Patent application number | Description | Published |
20090242966 | Vertical-type semiconductor devices - In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. | 10-01-2009 |
20090302377 | VERTICAL-TYPE SEMICONDUCTOR DEVICE - In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes. | 12-10-2009 |
20090321816 | Vertical-type non-volatile memory device - In a vertical-type non-volatile memory device, first and second single-crystalline semiconductor pillars are arranged to face each other on a substrate. Each of the first and second single-crystalline semiconductor pillars has a rectangular parallelepiped shape with first, second, third and fourth sidewalls. A first tunnel oxide layer, a first charge storage layer and a first blocking dielectric layer are sequentially stacked on the entire surface of the first sidewall of the first single-crystalline semiconductor pillar. A second tunnel oxide layer, a second charge storage layer and a second blocking dielectric layer are sequentially stacked on the entire surface of the first sidewall of the second single-crystalline semiconductor pillar. A word line makes contact with surfaces of both the first and second blocking dielectric layers. The word line is used in common for the first and second single-crystalline semiconductor pillars. | 12-31-2009 |
20100025757 | Conductive structure and vertical-type pillar transistor - In a conductive structure, method of forming the conductive structure, a vertical-type pillar transistor and a method of manufacturing the vertical-type pillar transistor, the conductive structure includes a pillar provided on a substrate. A first conductive layer pattern is provided on a sidewall of the pillar, at least a portion of the first conductive layer pattern facing the sidewall of the pillar. A second conductive layer pattern is provided on a surface of the first conductive layer pattern, the second conductive layer pattern facing the sidewall of the pillar. A hard mask pattern covers upper surfaces of the first conductive layer pattern and the pillar. The conductive structure includes an electric conductor with a relatively low resistance. The conductive structure may be used as an electrode of a memory device. | 02-04-2010 |
20100109079 | Vertical type semiconductor device - A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns. | 05-06-2010 |
20100123182 | VERTICAL TYPE SEMICONDUCTOR DEVICE - A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first impurity region. The single crystalline semiconductor pattern may be on the first impurity region. The single crystalline semiconductor pattern has a pillar shape substantially perpendicular to the substrate. A second impurity region may be formed in an upper portion of the single crystalline semiconductor pattern. The gate insulation layer structure may include a charge storage pattern, the gate insulation layer structure on a sidewall of the single crystalline semiconductor pattern. The gate electrode may be formed on the gate insulation layer structure and opposite the sidewall of the single crystalline semiconductor pattern. The gate electrode has an upper face substantially lower than that of the single crystalline semiconductor pattern. | 05-20-2010 |
20100123947 | FLAT PANEL DISPLAY AND MANUFACTURING METHOD THEREOF - A flat panel display includes a first substrate, a thin film transistor formed on the first substrate, a second substrate facing the first substrate, and a light controller formed on the second substrate, wherein the light controller is electrically connected to the thin film transistor, wherein the light controller includes an opening plate having a plurality of first openings and a light blocker moving horizontally with respect to the opening plate to selectively pass light through the first openings. | 05-20-2010 |
20100140685 | Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 06-10-2010 |
20100187962 | LIGHT-EMITTING UNIT, METHOD OF MANUFACTURING THE SAME, AND A LIGHT SOURCE DEVICE HAVING THE LIGHT-EMITTING UNIT - A light-emitting unit for emitting light includes a light-emitting element and a light-converting layer. The light-converting layer includes a nanoparticle and an additive having an oxidation speed faster than an oxidation speed of the nanoparticle. The light-converting layer is disposed on the light-emitting element to increase the durability of the light-emitting unit. | 07-29-2010 |
20100213521 | Semiconductor devices and methods of forming semiconductor devices - A semiconductor device includes a back bias dielectric including a negative fixed charge, a gate electrode overlapping the back bias dielectric, a semiconductor layer disposed between the gate electrode and the back bias dielectric, and a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the negative fixed charge accumulates holes at a surface of the semiconductor layer facing the back bias dielectric. | 08-26-2010 |
20100213524 | Semiconductor memory device and method of manufacturing the same - A semiconductor memory device includes a plurality of active pillars protruding from a semiconductor substrate, a first gate electrode disposed on at least one sidewall of the active pillar, a first gate insulating layer being disposed between the active pillar and the first gate electrode, a second gate electrode disposed on at least one sidewall of the active pillar over the first gate electrode, a second gate insulating layer being disposed between the active pillar and the second gate electrode, first and second body regions in the active pillar adjacent to respective first and second respective electrodes, and first through third source/drain regions in the active pillar arranged alternately with the first and second body regions. | 08-26-2010 |
20110205816 | Vertical type semiconductor device, method of manufacturing a vertical type semiconductor device and method of operating a vertical semiconductor device - A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first impurity region. The single crystalline semiconductor pattern may be on the first impurity region. The single crystalline semiconductor pattern has a pillar shape substantially perpendicular to the substrate. A second impurity region may be formed in an upper portion of the single crystalline semiconductor pattern. The gate insulation layer structure may include a charge storage pattern, the gate insulation layer structure on a sidewall of the single crystalline semiconductor pattern. The gate electrode may be formed on the gate insulation layer structure and opposite the sidewall of the single crystalline semiconductor pattern. The gate electrode has an upper face substantially lower than that of the single crystalline semiconductor pattern. | 08-25-2011 |
20110211399 | METHOD OF MANUFACTURING A VERTICAL-TYPE SEMICONDUCTOR DEVICE AND METHOD OF OPERATING A VERTICAL-TYPE SEMICONDUCTOR DEVICE - In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes. | 09-01-2011 |
20110227007 | METHOD OF MANUFACTURING QUANTUM DOT - A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot. | 09-22-2011 |
20110227034 | QUANTUM DOT-BLOCK COPOLYMER HYBRID, METHODS OF FABRICATING AND DISPERSING THE SAME, LIGHT EMITTING DEVICE INCLUDING THE SAME, AND FABRICATION METHOD THEREOF - Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot. | 09-22-2011 |
20120009747 | Methods of Manufacturing Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 01-12-2012 |
20120028428 | Vertical type semiconductor device and method of manufacturing a vertical type semiconductor device - A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns. | 02-02-2012 |
20120028450 | VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. | 02-02-2012 |
20120088343 | METHOD OF MANUFACTURING VERTICAL SEMICONDUCTOR DEVICE - A vertical semiconductor device, a DRAM device, and associated methods, the vertical semiconductor device including single crystalline active bodies vertically disposed on an upper surface of a single crystalline substrate, each of the single crystalline active bodies having a first active portion on the substrate and a second active portion on the first active portion, and the first active portion having a first width smaller than a second width of the second active portion, a gate insulating layer on a sidewall of the first active portion and the upper surface of the substrate, a gate electrode on the gate insulating layer, the gate electrode having a linear shape surrounding the active bodies, a first impurity region in the upper surface of the substrate under the active bodies, and a second impurity region in the second active portion. | 04-12-2012 |
20130065381 | VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. | 03-14-2013 |
20130134501 | METHOD OF MANUFACTURING A VERTICAL-TYPE SEMICONDUCTOR DEVICE AND METHOD OF OPERATING A VERTICAL-TYPE SEMICONDUCTOR DEVICE - In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes. | 05-30-2013 |
20130242228 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A wide viewing angle liquid crystal display includes color filters having a quantum dot and scattering particles and liquid crystal layer disposed in a microcavity, a distance between the color filter and the liquid crystal layer being sized to minimize display deterioration due to parallax. | 09-19-2013 |
20130335799 | PHOTOLUMINESCENCE DISPLAY DEVICE - A display device includes a light source unit that emits a first light with a first wavelength, an optical filter that converts the first light to a second light, and an optical shutter that transmits or reflects the first light or the second light. | 12-19-2013 |
20140080273 | VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. | 03-20-2014 |
20140183582 | LIGHT EMITTING DIODE PACKAGE AND DISPLAY APPARATUS INCLUDING THE SAME - A light emitting diode package includes a light emitting diode, an insulating layer, a plurality of light emitting particles, and a plurality of metal particles. The light emitting diode is configured to emit first light of a first wavelength in a visible light range. The insulating layer is disposed on the light emitting diode. The plurality of light emitting particles is dispersed in the insulating layer and is configured to receive the first light to generate a second light of a second wavelength different from the first wavelength. The plurality of metal particles is dispersed in the insulating layer, and is configured to receive at least one light component of the first light and the second light to cause, at least in part, surface plasmon resonance, the surface plasmon resonance being configured to yield a resonance wave comprising a peak wavelength in the range of the second wavelength. | 07-03-2014 |
20140192291 | Liquid Crystal Display Device Including Light Sources Emitting Different Colors - A display device includes a display panel having a first transparent subpixel, a second transparent subpixel and a third transparent subpixel. A light source part provides light to the display panel. The light source part including a first light source configured to generate red light, a second light source configured to generate green light and a third light source configured to generate blue light. The third light source includes a blue light emitting diode and a wavelength shift layer. The wavelength of the blue light emitted from the third light source has a first peak within a range of about 445 nm to about 450 nm and a second peak within a range of about 450 nm to about 540 nm. | 07-10-2014 |
20140268633 | DISPLAY APPARATUS - A display apparatus includes a display panel including a plurality of pixels, and a backlight unit disposed at a rear surface of the display panel and supplying a light to the display panel, where the backlight unit includes a first light source which provides a first color light to the display panel, a second light source which provides a second color light to the display panel, and a third light sources which provides a third color light to the display panel, spectral bands of the first, second and third color light are different from each other, and the first color light and the second color light have substantially the same color as each other. | 09-18-2014 |
20140268634 | DISPLAY APPARATUS - A display apparatus is provided. The display apparatus includes a first light source unit comprising a first light source that emits light having a first spectral band and a photo-converter that converts the light having the first spectral band to a first color light. A spectral band of the first color light is different from the first spectral band of the light emitted from the first light source. The display apparatus also includes a second light source unit comprising a second light source that emits light having a second spectral band. The light having the second spectral band corresponds to a second color light, and has a same color as the light having the first spectral band. A spectral band of the second color light is different from the spectral band of the first color light. | 09-18-2014 |
20150085522 | BACKLIGHT ASSEMBLY, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A backlight assembly includes a first light source part including a plurality of first light sources configured to generate light having a first color and a plurality of second light sources configured to generate light having a second color different from the first color, and a light guiding plate including a first incident surface and an exiting surface adjacent to the first incident surface. The exiting surface is configured to allow the light to pass therethrough. The exiting surface includes a first peripheral portion configured to absorb the light having the second color and a central portion adjacent to the first peripheral portion and configured to allow the light to pass therethrough. The first and second light sources are alternately located. | 03-26-2015 |