Patent application number | Description | Published |
20080315357 | INTEGRATED CIRCUIT AND METHOD INCLUDING STRUCTURING A MATERIAL - A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-dimensional bodies is transferred into the material. The structured material connects at least two of the three-dimensional bodies. | 12-25-2008 |
20090176368 | MANUFACTURING METHOD FOR AN INTEGRATED CIRCUIT STRUCTURE COMPRISING A SELECTIVELY DEPOSITED OXIDE LAYER - The present invention provides a manufacturing method for an integrated circuit structure comprising a selectively deposited oxide layer. An integrated circuit structure including a first and second region is provided, the first region being a metal region and the second region being a non-metal region. Then an oxide layer is selectively depositing on the first and second regions. The oxide layer forms a first thickness on the first region and a second thickness on the second region, the first thickness being larger than the second thickness. | 07-09-2009 |
20090321805 | INSULATOR MATERIAL OVER BURIED CONDUCTIVE LINE - One embodiment relates to an integrated circuit that includes a conductive line that is arranged in a groove in a semiconductor body. An insulating material is disposed over the conductive line. This insulating material includes a first insulating layer comprising a horizontal portion, and a second insulating layer that is disposed over the first insulating layer. Other methods, devices, and systems are also disclosed. | 12-31-2009 |
20110090616 | INTEGRATED CIRCUIT AND METHOD INCLUDING STRUCTURING A MATERIAL - A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-dimensional bodies is transferred into the material. The structured material connects at least two of the three-dimensional bodies. | 04-21-2011 |
20140042549 | METHODS OF FORMING STRESS-INDUCING LAYERS ON SEMICONDUCTOR DEVICES - An illustrative device disclosed herein includes an NFET transistor, a PFET transistor, a tensile stress-inducing layer formed above the NFET transistor, a compressive stress-inducing layer formed above the PFET transistor and a stress relaxation material positioned at least in an opening defined between the tensile stress-inducing layer and the compressive stress-inducing layer. | 02-13-2014 |
20140113455 | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A WET ETCH PROCESS FOR REMOVING SILICON NITRIDE - A method disclosed herein includes providing a semiconductor structure comprising a transistor, the transistor comprising a gate electrode and a silicon nitride sidewall spacer formed at the gate electrode. A wet etch process is performed. The wet etch process removes at least a portion of the silicon nitride sidewall spacer. The wet etch process comprises applying an etchant comprising at least one of hydrofluoric acid and phosphoric acid. | 04-24-2014 |
20140232433 | CIRCUIT ELEMENT INCLUDING A LAYER OF A STRESS-CREATING MATERIAL PROVIDING A VARIABLE STRESS AND METHOD FOR THE FORMATION THEREOF - A transistor includes a source region, a drain region, a channel region, a gate electrode and a layer of a stress-creating material. The stress-creating material provides a stress that is variable in response to a signal acting on the stress-creating material. The layer of stress-creating material is arranged to provide a stress in at least the channel region. The stress provided in at least the channel region is variable in response to the signal acting on the stress-creating material. Layers of stress-creating material providing a stress that is variable in response to a signal acting on the stress-creating material may also be used in circuit elements other than transistors, for example, resistors. | 08-21-2014 |
20150024578 | METHODS FOR ETCHING DIELECTRIC MATERIALS IN THE FABRICATION OF INTEGRATED CIRCUITS - Methods for etching dielectric materials in the fabrication of integrated circuits are disclosed herein. In one exemplary embodiment, a method for fabricating an integrated circuit includes forming a layer of a first dielectric material over a gate electrode structure formed on a semiconductor substrate. The gate electrode structure includes a horizontal top surface and sidewall vertical surfaces adjacent to the horizontal top surface. The method further includes forming a layer of a second dielectric material over the layer of the first dielectric material. The first dielectric material is different than the second dielectric material. Still further, the method includes applying an etchant to the second material that fully removes the second material from the sidewall vertical surfaces while only partially removing the second material from the horizontal top surface and while substantially not removing any of the layer of the first dielectric material. | 01-22-2015 |