Patent application number | Description | Published |
20080197354 | THIN FILM TRANSISTOR, AN ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME, AND A MANUFACTURING METHOD THEREOF - A thin film transistor includes first and second ohmic contacts formed on a substrate, wherein each of the first and second ohmic contacts includes polycrystalline silicon; a semiconductor formed on the first and second ohmic contacts and the substrate, the semiconductor including microcrystalline silicon; a blocking member formed on the semiconductor; an input electrode formed on the first ohmic contact; an output electrode formed on the second ohmic contact; an insulating layer formed on the blocking member, the input electrode, and the output electrode; and a control electrode formed on the insulating layer and disposed on the semiconductor. | 08-21-2008 |
20080246033 | THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DEVICE INCLUDING THIN FILM TRANSISTOR, AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes. | 10-09-2008 |
20080265765 | Organic electroluminescence device and method for fabricating thereof - There are provided an organic EL device and a method of fabricating the same. An effective display area on which an anode electrode, an organic luminescence layer and a cathode electrode are formed is sealed by means of a metal can, a glass cap or an organic/inorganic material. A power source is applied to the anode and the cathode electrodes through a power transferring part extended from the effective display area to a non-effective display area. Accordingly, it is possible to reduce the oxidation of the cathode electrode of the organic EL device, thereby preventing the electrical contact characteristics of the cathode electrode from being deteriorated. | 10-30-2008 |
20080273072 | APPARATUS FOR FORMING A THIN FILM USING AN INKJET PRINTING METHOD - In an apparatus of forming a thin film, the apparatus has a printing chamber that forms a thin film on a substrate. The apparatus has at least two drying chambers that receive the substrate on which the thin film is formed and dry the thin film on the substrate. The two drying chambers may be independently controlled. Accordingly, the apparatus may reduce process time for forming the thin film without contamination of the substrate. | 11-06-2008 |
20090009094 | ACTIVE MATRIX TYPE ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are an active matrix type organic electroluminescent display device and a manufacturing method thereof. At least two capacitors having different functions from each other are disposed in a vertically stacked structure within a unit pixel region. When a compensation circuit needing two or more capacitors having different functions from each other per pixel is applied, the two or more capacitors are vertically stacked, thereby preventing the aperture ratio from being lowered due to the increase in the number of capacitors within the pixel. | 01-08-2009 |
20090072730 | ORGANIC ELECTRO-LUMINESCENT DISPLAY DEVICE - A display device comprises a first electrode formed on a substrate, a plurality of second electrodes formed on the substrate below the first electrode, an organic luminescent layer formed between the first electrode and the plurality of second electrodes, and a color filter layer formed on the substrate, wherein the color filter layer includes a red filter, a green filter, a blue filter and a white filter. | 03-19-2009 |
20090075440 | DISPLAY AND MANUFACTURING METHOD THEREOF - A display includes a substrate, a control electrode formed on the substrate, input and output electrodes formed on the substrate having facing sides facing each other with respect to the control electrode, a semiconductor layer contacting the input and the output electrodes, and an insulating layer formed between the control electrode and the semiconductor layer. At least one of the facing sides of the input and output electrodes on the semiconductor layer has a plurality of protrusions. The channel between the input and output electrodes is formed with various shapes, the length of the channel is prevented from being extending by a skew phenomenon, and the width of the channel may be extended. | 03-19-2009 |
20090121982 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials. | 05-14-2009 |
20090140647 | DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - In a display device and a method of manufacturing the display device, the display device has a substrate having a first region and a second region disposed at a peripheral portion of the first region. The substrate includes a plurality of first electrodes disposed on the first region and an insulation member selectively disposed in the first region. The insulating member has a plurality of openings that expose a portion corresponding to the first electrodes. The substrate includes light emitting patterns are disposed on the first electrodes through the openings and the substrate has a second electrode disposed on the light emitting patterns. Accordingly, the thickness of the light emitting patterns is uniformity so that the quality of an image generated from the light emitting patterns is improved. | 06-04-2009 |
20090152557 | ELECTRO-LUMINESCENCE DEVICE INCLUDING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ELECTRO-LUMINESCENCE DEVICE - An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern. | 06-18-2009 |
20090159887 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode. | 06-25-2009 |
20090206421 | ORGANIC LIGHT EMITTING DISPLAY AND MANUFACTURING METHOD THEREOF - Disclosed are an organic light emitting display and a manufacturing method thereof. The organic light emitting display includes an organic light emitting section that generates a light, a first thin film transistor that drives the organic light emitting section and includes a first polysilicon layer and a first gate electrode formed below the first polysilicon layer, and a second thin film transistor connected to the first thin film transistor and includes a second polysilicon layer and a second gate electrode formed above the second polysilicon layer. The first and second polysilicon layers are formed on the same layer. | 08-20-2009 |
20090256151 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate comprises a substrate; a source electrode arranged on the substrate; a drain electrode arranged on the substrate and spaced from the source electrode; a semiconductor layer arranged on the source electrode and the drain electrode; an insulating layer arranged on the semiconductor layer; and a gate electrode arranged on the insulating layer, wherein the semiconductor layer comprises: a first ohmic contact region that overlays an upper surface and a side surface of the source electrode; a second ohmic contact region that overlays an upper surface and a side surface of the drain electrode; and a channel region that is spaced from the source and drain electrodes and interconnects the first ohmic contact region and the second ohmic contact region. | 10-15-2009 |
20090267495 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides an organic light emitting device and a manufacturing method thereof. An organic light emitting device in accordance with an exemplary embodiment of the present invention includes: a thin film structure formed on a substrate; a first color filter formed on the thin film structure; a first insulating layer formed on the first color filter; a first transflective metal member formed on the first insulating layer and positioned on the first color filter; a second insulating layer formed on the first transflective metal member; a first transparent electrode formed on the second insulating layer and positioned on the first transflective metal member; a first pixel electrode formed on the first transparent electrode; a white organic light emitting member formed on the first pixel electrode; and a common electrode formed on the white organic light emitting member. | 10-29-2009 |
20090302319 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas. | 12-10-2009 |
20090302325 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern. | 12-10-2009 |
20100001284 | METHOD OF MANUFACTURING TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY USING THE SAME - A method of manufacturing a transistor and a method of manufacturing an organic electroluminescence display are disclosed. When an amorphous silicon layer is crystallized, a silicon oxide layer formed on a polysilicon layer is subsequently patterned. Impurity ions are implanted into first and second regions of the amorphous silicon layer to form first and second doped regions. The silicon oxide layer is patterned so that the silicon oxide layer may be removed from an ohmic contact region of the polysilicon layer, and covers only a channel region of the polysilicon layer. | 01-07-2010 |
20100090208 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant. | 04-15-2010 |
20100090222 | THIN FILM TRANSISTOR; METHOD OF MANUFACTURING SAME; AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor according to one or more embodiments of the present invention includes: an insulation substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a semiconductor formed on the gate insulating layer and having a pair of openings facing each other; ohmic contact layers formed in the openings and including a conductive impurity; and a source electrode and a drain electrode in contact with their respective ohmic contact layers. An organic light emitting device in accordance with an embodiment includes: a first signal line and a second signal line intersecting each other on an insulation substrate; a switching thin film transistor connected to the first signal line and the second signal line; a driving thin film transistor connected to the switching thin film transistor; and a light emitting diode (LED) connected to the driving thin film transistor. | 04-15-2010 |
20100096638 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same. | 04-22-2010 |
20100117531 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to an organic light emitting device and a manufacturing method thereof. An organic light emitting device includes a first substrate, a thin film structure disposed on the first substrate, a second substrate comprising an inner surface and an outer surface, a first sealing member disposed between the first substrate and the second substrate, the first sealing member comprising an inner surface and an outer surface, and a second sealing member disposed on the outer surface of the second substrate. | 05-13-2010 |
20100200859 | THIN FILM TRANSISTOR ARRAY PANEL FOR X-RAY DETECTOR - A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes ( | 08-12-2010 |
20100295051 | ELECTRO-LUMINESCENCE DEVICE INCLUDING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ELECTRO-LUMINESCENCE DEVICE - An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern. | 11-25-2010 |
20100301341 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention relates to an OLED display and a manufacturing method thereof, including a substrate, a control electrode formed on the substrate, a polysilicon semiconductor formed on the control electrode, a data line including an input electrode at least partially overlapping the polysilicon semiconductor and an output electrode facing the input electrode, an insulating layer covering the data line and the output electrode and having a contact hole, a gate line connected to the control electrode through the contact hole, and a pixel electrode connected to the output electrode. | 12-02-2010 |
20120217517 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials. | 08-30-2012 |
20120262433 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas. | 10-18-2012 |
20120267635 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant. | 10-25-2012 |