Patent application number | Description | Published |
20080293196 | Method for fabricating multi-resistive state memory devices - A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays. | 11-27-2008 |
20090045390 | Multi-resistive state memory device with conductive oxide electrodes - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 02-19-2009 |
20100157657 | Multi-resistive state memory device with conductive oxide electrodes - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 06-24-2010 |
20110186803 | Multi-resistive state memory device with conductive oxide electrodes - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 08-04-2011 |
20120033481 | Memory Element With A Reactive Metal Layer - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 02-09-2012 |
20120064691 | Method For Fabricating Multi Resistive State Memory Devices - A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays. | 03-15-2012 |
20140211542 | Memory Element With a Reactive Metal Layer - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 07-31-2014 |
20140293676 | PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODS - A memory element programmable between different impedance states can include a first electrode; a switching layer formed in contact with the first electrode and including at least one metal oxide; and a buffer layer in contact with the switching layer. A buffer layer can include a first metal, tellurium, a third element, and a second metal distributed within the buffer layer. A second electrode can be in contact with the buffer layer. | 10-02-2014 |