Patent application number | Description | Published |
20090074986 | METHOD OF PREVENTING ABNORMAL LARGE GRAINS FROM BEING INCLUDED INTO THIN NANO-CRYSTALLINE DIAMOND FILM - The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow. | 03-19-2009 |
20090127102 | PLASMA DEPOSITION APPARATUS AND METHOD - A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk. | 05-21-2009 |
20090324824 | METHOD FOR GROWING THIN FILM - Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture. | 12-31-2009 |
20100065892 | Bio-sensor and method of manufacturing the same - A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape. | 03-18-2010 |
20110223332 | METHOD FOR DEPOSITING CUBIC BORON NITRIDE THIN FILM - The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability. | 09-15-2011 |
20130104972 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20130202849 | POLYCRYSTALLINE DIAMOND FOR DRAWING DIES AND METHOD FOR FABRICATING THE SAME - Provided are polycrystalline diamond for drawing dies, which inhibits preferential wear along specific lattice planes while ensuring wear resistance by controlling the shape and orientation of the grains forming polycrystalline diamond solid, and a method for fabricating the same. The polycrystalline diamond for drawing dies includes a section of diamond having an isotropic granular structure or a radially oriented texture, or has a stacked structure including an isotropic granular layer and a radial texture layer alternately in multiple layers. | 08-08-2013 |
20130260157 | NANOCRYSTALLINE DIAMOND FILM AND METHOD FOR FABRICATING THE SAME - A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate. | 10-03-2013 |
20130266742 | CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME - The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable. | 10-10-2013 |
20130273395 | TWO-DIMENSIONAL NANOSTRUCTURED TUNGSTEN CARBIDE AND METHOD FOR FABRICATING THE SAME - 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber. | 10-17-2013 |
20130295387 | METHOD FOR SYNTHESIS OF CUBIC BORON NITRIDE AND CUBIC BORON NITRIDE STRUCTURE - A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N | 11-07-2013 |
20130302592 | METHOD FOR GROWTH OF CARBON NANOFLAKES AND CARBON NANOFLAKE STRUCTURE - A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH | 11-14-2013 |
20130327387 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer ( | 12-12-2013 |
20140004032 | METHOD AND APPARATUS FOR RAPID GROWTH OF DIAMOND FILM | 01-02-2014 |
20140255286 | METHOD FOR MANUFACTURING CUBIC BORON NITRIDE THIN FILM WITH REDUCED COMPRESSIVE RESIDUAL STRESS AND CUBIC BORON NITRIDE THIN FILM MANUFACTURED USING THE SAME - A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage. | 09-11-2014 |
20140326319 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’). | 11-06-2014 |