Patent application number | Description | Published |
20080203056 | METHODS FOR ETCHING HIGH ASPECT RATIO FEATURES - Methods for forming features for high aspect ratio application in etch process are provided in the present invention. In one embodiment, the method for etching a dielectric layer disposed on a substrate includes placing a substrate having a portion of a dielectric layer exposed through a patterned photoresist layer in an etch chamber, supplying a gas mixture containing argon (Ar) gas into the etch chamber, forming a plasma from the gas mixture using dual frequency RF power and etching the exposed dielectric layer using the plasma formed from the gas mixture. | 08-28-2008 |
20080230511 | HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST - In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O | 09-25-2008 |
20080286979 | Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species - A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step. | 11-20-2008 |
20090008033 | METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR - A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections. | 01-08-2009 |
20090142859 | PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING - Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal. | 06-04-2009 |
20110115589 | METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR - A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections. | 05-19-2011 |
20110162803 | CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION - Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween. | 07-07-2011 |
20120024479 | APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER - Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume. | 02-02-2012 |
20140034241 | TEMPERATURE ENHANCED ELECTROSTATIC CHUCKING IN PLASMA PROCESSING APPARATUS - Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process. | 02-06-2014 |