Patent application number | Description | Published |
20090309206 | SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING THE SAME - A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes a first package that a first semiconductor chip is mounted on a front side of a first substrate and a redistributed pad including a first redistributed pad electrically connected to the first substrate and a second redistributed pad electrically connected to the first redistributed pad is disposed on the first semiconductor chip and a second package that a second semiconductor chip is mounted on a front side of a second substrate, the second package including a connection member electrically connected to the second redistributed pad. The connection member electrically connected to the redistributed pad electrically connects the first and second packages to each other. | 12-17-2009 |
20100230811 | SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE BUMP - In one embodiment, a semiconductor device includes a semiconductor substrate and a bonding pad disposed thereon. The semiconductor device also includes a passivation layer, a buffer layer, and an insulating layer sequentially stacked on the semiconductor substrate. According to one aspect, a first recess is defined within the passivation layer, the buffer layer, and the insulating layer to expose at least a region of the bonding pad and a second recess is defined within the insulating layer to expose at least a region of the buffer layer and spaced apart from the first recess such that a portion of the insulating layer is interposed therebetween. Further, the semiconductor device includes a conductive solder bump disposed within the first and second recesses. The conductive solder bump may be connected to the bonding pad in the first recess and supported by the buffer layer through a protrusion of the conductive solder bump extending into the second recess. | 09-16-2010 |
20110079897 | INTEGRATED CIRCUIT CHIP AND FLIP CHIP PACKAGE HAVING THE INTEGRATED CIRCUIT CHIP - In an integrated circuit (IC) chip and a flip chip package having the same, no wiring line is provided and the first electrode pad does not make contact with the wiring line in a pad area of the IC chip. Thus, the first bump structure makes contact with the first electrode regardless of the wiring line in the pad area. The second electrode pad makes contact with the wiring line in a pseudo pad area of the IC chip. Thus, the second bump structure in the pseudo pad area makes contact with an upper surface of the second electrode at a contact point(s) spaced apart from the wiring line under the second electrode. | 04-07-2011 |
20110193181 | SEMICONDUCTOR DEVICE HAVING DIFFERENT METAL GATE STRUCTURES - A semiconductor includes a channel region in a semiconductor substrate, a gate dielectric film on the channel region, and a gate on the gate dielectric film. The gate includes a doped metal nitride film, formed from a nitride of a first metal and doped with a second metal which is different from the first metal, and a conductive polysilicon layer formed on the doped metal nitride film. The gate may further include a metal containing capping layer interposed between the doped metal nitride film and the conductive polysilicon layer. | 08-11-2011 |
20110193228 | MOLDED UNDERFILL FLIP CHIP PACKAGE PREVENTING WARPAGE AND VOID - A molded underfill flip chip package may include a printed circuit board, a semiconductor chip mounted on the printed circuit board, and a sealant. The printed circuit board has at least one resin passage hole passing through the printed circuit board and at least one resin channel on a bottom surface of the printed circuit board, the at least one resin channel extending from the at least one resin passage hole passing through the printed circuit board. The sealant seals a top surface of the printed circuit board, the semiconductor chip, the at least one resin passage hole, and the at least one resin channel. | 08-11-2011 |
20110244634 | SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING THE SAME - A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes a first package that a first semiconductor chip is mounted on a front side of a first substrate and a redistributed pad including a first redistributed pad electrically connected to the first substrate and a second redistributed pad electrically connected to the first redistributed pad is disposed on the first semiconductor chip and a second package that a second semiconductor chip is mounted on a front side of a second substrate, the second package including a connection member electrically connected to the second redistributed pad. The connection member electrically connected to the redistributed pad electrically connects the first and second packages to each other. | 10-06-2011 |
20130009286 | SEMICONDUCTOR CHIP AND FLIP-CHIP PACKAGE COMPRISING THE SAME - A semiconductor chip includes stress-relief to mitigate the effects of differences in coefficients of thermal expansion (CTE) between a printed circuit board (PCB) and a semiconductor chip and a flip-chip package including the semiconductor chip. The semiconductor chip includes a stress-relief buffer coupling a bump and a semiconductor chip pad. | 01-10-2013 |
20130150197 | POWER STRUCTURE OF HYBRID SYSTEM - Provided is a power structure of a hybrid system. In particular, the power structure of a hybrid system includes a planetary gear part including a sun gear, a carrier, and a ring gear, a first motor connected with the sun gear, a second motor connected with the ring gear, an engine and a brake connected with the carrier to drive a hybrid car by two motors at the time of EV traveling, thereby improving traveling performance and increase an EV region without increasing the motor size, thereby improving fuel efficiency. | 06-13-2013 |
20130256847 | SEMICONDUCTOR DEVICES INCLUDING ELECTROMAGNETIC INTERFERENCE SHIELD - Provided are a semiconductor device including an EMI shield, a method of manufacturing the same, a semiconductor module including the semiconductor device, and an electronic system including the semiconductor device. The semiconductor device includes a lower semiconductor package, an upper semiconductor package, a package bump, and an EMI shield. The lower semiconductor package includes a lower substrate, a lower semiconductor chip mounted on the lower substrate, and a ground wire separated from the lower semiconductor chip. The upper semiconductor package includes an upper substrate stacked on the lower semiconductor package, and an upper semiconductor chip stacked on the upper substrate. The package bump electrically connects the upper semiconductor package and the lower semiconductor package. The EMI shield covers the upper and lower semiconductor packages and is electrically connected to the ground wire. | 10-03-2013 |
20130256917 | SEMICONDUCTOR PACKAGES - A semiconductor package includes a master chip and a slave chip stacked on a substrate. The master chip and the slave chip are connected to one another by a bonding wire. The master chip and the slave chip are connected in series with an external circuit. The semiconductor package may have a low loading factor and excellent performance, and may be mass produced at low costs. | 10-03-2013 |
20140167177 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a channel layer over an active region, first and second field regions adjacent the active region, and a gate structure over the channel layer and portions of the first and second field regions. The first and second field regions include grooves adjacent respective sidewalls of the channel layer, and bottom surfaces of the grooves are below a bottom surface of the channel layer. | 06-19-2014 |
20140363960 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Provided are methods for fabricating a semiconductor device. A gate dielectric layer is formed on a substrate including first through third regions. A first functional layer is formed on only the first region of the first through third regions. A second functional layer is formed on only the first and second regions of the first through third regions. A threshold voltage adjustment layer is formed on the first through third regions. The threshold voltage adjustment layer includes a work function adjustment material. The work function adjustment material is diffused into the gate dielectric layer by performing a heat treatment process with respect to the substrate. | 12-11-2014 |
20150037937 | SEMICONDUCTOR DEVICES INCLUDING ELECTROMAGNETIC INTERFERENCE SHIELD - Provided are a semiconductor device including an EMI shield, a method of manufacturing the same, a semiconductor module including the semiconductor device, and an electronic system including the semiconductor device. The semiconductor device includes a lower semiconductor package, an upper semiconductor package, a package bump, and an EMI shield. The lower semiconductor package includes a lower substrate, a lower semiconductor chip mounted on the lower substrate, and a ground wire separated from the lower semiconductor chip. The upper semiconductor package includes an upper substrate stacked on the lower semiconductor package, and an upper semiconductor chip stacked on the upper substrate. The package bump electrically connects the upper semiconductor package and the lower semiconductor package. The EMI shield covers the upper and lower semiconductor packages and is electrically connected to the ground wire. | 02-05-2015 |
20150041913 | SEMICONDUCTOR DEVICE HAVING TRI-GATE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate including an NMOS region, a fin active region protruding from the substrate in the NMOS region, the fin active region including an upper surface and a sidewall, a gate dielectric layer on the upper surface and the sidewall of the fin active region, a first metal gate electrode on the gate dielectric layer, the first metal gate electrode having a first thickness at the upper surface of the fin active region and a second thickness at the sidewall of the fin active region, and a second metal gate electrode on the first metal gate electrode, the second metal gate electrode having a third thickness at the upper surface of the fin active region and a fourth thickness at the sidewall of the fin active region, wherein the third thickness is less than the fourth thickness. | 02-12-2015 |