Patent application number | Description | Published |
20080277647 | Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon - A semiconductor structure including a single quantum well Ge | 11-13-2008 |
20090324475 | Superhard dielectric compounds and methods of preparation - Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H | 12-31-2009 |
20120020864 | Hydride Compounds with Silicon and Germanium Core Atoms and method of Synthesizing Same - A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H | 01-26-2012 |
20140087544 | TIN PRECURSORS FOR VAPOR DEPOSITION AND DEPOSITION PROCESSES - Sn-containing precursors for deposition of Sn-containing films and methods of using are provided herein. In some embodiments, Sn-containing precursors are methylated and/or hydrogenated and/or deuteriated. In some embodiments, methods of chemical vapor deposition are provided. | 03-27-2014 |
20150014816 | DOPED SEMICONDUCTOR FILMS AND PROCESSING - A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration. | 01-15-2015 |
20150048485 | METHODS OF FORMING FILMS INCLUDING GERMANIUM TIN AND STRUCTURES AND DEVICES INCLUDING THE FILMS - Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein. | 02-19-2015 |
20150270122 | PLASMA PRE-CLEAN MODULE AND PROCESS - A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber. | 09-24-2015 |
20160051964 | METHOD AND SYSTEM FOR IN SITU FORMATION OF GAS-PHASE COMPOUNDS - A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature. | 02-25-2016 |