the dyeing wastewater is added with an adsorbent for assisted decolorization and filtration. Then, the wastewater is filtered with a first filtration device having hydrophilic membranes. The liquid having passed through the hydrophilic membranes undergoes an RO membrane-base filtration process to produce recycled water and concentrated wastewater. The concentrated wastewater is delivered into a second filtration device having hydrophobic membranes, before a micro-bubbling process is performed on the concentrated wastewater in the second filtration device to turn the concentrated wastewater into a creamy-white nebulized working liquid of high gas content. The steam in the working liquid can readily pass through the hydrophobic membranes to produce an effluent that meets effluent standards. | 09-06-2012 |
20120312747 | METHOD AND APPARATUS FOR RECYCLING AND TREATING WASTES OF SILICON WAFER CUTTING AND POLISHING PROCESSES - A method is provided for recycling and treating the wastes of silicon wafer cutting and polishing processes. To begin with, a dewatered filter cake is mixed with water so that the filter cake is diluted to form a working fluid. The water reacts with silicon in the filter cake to produce silicon dioxide and hydrogen. After the hydrogen is extracted for storage, specific gravity separation takes place via water so that silicon carbide and silicon particles are separated for sorting. Then, solid-liquid separation is performed on the remaining working fluid to separate silicon dioxide (solid) from water and PEG (liquid), before PEG is separated from water. Thus, the useful silicon particles, silicon carbide, silicon dioxide, and PEG are recycled from the filter cake to reduce the total amount of wastes. Moreover, as the side product, hydrogen, is of high commercial value, the method also adds value to recycling. | 12-13-2012 |
Jr-Jung Lin, Hsin-Chu TW
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20140252486 | Fin Shape For Fin Field-Effect Transistors And Method Of Forming - A fin field-effect transistor (finFET) and a method of forming are provided. A gate electrode is formed over one or more fins. Notches are formed in the ends of the gate electrode along a base of the gate electrode. Optionally, an underlying dielectric layer, such as a shallow trench isolation, may be recessed under the notch, thereby reducing gap fill issues. | 09-11-2014 |
20140349473 | Dummy Gate Electrode of Semiconductor Device - The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9. | 11-27-2014 |
20150137195 | Gate Protection Caps and Method of Forming the Same - A structure includes a substrate, a gate structure over the substrate, a dielectric layer over the substrate, and a cap over a gate electrode of the gate structure. Top surfaces of the dielectric layer and gate electrode are co-planar. The gate structure extends a gate lateral distance between first and second gate structure sidewalls. The cap extends between first and second cap sidewalls. A first cap portion extends from a midline of the gate structure laterally towards the first gate structure sidewall and to the first cap sidewall a first cap lateral distance, and a second cap portion extends from the midline laterally towards the second gate structure sidewall and to the second cap sidewall a second cap lateral distance. The first cap lateral distance and the second cap lateral distance are at least half of the gate lateral distance. | 05-21-2015 |
Jr-Jung Lin, Hsinchu TW
Patent application number | Description | Published |
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20150206952 | METHOD OF FORMING FINFET - A method of forming a FinFET is provided. A gate oxide layer and a dummy poly layer are substantially simultaneously etched using an etchant having a higher selectivity on the gate oxide layer than on the dummy poly layer. The gate oxide layer and the dummy poly layer are intersected with the gate oxide layer over a fin layer of the FinFET. | 07-23-2015 |