Patent application number | Description | Published |
20120025244 | LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR - Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO | 02-02-2012 |
20130146925 | LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR - A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light. | 06-13-2013 |
20130234192 | LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD - Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area. | 09-12-2013 |
20140117395 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip. | 05-01-2014 |
20140159089 | LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate. | 06-12-2014 |
20140299905 | LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY - A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses. | 10-09-2014 |
20150014702 | LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME - Disclosed are a light-emitting diode having improved light extraction efficiency and a method for manufacturing same. This light-emitting diode includes: a gallium nitride substrate having an upper surface and a lower surface; and a gallium nitride semiconductor multilayer structure disposed on the lower surface of the substrate, and having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Herein, the gallium nitride substrate has a main pattern having a protruding portion and a concave portion on the upper surface, and a rough surface formed on the protruding portion of the main pattern. The light-emitting diode is capable of improving light extraction efficiency through the upper surface thereof since the rough surface is formed along with the main pattern on the upper surface of the gallium nitride substrate. | 01-15-2015 |
20150144981 | LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR - A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light. | 05-28-2015 |